Stable and metastable Si negative-U centers in AlGaN and AlN

Hybrid functional calculations ofDXcenters in AlN and GaN

(2014) L. Gordon et al.   PHYSICAL REVIEW B

Negative-U behavior of the Si donor in Al0.77Ga0.23N

(2013) Xuan Thang Trinh et al.   APPLIED PHYSICS LETTERS

The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN

(2013) A. Kakanakova-Georgieva et al.   APPLIED PHYSICS LETTERS

Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate

(2013) Zachary Lochner et al.   APPLIED PHYSICS LETTERS

Highly conductive n-AlxGa1−xN layers with aluminum mole fractions above 80%

(2013) Frank Mehnke et al.   APPLIED PHYSICS LETTERS

Microscopic origin ofn-type behavior in Si-doped AlN

(2013) Daniel Fernández Hevia et al.   PHYSICAL REVIEW B

Concentration of point defects in wurtzite AlN: A hybrid functional study

(2012) Leonardo Silvestri et al.   EPL

Hybrid functional study of Si and O donors in wurtzite AlN

(2011) Leonardo Silvestri et al.   APPLIED PHYSICS LETTERS

High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures

(2011) A. Kakanakova-Georgieva et al.   JOURNAL OF CRYSTAL GROWTH

Identification of the deep level defects in AlN single crystals by electron paramagnetic resonance

(2010) V. A. Soltamov et al.   JOURNAL OF APPLIED PHYSICS

Observation of the Triplet Metastable State of Shallow Donor Pairs in AlN Crystals with a Negative-UBehavior: A High-Frequency EPR and ENDOR Study

(2008) Sergei B. Orlinskii et al.   PHYSICAL REVIEW LETTERS