Electrical and optical properties of Zr doped β-Ga2O3 single crystals

Sn and Si are the typical dopants for achieving tunable n-type conductivity of beta-Ga2O3 single crystals grown from the melt. Here, we explore Zr doping in beta-Ga2O3 as assessed with UV-vis-NIR, Hall Effect, I-V, and CV measurements and hybrid functional calculations. Single crystals were grown from the melt with nominal Zr doping between 0.1 and 0.5 at% using Czochralski and vertical gradient freeze methods in Ar + O-2. Our results suggest that Zr Ga behaves as a shallow donor, with a measured activation energy of similar to 10 meV. Our samples show an electron mobility similar to 73-112 cm(2) V-1 s(-1), resistivity similar to 0.08-0.01 ohm cm, and carrier density of n = 6.5 x 10(17) -5 x 10(18) cm(3) at room temperature. (C) 2019 The Japan Society of Applied Physics