A new approach to free-standing GaN using β-Ga2O3 as a substrate

MOCVD Growth of GaN on Sapphire Using a Ga2O3 Interlayer

(2011) Tsung-Yen Tsai et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Structural, electronic and energetic properties of GaN[0001]/Ga2O3[100] heterojunctions: A first-principles density functional theory study

(2011) Po-Liang Liu et al.   SCRIPTA MATERIALIA

Czochralski growth and characterization of β-Ga2O3 single crystals

(2010) Z. Galazka et al.   CRYSTAL RESEARCH AND TECHNOLOGY

Freestanding high quality GaN substrate by associated GaN nanorods self-separated hydride vapor-phase epitaxy

(2009) C. L. Chao et al.   APPLIED PHYSICS LETTERS

Pseudohalide vapour growth of thick GaN layers

(2009) K. Jacobs et al.   JOURNAL OF CRYSTAL GROWTH

Vapor-phase epitaxy of high-crystallinity GaN films using Ga2O vapor and NH3

(2009) Mamoru Imade et al.   JOURNAL OF CRYSTAL GROWTH