4.7 Article

MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature

Journal

APL MATERIALS
Volume 7, Issue 2, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.5058059

Keywords

-

Funding

  1. AFOSR [FA9550-18-1-0059, FA9550-18-1-0479]
  2. Agnitron Technologies through ONR program [N00014-16-P-2058]
  3. DTRA [HDTRA 11710034]
  4. AFOSR program [FA9550-17-P-0029]
  5. ONR program [N00014-16-P-2058]

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In this work, we report record electron mobility values in unintentionally doped beta-Ga2O3 films grown by metal-organic chemical vapor deposition. Using degenerately Sn-doped regrown n+beta-Ga2O3 contact layers, we were able to maintain Ohmic contact to the beta-Ga2O3 films down to 40 K, allowing for reliable temperature-dependent Hall measurement. An electron mobility of 176 cm(2)/V s and 3481 cm(2)/V s were measured at room temperature and 54 K, respectively. The room and low temperature mobilities are both among the highest reported values in a bulk beta-Ga2O3 film. A low net background charge concentration of 7.4 x 10(15) cm(-3) was confirmed by both temperature dependent Hall measurement and capacitance-voltage measurement. The feasibility of achieving low background impurity concentration and high electron mobility paves the road for the demonstration of high performance power electronics with high breakdown voltages and low on-resistances. (C) 2018 Author(s).

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