Journal
AIP ADVANCES
Volume 6, Issue 1, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4940763
Keywords
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Funding
- Partnership Project for Fundamental Technology Researches of Ministry of Education, Culture, Sports, Science and Technology, Japan
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We report a detailed investigation on temperature-dependent Raman scattering of beta-(AlGa)(2)O-3 thin films with different Al content (0-0.72) under the temperature range of 77-300 K. The temperature-dependent Raman shifts and linewidths of the phonon modes were obtained by employing Lorentz fitting. The linewidths broadening of phonon modes with the temperature can be well explained by a model involving the effects of thermal expansion, lattice-mismatch-induced strain, and decay of optical phonon into two and three phonons. It is clearly demonstrated dependence of the linewidths and decay process on the Al content in beta-(AlGa)(2)O-3 thin films, which can provide an experimental basis for realization of (AlGa)(2)O-3-based optoelectronic device applications. (C) 2016 Author(s).
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