Effects of hole localization on limiting p-type conductivity in oxide and nitride semiconductors

Impact of Group-II Acceptors on the Electrical and Optical Properties of GaN

(2013) John L. Lyons et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

On the origin of the 265 nm absorption band in AlN bulk crystals

(2012) Ramón Collazo et al.   APPLIED PHYSICS LETTERS

Stable interstitial dopant–vacancy complexes in ZnO

(2012) B. Puchala et al.   PHYSICAL REVIEW B

Role of self-trapping in luminescence andp-type conductivity of wide-band-gap oxides

(2012) J. B. Varley et al.   PHYSICAL REVIEW B

Shallow versus Deep Nature of Mg Acceptors in Nitride Semiconductors

(2012) John L. Lyons et al.   PHYSICAL REVIEW LETTERS

Nitrogen is a deep acceptor in ZnO

(2011) M. C. Tarun et al.   AIP Advances

Group-II acceptors in wurtzite AlN: A screened hybrid density functional study

(2010) Áron Szabó et al.   APPLIED PHYSICS LETTERS

Dual nature of acceptors in GaN and ZnO: The curious case of the shallow MgGa deep state

(2010) Stephan Lany et al.   APPLIED PHYSICS LETTERS

Carbon impurities and the yellow luminescence in GaN

(2010) J. L. Lyons et al.   APPLIED PHYSICS LETTERS

Generalized Koopmans density functional calculations reveal the deep acceptor state ofNOin ZnO

(2010) Stephan Lany et al.   PHYSICAL REVIEW B

Why nitrogen cannot lead to p-type conductivity in ZnO

(2009) J. L. Lyons et al.   APPLIED PHYSICS LETTERS

A hybrid density functional study of lithium in ZnO: Stability, ionization levels, and diffusion

(2009) A. Carvalho et al.   PHYSICAL REVIEW B

Fundamentals of zinc oxide as a semiconductor

(2009) Anderson Janotti et al.   REPORTS ON PROGRESS IN PHYSICS

Defect energetics in ZnO: A hybrid Hartree-Fock density functional study

(2008) Fumiyasu Oba et al.   PHYSICAL REVIEW B