Materials issues and devices of α- and β-Ga2O3

Chlorine-based inductive coupled plasma etching of α-Ga2O3

(2019) Zhe Jian et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Interfacial reactions of titanium/gold ohmic contacts with Sn-doped β-Ga2O3

(2019) Ming-Hsun Lee et al.   APL Materials

Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film

(2019) Fikadu Alema et al.   APL Materials

Demonstration of lateral field-effect transistors using Sn-doped β-(AlGa)2O3 (010)

(2019) Hironori Okumura et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Evaluation of Low-Temperature Saturation Velocity in $\beta$ -(AlxGa1–x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors

(2019) Yuewei Zhang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A field-plated Ga2O3 MOSFET with near 2-kV breakdown voltage and 520 mΩ · cm2 on-resistance

(2019) Ke Zeng et al.   Applied Physics Express

MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties

(2019) Zixuan Feng et al.   APPLIED PHYSICS LETTERS

Defects at the surface of β-Ga2O3 produced by Ar plasma exposure

(2019) A. Y. Polyakov et al.   APL Materials

Vertical Ga2O3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation

(2019) Chia-Hung Lin et al.   IEEE ELECTRON DEVICE LETTERS

Device-Level Thermal Management of Gallium Oxide Field-Effect Transistors

(2019) Bikramjit Chatterjee et al.   IEEE Transactions on Components Packaging and Manufacturing Technology

All-ion-implanted planar-gate current aperture vertical Ga2O3 MOSFETs with Mg-doped blocking layer

(2018) Man Hoi Wong et al.   Applied Physics Express

Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors

(2018) Yuewei Zhang et al.   APPLIED PHYSICS LETTERS

Radiation hardness of β-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation

(2018) Man Hoi Wong et al.   APPLIED PHYSICS LETTERS

Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures

(2018) Yuewei Zhang et al.   APPLIED PHYSICS LETTERS

HCl Flow-Induced Phase Change of α-, β-, and ε-Ga2O3 Films Grown by MOCVD

(2018) Haiding Sun et al.   CRYSTAL GROWTH & DESIGN

Recessed-Gate Enhancement-Mode $\beta $ -Ga2O3 MOSFETs

(2018) Kelson D. Chabak et al.   IEEE ELECTRON DEVICE LETTERS

Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV

(2018) Zongyang Hu et al.   IEEE ELECTRON DEVICE LETTERS

A power device material of corundum-structured α-Ga2O3 fabricated by MIST EPITAXY® technique

(2018) Kentaro Kaneko et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

A comparative study of wet etching and contacts on (2¯01) and (010) oriented β-Ga 2 O 3

(2018) Soohwan Jang et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Comparison of O 2 and H 2 O as oxygen source for homoepitaxial growth of β-Ga 2 O 3 layers by halide vapor phase epitaxy

(2018) Keita Konishi et al.   JOURNAL OF CRYSTAL GROWTH

Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW.cm-2 figure-of-merit

(2018) Jiancheng Yang et al.   AIP Advances

Acceptor doping of β-Ga2O3 by Mg and N ion implantations

(2018) Man Hoi Wong et al.   APPLIED PHYSICS LETTERS

Donors and deep acceptors in β-Ga2O3

(2018) Adam T. Neal et al.   APPLIED PHYSICS LETTERS

Effect of buffer iron doping on delta-doped β-Ga2O3 metal semiconductor field effect transistors

(2018) Chandan Joishi et al.   APPLIED PHYSICS LETTERS

Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors

(2018) Zongyang Hu et al.   APPLIED PHYSICS LETTERS

1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs

(2018) Ke Zeng et al.   IEEE ELECTRON DEVICE LETTERS

Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs

(2018) Manikant Singh et al.   IEEE ELECTRON DEVICE LETTERS

1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of

(2018) Wenshen Li et al.   APPLIED PHYSICS LETTERS

Epitaxial $\beta$ -Ga2O3 and $\beta$ -(AlxGa1−x)2O3/ $\beta$ -Ga2O3 Heterostructures Growth for Power Electronics

(2018) Ross Miller et al.   IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING

Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy

(2018) Y. Oshima et al.   APL Materials

MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature

(2018) Yuewei Zhang et al.   APL Materials

Halide vapor phase epitaxial growth of β-Ga2O3 and α-Ga2O3 films

(2018) J. H. Leach et al.   APL Materials

Current Aperture Vertical $\beta$ -Ga2O3 MOSFETs Fabricated by N- and Si-Ion Implantation Doping

(2018) Man Hoi Wong et al.   IEEE ELECTRON DEVICE LETTERS

Ge-Doped ${\beta }$ -Ga2O3 MOSFETs

(2017) Neil Moser et al.   IEEE ELECTRON DEVICE LETTERS

First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes

(2017) Kohei Sasaki et al.   IEEE ELECTRON DEVICE LETTERS

High Breakdown Voltage (−201) $\beta $ -Ga2O3 Schottky Rectifiers

(2017) Jiancheng Yang et al.   IEEE ELECTRON DEVICE LETTERS

$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation

(2017) Andrew Joseph Green et al.   IEEE ELECTRON DEVICE LETTERS

Inductively-coupled-plasma reactive ion etching of single-crystal β-Ga2O3

(2017) Liheng Zhang et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Ab initio velocity-field curves in monoclinic β-Ga2O3

(2017) Krishnendu Ghosh et al.   JOURNAL OF APPLIED PHYSICS

Fast growth rate of epitaxial β–Ga 2 O 3 by close coupled showerhead MOCVD

(2017) Fikadu Alema et al.   JOURNAL OF CRYSTAL GROWTH

Schottky barrier height of Ni toβ-(AlxGa1−x)2O3with different compositions grown by plasma-assisted molecular beam epitaxy

(2017) Elaheh Ahmadi et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Schottky barrier diodes of corundum-structured gallium oxide showing on-resistance of 0.1 mΩ·cm2grown by MIST EPITAXY®

(2016) Masaya Oda et al.   Applied Physics Express

Reduction in edge dislocation density in corundum-structured α-Ga2O3layers on sapphire substrates with quasi-graded α-(Al,Ga)2O3buffer layers

(2016) Riena Jinno et al.   Applied Physics Express

First-principles calculations of the near-edge optical properties of β-Ga2O3

(2016) Kelsey A. Mengle et al.   APPLIED PHYSICS LETTERS

Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage

(2016) Kelson D. Chabak et al.   APPLIED PHYSICS LETTERS

Intrinsic electron mobility limits inβ-Ga2O3

(2016) Nan Ma et al.   APPLIED PHYSICS LETTERS

Reaction kinetics and growth window for plasma-assisted molecular beam epitaxy of Ga2O3: Incorporation of Ga vs. Ga2O desorption

(2016) Patrick Vogt et al.   APPLIED PHYSICS LETTERS

Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V

(2016) Man Hoi Wong et al.   IEEE ELECTRON DEVICE LETTERS

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3MOSFETs

(2016) Andrew J. Green et al.   IEEE ELECTRON DEVICE LETTERS

Conductivity control of Sn-doped α-Ga2O3thin films grown on sapphire substrates

(2016) Kazuaki Akaiwa et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Electron channel mobility in silicon-doped Ga2O3MOSFETs with a resistive buffer layer

(2016) Man Hoi Wong et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

High-quality β-Ga2O3single crystals grown by edge-defined film-fed growth

(2016) Akito Kuramata et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Relationship between crystal defects and leakage current in β-Ga2O3Schottky barrier diodes

(2016) Makoto Kasu et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model

(2016) R. Schewski et al.   JOURNAL OF APPLIED PHYSICS

Growth of β-Ga 2 O 3 single crystals using vertical Bridgman method in ambient air

(2016) K. Hoshikawa et al.   JOURNAL OF CRYSTAL GROWTH

Growth characteristics of corundum-structured α-(Al x Ga 1−x ) 2 O 3 /Ga 2 O 3 heterostructures on sapphire substrates

(2016) Kentaro Kaneko et al.   JOURNAL OF CRYSTAL GROWTH

Investigation of Different Metals as Ohmic Contacts to β-Ga2O3: Comparison and Analysis of Electrical Behavior, Morphology, and Other Physical Properties

(2016) Yao Yao et al.   JOURNAL OF ELECTRONIC MATERIALS

Chlorine-based dry etching ofβ-Ga2O3

(2016) Jack E Hogan et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Recent progress in Ga2O3power devices

(2016) Masataka Higashiwaki et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Scaling-Up of Bulk β-Ga2O3Single Crystals by the Czochralski Method

(2016) Zbigniew Galazka et al.   ECS Journal of Solid State Science and Technology

Halide vapor phase epitaxy of twin-free α-Ga2O3on sapphire (0001) substrates

(2015) Yuichi Oshima et al.   Applied Physics Express

Room temperature ferromagnetism in conducting α-(In1−xFex)2O3 alloy films

(2015) K. Akaiwa et al.   APPLIED PHYSICS LETTERS

Mist-CVD Grown Sn-Doped $\alpha $ -Ga2O3 MESFETs

(2015) Giang T. Dang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Characterization of defects in β-Ga2O3 single crystals

(2015) Katsuhiko Nakai et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Quasi-heteroepitaxial growth of β-Ga 2 O 3 on off-angled sapphire (0 0 0 1) substrates by halide vapor phase epitaxy

(2015) Yuichi Oshima et al.   JOURNAL OF CRYSTAL GROWTH

β-(AlxGa1−x)2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma-assisted molecular beam epitaxy

(2015) Stephen W. Kaun et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates

(2015) Elaheh Ahmadi et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Homoepitaxial growth of β-Ga2O3layers by halide vapor phase epitaxy

(2014) Hisashi Murakami et al.   Applied Physics Express

On the bulk β-Ga2O3 single crystals grown by the Czochralski method

(2014) Zbigniew Galazka et al.   JOURNAL OF CRYSTAL GROWTH

Thermodynamic study of β-Ga2O3 growth by halide vapor phase epitaxy

(2014) Kazushiro Nomura et al.   JOURNAL OF CRYSTAL GROWTH

Epitaxial growth of corundum-structured wide band gap III-oxide semiconductor thin films

(2014) Shizuo Fujita et al.   JOURNAL OF CRYSTAL GROWTH

Carbon as a Shallow Donor in Transparent Conducting Oxides

(2014) J. L. Lyons et al.   Physical Review Applied

Si-Ion Implantation Doping in β-Ga2O3and Its Application to Fabrication of Low-Resistance Ohmic Contacts

(2013) Kohei Sasaki et al.   Applied Physics Express

Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

(2013) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

$\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates

(2013) Kohei Sasaki et al.   IEEE ELECTRON DEVICE LETTERS

Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE

(2013) D. Gogova et al.   JOURNAL OF CRYSTAL GROWTH

Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3thin films grown by pulsed laser deposition

(2013) Daniel Splith et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

(2012) Kohei Sasaki et al.   Applied Physics Express

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

(2012) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Electrical Conductive Corundum-Structured $\alpha$-Ga$_{2}$O$_{3}$ Thin Films on Sapphire with Tin-Doping Grown by Spray-Assisted Mist Chemical Vapor Deposition

(2012) Kazuaki Akaiwa et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Successful Growth of Conductive Highly Crystalline Sn-Doped $\alpha$-Ga$_{2}$O$_{3}$ Thin Films by Fine-Channel Mist Chemical Vapor Deposition

(2012) Toshiyuki Kawaharamura et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Dielectric and electric studies of the [N(CH3)4][N(C2H5)4]ZnCl4 compound at low temperature

(2012) K. Karoui et al.   MATERIALS CHEMISTRY AND PHYSICS

Oxygen vacancies and donor impurities in β-Ga2O3

(2010) J. B. Varley et al.   APPLIED PHYSICS LETTERS

Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping

(2008) Encarnación G. Víllora et al.   APPLIED PHYSICS LETTERS

Growth of β-Ga2O3Single Crystals by the Edge-Defined, Film Fed Growth Method

(2008) Hideo Aida et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Heteroepitaxy of Corundum-Structured α-Ga2O3Thin Films on α-Al2O3Substrates by Ultrasonic Mist Chemical Vapor Deposition

(2008) Daisuke Shinohara et al.   JAPANESE JOURNAL OF APPLIED PHYSICS