Article
Crystallography
Jani Jesenovec, Cassandra Remple, Jesse Huso, Benjamin Dutton, Parker Toews, Matthew D. McCluskey, John S. McCloy
Summary: Cu doping in β-Ga2O3 shows significant incorporation even with Cu evaporation, with measured high resistivities and segregation of Cu2O in part of the material. Excited crystals exhibit rapid photodarkening and decreased resistivity with sufficient Cu concentration.
JOURNAL OF CRYSTAL GROWTH
(2022)
Article
Materials Science, Multidisciplinary
Chen Wang, Shi-Wei Li, Yu-Chao Zhang, Wei-Hang Fan, Hai-Jun Lin, Dong-Sing Wuu, Shui-Yang Lien, Wen-Zhang Zhu
Summary: This study systematically investigated the effect of annealing temperature on the texture, optical characters, chemical valence state, and surface topography of amorphous gallium oxide films. The optimal annealing temperature was found to be 700 degrees C, resulting in good crystal quality and flat-continuous surface. However, temperature above 800 degrees C led to the appearance of cracks, possibly due to Al diffusion and thermal expansion coefficient mismatch.
Article
Engineering, Electrical & Electronic
Soyoon Kim, Jungbok Lee, Hyungsoo Ahn, Kyounghwa Kim, Min Yang
Summary: Ga2O3 thin films were hetero-epitaxially grown on 4H-SiC substrates using MOCVD. The crystal quality of the epsilon-Ga2O3 thin films grown on Si-face and C-face of 4H-SiC substrates was compared. Results showed that the epsilon-Ga2O3 film grown on a Si-face substrate exhibited better crystal quality compared to growth on a C-face. Annealing the epsilon-Ga2O3 thin film in an oxygen atmosphere transformed the crystal phase and significantly reduced the roughness.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Physics, Condensed Matter
Madiha Khan, Vaibhav Kadam, Tushar Sant, Suhas M. Jejurikar, Arun Banpurkar, Animesh Mandal, Shubhada Adhi
Summary: In this study, ZnO/Ga2O3 and Ga2O3/ZnO heterostructures were successfully fabricated on c-Al2O3 substrates using pulsed laser deposition. A hypothetical model explaining the growth process was proposed based on structural and surface morphological investigations. It was found that the template (Ga2O3/Al2O3 and ZnO/Al2O3) used to grow the final film had a significant impact on the microstructural, electrical, and optical properties of the heterostructure. The emission processes involved in UV-blue emission, especially for the Ga2O3/ZnO/Al2O3 heterostructure, were explained by a proposed band diagram schematic.
SOLID STATE COMMUNICATIONS
(2023)
Article
Crystallography
Yuichi Oshima, Shingo Yagyu, Takashi Shinohe
Summary: Etch pits were observed on a c-plane alpha-Ga2O3 epilayer using HCl gas etching, indicating a correlation between etch pit density and dislocation density. Gas-etching technique can effectively reveal dislocation distribution in a wide area, which is challenging to explore using traditional TEM.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Chemistry, Physical
Sunjae Kim, Heejoong Ryou, Jeonghyun Moon, In Gyu Lee, Wan Sik Hwang
Summary: In this study, Al and In dopants are codoped in B-Ga2O3 nanostructures via hydrothermal synthesis. It is found that the codoping of Al and In atoms can reduce the mechanical strain induced in the B-Ga2O3 nanostructures compared to single-dopant doping, leading to enhanced photocatalytic activity at higher dopant concentrations.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Materials Science, Multidisciplinary
Sofie Vogt, Clemens Petersen, Max Kneiss, Daniel Splith, Thorsten Schultz, Holger von Wenckstern, Norbert Koch, Marius Grundmann
Summary: This study presents the structural and electrical properties of undoped and doped alpha-Ga2O3 thin films grown on m-plane sapphire. An undoped alpha-Ga2O3 buffer layer was introduced to improve crystal quality and stabilize the alpha-phase at lower substrate temperatures. Donor doping with tin and germanium achieved high electron mobilities. Suitable annealing temperature for ohmic Ti/Al/Au layer stacks was identified, while high annealing temperatures deteriorated the electrical properties of the thin films, indicating the need for low temperature contacting procedures for alpha-Ga2O3-based devices.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2023)
Article
Crystallography
Edgars Butanovs, Martins Zubkins, Ramunas Nedzinskas, Veronika Zadin, Boris Polyakov
Summary: Gallium oxide (Ga2O3) has potential as a new ultra-wide bandgap semiconductor, but its widespread use is limited by the lack of native p-type conductivity. Spinel zinc gallate (ZnGa2O4) is a potential matching material. In this study, two novel approaches of preparing one-dimensional Ga2O3-ZnGa2O4 core-shell nanowires were demonstrated and compared: direct deposition of a ZnGa2O4 coating using reactive magnetron co-sputtering, and annealing of a sacrificial ZnO coating to enable solid state reaction between ZnO and Ga2O3. The as-grown nanostructures were characterized using various techniques. The sacrificial layer conversion method resulted in a smoother and more uniform ZnGa2O4 coating. These heterostructures could be used for photocatalysis and nanoscale ultra-wide bandgap electronics.
JOURNAL OF CRYSTAL GROWTH
(2023)
Article
Materials Science, Ceramics
Chen Wang, Shi-Wei Li, Wei-Hang Fan, Yu-Chao Zhang, Xiao-Ying Zhang, Rong-Rong Guo, Hai-Jun Lin, Shui-Yang Lien, Wen-Zhang Zhu
Summary: This study systematically investigated the evolution of Ga2O3 films deposited on Al2O3(0001) at different substrate temperatures using PLD. By standardizing the thickness of the films, the effect of substrate temperature on the film properties was explored, leading to the production of high-quality crystalline Ga2O3 films suitable for high-performance power electric devices and photoelectronic devices.
CERAMICS INTERNATIONAL
(2021)
Article
Crystallography
Kazutada Ikenaga, Nami Tanaka, Taro Nishimura, Hirotaka Iino, Ken Goto, Masato Ishikawa, Hideaki Machida, Tomo Ueno, Yoshinao Kumagai
Summary: The effect of high temperature homoepitaxial growth of (010) beta-Ga2O3 layer by low pressure hot-wall metal-organic vapor phase epitaxy was investigated. The growth rate decreased and the growth mode changed as the growth temperature increased. A smooth, twin-free single-crystalline homoepitaxial layer with a structural quality equivalent to that of the substrate could be grown at 1000 degrees C. The grown layers were all n-type and showed an effective donor concentration approximately equal to the Si impurity concentration.
JOURNAL OF CRYSTAL GROWTH
(2022)
Article
Crystallography
Bei Xu, Jichao Hu, Jiaqi Meng, Xiaomin He, Hongjuan Cheng, Jian Wang, Xi Wang, Hongbin Pu
Summary: Due to the low thermal conductivity of beta-Ga2O3, gallium oxide power devices based on high thermal conductivity substrates, such as 4H-SiC, have been extensively studied. In this study, first principles calculations are used to analyze the interfacial properties of beta-Ga2O3 (10 0)/4H-SiC (0001) heterointerfaces. It is found that six different interface models can be stable, with the Si-O interface showing the highest thermodynamic stability. The electronic properties of these interface models are also investigated, showing that electrons mainly transfer from the 4H-SiC side to the beta-Ga2O3 side. The bonding strength and stability of the interfaces are discussed based on the charge density, bader charge, electron local function, and partial density of states.
JOURNAL OF CRYSTAL GROWTH
(2023)
Article
Chemistry, Physical
Jianguo Zhang, Wei Wang, Simiao Wu, Zhiming Geng, Jinfu Zhang, Li Chen, Ningtao Liu, Xuejun Yan, Wenrui Zhang, Jichun Ye
Summary: This study reports the controlled growth of metastable gallium oxide films by pulsed laser deposition (PLD) and explores a comprehensive phase evolution picture tuned by synthesis parameters, substrate orientations, and Sn dopants. The stabilization of both undoped and Sn-doped α-Ga2O3 films on a-plane sapphire substrates is demonstrated, and Sn dopants can broaden the growth window of α-Ga2O3. Sn-doped ε-Ga2O3 is more favored than β-Ga2O3 to be stabilized on c-plane substrates, and oxygen pressure is critical for ε-Ga2O3 formation. The structural impact on thermal transport among these metastable Ga2O3 films is investigated, showing different thermal conductivities. This study provides a synthesis guideline for metastable Ga2O3 polymorphs and insights into selective phase stabilization of transition metal oxides.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Crystallography
K. Ben Saddik, A. F. Brana, N. Lopez, B. J. Garcia, S. Fernandez-Garrido
Summary: A wide range of n- and p-type doping levels in GaAs layers grown by chemical beam epitaxy can be achieved by adjusting the concentration or flux of diluted precursors. The incorporation of Si shows a linear dependence on the diluted-precursor flux, while C doping exhibits a superlinear behavior. Analysis by low-temperature photoluminescence spectroscopy suggests that diluting DTBSi or CBr4 with H-2 does not affect the electrical and optical properties of GaAs.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Materials Science, Ceramics
Alexander W. Auner, Mark A. Burton, Lauren A. Nagel, Jonathan C. Crowhurst, David G. Weisz, Kimberly B. Knight
Summary: Different cerium oxides can be formed in high-temperature laser experiments by varying the availability of oxygen and the use of different laser heating methods. X-ray diffraction and Raman spectroscopy suggest the formation of a low structural order Ce2O3/CeO2 mixed structure using pulsed laser ablation in a 1% O2 atmosphere. Crystalline A-type Ce2O3 is formed near the point of laser impingement when using continuous wave laser heating in a 1% O2 environment. The Raman spectrum of Ce218O3 is reported for the first time through experiments conducted with 18O2.
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
(2023)
Article
Materials Science, Multidisciplinary
Sergiy Khartsev, Mattias Hammar, Nils Nordell, Aleksejs Zolotarjovs, Juris Purans, Anders Hallen
Summary: Reverse-biased Er-doped beta-Ga2O3 Schottky barrier diodes, prepared by pulsed laser deposition, exhibit strong electroluminescence with a rectification ratio of over nine orders of magnitude and a leakage current density of 0.2-0.4 A cm(-2). The electroluminescence is homogeneously distributed across the diode area and the peak wavelengths are consistent with reported transitions for Er3+.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2022)
Article
Chemistry, Multidisciplinary
Kohei Yoshimatsu, Hiroshi Kumigashira
Summary: High-quality metastable lambda-phase trititanium pentoxide (λ-Ti3O5) films were grown at very high temperatures via pulsed-laser deposition, directly on the substrate surface without transient layers. The monoclinic lambda-Ti3O5 films obtained were nearly single-domain with less than 1% rotational domains on pseudocubic LaAlO3 substrates. The successful synthesis of these films enables the utilization of their rich functionalities.
CRYSTAL GROWTH & DESIGN
(2022)
Article
Physics, Applied
Suguri Uchida, Takuto Soma, Miho Kitamura, Hiroshi Kumigashira, Akira Ohtomo
Summary: This study reports the growth of SnO films on specific substrates and demonstrates the significant impact of surface treatment on optical transparency, resulting in enhanced visible transmittance of the films. This enhancement is attributed to the suppression of midgap states near the film surface.
JAPANESE JOURNAL OF APPLIED PHYSICS
(2022)
Article
Physics, Applied
Shuxin Zhang, Tatsuya Yajima, Takuto Soma, Akira Ohtomo
Summary: In this study, two polymorphs of MoO3 were epitaxially grown on the (100) plane of cubic perovskites using pulsed-laser deposition. The impacts of Li-ion intercalation on each phase were investigated through electrochemical testing. The alpha-MoO3 films transformed to an amorphous phase after a single electrochemical cycle, while the beta-MoO3 films showed reversible cyclic voltammogram against repeated electrochemical cycles.
APPLIED PHYSICS EXPRESS
(2022)
Article
Chemistry, Multidisciplinary
Laura E. Ratcliff, Takayoshi Oshima, Felix Nippert, Benjamin M. Janzen, Elias Kluth, Rudiger Goldhahn, Martin Feneberg, Piero Mazzolini, Oliver Bierwagen, Charlotte Wouters, Musbah Nofal, Martin Albrecht, Jack E. N. Swallow, Leanne A. H. Jones, Pardeep K. Thakur, Tien-Lin Lee, Curran Kalha, Christoph Schlueter, Tim D. Veal, Joel B. Varley, Markus R. Wagner, Anna Regoutz
Summary: Ga2O3 and its polymorphs have great potential for electronic structure engineering. In this study, a robust atomistic model of gamma-Ga2O3 is developed using density functional theory and machine-learning approach, which is validated by experimental results. This work is of significant importance for understanding the electronic structure of complex, disordered oxides.
ADVANCED MATERIALS
(2022)
Article
Physics, Applied
Takayoshi Oshima
Summary: In this study, a patterned metal on a beta-Ga2O3 substrate surface was used as an embedded photomask to demonstrate the applicability of backside-exposure lithography to beta-Ga2O3 substrates. Self-aligned photoresist patterning, lift-off, and etching processes were demonstrated for an AZ5214E photoresist in both the positive and negative processing modes. The findings suggest that backside-exposure photolithography is a promising fabrication approach for future beta-Ga2O3-based devices.
JAPANESE JOURNAL OF APPLIED PHYSICS
(2023)
Article
Physics, Applied
Hitoshi Takane, Takayoshi Oshima, Katsuhisa Tanaka, Kentaro Kaneko
Summary: Selective-area growth of r-SnO2 was achieved on a SiO2-masked r-TiO2 (110) substrate. The heteroepitaxy process led to the growth of islands with {100}-, {110}-, and {011}-faceted sidewalls, which matched the equilibrium shape of the rutile structure. Coalescence of the islands formed a flat (110) top surface on the striped window, followed by lateral overgrowth. Cross-sectional transmission-electron-microscopy observation revealed that misfit dislocations propagated perpendicular to the facet planes due to the image force effect, and the dislocation density decreased significantly in the wing regions.
APPLIED PHYSICS EXPRESS
(2023)
Article
Physics, Applied
Takayoshi Oshima, Yuichi Oshima
Summary: We have demonstrated the effectiveness of plasma-free HCl gas etching for fabricating high-aspect-ratio fins/trenches on a SiO2-masked (010) beta-Ga2O3 substrate. The etching process resulted in the formation of holes or trenches with etching-resistant (100)- and ((1) over bar 01)-faceted sidewalls. By etching in the striped windows along [001], we achieved fins and trenches with flat (100)-faceted vertical sidewalls and slightly rough {310}-faceted inclined bottom corners. The vertical-to-horizontal etching ratio was as high as about 11-14. Our findings suggest that HCl etching is a promising method for such fabrication without plasma damage.
APPLIED PHYSICS EXPRESS
(2023)
Article
Physics, Applied
Takayoshi Oshima, Yuichi Oshima
Summary: In this study, SiO2-masked (001) beta-Ga2O3 substrates were dry etched in HCl gas flow at a high temperature without plasma excitation. The etching selectively formed holes or trenches with inner sidewalls of (100) and/or {310} facets, which are planes of lowest surface energy density and oxygen-close-packed slip planes, respectively. The (100) faceted sidewalls were flat and close to the substrate surface normal. This dry etching method shows promise for fabricating plasma-damage-free trenches and fins for beta-Ga2O3-based power devices.
APPLIED PHYSICS LETTERS
(2023)
Article
Materials Science, Multidisciplinary
Tatsuhiko Kanda, Daisuke Shiga, Asato Wada, Ryotaro Hayasaka, Yuuki Masutake, Naoto Hasegawa, Miho Kitamura, Kohei Yoshimatsu, Hiroshi Kumigashira
Summary: Quantized states in strongly correlated oxide nanostructures are crucial for designing quantum devices in future electronics. In situ ARPES measurements in SrTi1-xVxO3 reveal that the electron mean free path is a key parameter for controlling and designing quantized states in these structures.
COMMUNICATIONS MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
D. Shiga, X. Cheng, T. T. Kim, T. Kanda, N. Hasegawa, M. Kitamura, K. Yoshimatsu, H. Kumigashira
Summary: Through in situ photoemission spectroscopy, the changes in the electronic structure of Cr-doped VO2 films on TiO2 substrates were investigated. The phase diagram of CrxV1-xO2 was obtained, showing the influence of strain effect on the metal-insulator transition temperature. The spectroscopic investigations revealed the changes in energy gap and V 3d states, as well as the existence of Mott insulating phase without V-V dimerization at high doping concentration.
Article
Materials Science, Multidisciplinary
K. Yoshimatsu, S. Miyazaki, N. Hasegawa, H. Kumigashira
Summary: In this study, we successfully synthesized Ti2O3 epitaxial films with different c/a ratios by changing the growth temperature. We found that the critical c/a ratio for the metal-insulator transition at room temperature is 2.68, which was also confirmed by density functional theory calculations. These results suggest that the transition in Ti2O3 is a gradual semimetal-to-semiconductor transition induced by lattice deformation.
Article
Materials Science, Multidisciplinary
Naoto Hasegawa, Kohei Yoshimatsu, Daisuke Shiga, Tatsuhiko Kanda, Satoru Miyazaki, Miho Kitamura, Koji Horiba, Hiroshi Kumigashira
Summary: Ti2O3 exhibits a unique metal-insulator transition accompanied by lattice deformation. Electron-electron correlation plays an important role in its electronic structure and transition process. The electronic band structure of insulating Ti2O3 films with slight hole doping is obtained using ARPES.
Article
Materials Science, Multidisciplinary
Takuto Soma, Kohei Yoshimatsu, Koji Horiba, Hiroshi Kumigashira, Akira Ohtomo
Summary: The oxide superconductor Li1-xNbO2, with two-dimensional NbO2 layers, exhibits 2D superconductivity and large anisotropy in the upper critical field. The temperature-independent anisotropy suggests single-band superconductivity, which is different from other materials with similar structures. The study also reveals a narrow and correlated single band in the 2D NbO2 layers of Li1-xNbO2, similar to the superconductivity in cuprates.
Article
Chemistry, Multidisciplinary
Kohei Yoshimatsu, Hiroshi Kumigashira
Summary: High-quality metastable lambda-phase trititanium pentoxide films were successfully grown on substrates via pulsed-laser deposition at very high growth temperature. These films directly formed on substrates without any detectable transient layers, containing almost single domains with very low fraction of rotational domains. The successful synthesis of these metastable films enables the utilization of their rich functionalities.
CRYSTAL GROWTH & DESIGN
(2022)
Article
Crystallography
Jianzheng Hu, Long Yan, Ning Zhou, Yao Chen, Xiaoni Yang, Lianqiao Yang, Shiping Guo
Summary: The effect and mechanism of carrier gas velocity, V/III ratio, and carrier gas velocity match on the growth rate of AlN were investigated in this study. The results showed that the growth rate of AlN initially increased with hydrogen flow rate, reached saturation, and then decreased monotonically. The turning point value depended on the equipment and process. By increasing the MO VM, the growth rate of AlN could be improved, but the uniformity deteriorated due to turbulence and loss of uniform boundary layer. High quality AlN films were successfully grown on nano-patterned sapphire substrates with improved crystalline quality and atomic smooth surfaces.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Tingting Ma, Yang Li, Kangning Sun, Qinglin Cheng, Sen Li
Summary: This study investigates the melting process and nucleation behavior of sodium crystals using molecular dynamics simulation. The results show good agreement between simulated and experimental values for the melting temperature, density, and radial distribution function of sodium. The diffusion coefficient of liquid sodium increases linearly with temperature, and the homogeneous nucleation rate of melting in superheated sodium crystal exponentially increases with temperature. The findings provide theoretical support for applications involving heat and mass transfer in sodium-related systems.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Hisato Nishii, Shintarou Iida, Akira Yamasaki, Takumi Ikenoue, Masao Miyake, Toshiya Doi, Tetsuji Hirato
Summary: Epitaxial V2O3 films were fabricated on sapphire substrates using mist chemical vapor deposition (mist CVD) method, eliminating the need for high vacuum conditions. The films can be grown on sapphire substrates even under atmospheric pressure, with the optimal growth temperature at 823 K. The films grown at 823 K exhibit a metal-insulator transition at approximately 155 K. The film on C-plane sapphire exhibits a lower transition temperature compared to those on R- and A-plane sapphire substrates.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Jani Jesenovec, Kevin Zawilski, Peter Alison, Stephan J. Meschter, Sambit K. Saha, Andrew J. Sepelak, Peter G. Schunemann
Summary: In this study, NiSb needles were successfully formed in InSb by manipulating the growth rate and adding NiSb. These needle structures in InSb can be used to tune the magnetoresistance of devices. Additionally, undoped InSb crystals demonstrated good infrared transmission at low growth rates.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
D. Joseph Daniel, P. Karuppasamy, H. J. Kim
Summary: The 2-amino 4-methyl pyridinium oxalate (2A4MPO) compound was synthesized and its crystal structure, functional groups, thermal stability, electrical properties, and third-order nonlinear optical properties were studied. The results demonstrate that the synthesized crystal has good structural integrity, thermal stability, and potential for third-order nonlinear optical applications.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
C. W. Lan
Summary: The past two decades have witnessed a significant transformation in solar silicon crystal growth, especially in the competition between multi-crystalline silicon (Multi-Si) and mono-crystalline silicon (Mono-Si). The demand for this crucial material has exponentially surged, with silicon solar panels capturing over 95% of the global PV market share. The advancements in crystal growth technology during this period have set historical benchmarks, with the market share shifting from high-performance multi-crystalline silicon (HPM-Si) to CZ silicon.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Peiyao Hao, Lili Zheng, Hui Zhang
Summary: A novel design of argon gas tube for removing impurities during silicon ingot growth was developed, and numerical simulations showed that it can effectively extract SiO.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Geetika Sahu, Chanchal Chakraborty, Subhadeep Roy, Souri Banerjee
Summary: This article discusses the novel fractal nature of hydrothermally synthesized MoS2 QDs. By adjusting the reaction time, the study found that the average size of QDs increases and then decreases with longer reaction times. STEM images indicate that shorter reaction times lead to sheet formation, while extended reaction times cause sheets to fragment into QDs.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Pengjian Lu, Wei Huang, Junjun Wang, Haitao Yang, Shiyue Guo, Bin Li, Ting Wang, Chitengfei Zhang, Rong Tu, Song Zhang
Summary: A systematic study on the tetramethylsilane-hydorgen (TMS-H-2) system for the deposition of pure single-crystal SiC by high-temperature chemical vapor deposition (HTCVD) method is conducted. The study investigates the effect of temperature, pressure, and H-2:TMS ratio on the deposition conditions and provides a theoretical basis and guidance for improving the quality and cost of industrial production of single-crystal SiC.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Xinyu Jiang, Liangliang Liu, Yanqing Liu, Yan Wang, Zhaoping Hou
Summary: Investigation on the preparation of anisometric templated textured high entropy or multi-element doped ferroelectric ceramics was conducted using A-site disordered niobate microcrystals. The effects of process parameters on the morphology and chemical composition were studied, and the photocatalytic properties of the microcrystals were evaluated.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Mobashsara Tabassum, Md. Ashraful Alam, Sabrina Mostofa, Raton Kumar Bishwas, Debasish Sarkar, Shirin Akter Jahan
Summary: In this study, high crystallinity copper nanoparticles were synthesized by altering the reaction medium at low temperatures. The results show that changing the reaction medium can reduce the surface energy of precursors and promote the formation of highly crystalline copper nanoparticles.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Ivan Bodnar, Vitaly V. Khoroshko, Veronika A. Yashchuk, Valery F. Gremenok, Mohsin Kazi, Mayeen U. Khandaker, Tatiana I. Zubar, Daria I. Tishkevich, Alex Trukhanov, Sergei Trukhanov
Summary: This work presents the production of single crystals of Cu2ZnGeSe4, a semiconducting quaternary compound, using a gas chemical method with iodine as a transporter. The phase state, crystal structure, and lattice constants of the synthesized samples were refined and determined. The band gap of Cu2ZnGeSe4 was calculated using transmission spectrum and it was found that the band gap increases by 12% with decreasing temperature in the range of 20-300 K.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Timur Malin, Igor Osinnykh, Vladimir Mansurov, Dmitriy Protasov, Sergey Ponomarev, Denis Milakhin, Konstantin Zhuravlev
Summary: The effect of growth temperature on the buffer leakage currents of GaN-on-Si layers was investigated. It was found that higher growth temperature results in lower leakage currents. The defects in GaN layers grown at different temperatures were studied using photoluminescence technique, and a correlation between leakage currents, structural perfection, and donor concentration in GaN-on-Si layers was established. It was also observed that reduced growth temperature leads to the formation of inversion domains.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Thi-Hoai-Thu Nguyen, Jyh-Chen Chen
Summary: The effect of heater power control on heat, flow, and oxygen transport for CCz crystal growth was studied. Shorter upper side heater design could improve crystal quality and growth, but with higher power consumption.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Peter Rudolph
Summary: This article presents an overview of selected contributions to the development of crystal growth technology by the Laudise Prize awardee 2023. It discusses various aspects such as shaped crystal growth, the correlation between melt structure and crystal quality, control of intrinsic defects and inclusions, prevention of dislocation cell patterns, and melt growth experiments under a travelling magnetic field.
JOURNAL OF CRYSTAL GROWTH
(2024)
