Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 51, Issue 11, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1143/JJAP.51.111001
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- SERC/A*STAR [102-169-0126, 102-169-030]
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We report for the first time the DC and microwave characteristics of sub-micron gate (similar to 0.3 mu m) AlGaN/GaN high-electron-mobility transistors (HEMTs) on 8-in. diameter Si(111) substrate. The fabricated sub-micron gate devices on crack-free AlGaN/GaN HEMT structures exhibited good pin.-off characteristics with a maximum drain current density of 853 mA/mm and a maximum extrinsic transconductance of 180 mS/mm. The device exhibited unit current-gain cut-off frequency of 28 GHz, maximum oscillation frequency of 64 GHz and OFF-state breakdown voltage of 60 V. This work demonstrates the feasibility of achieving good performance AlGaN/GaN HEMTs on 8-in. diameter Si(111) for low-cost high-frequency and high-power switching applications. (C) 2012 The Japan Society of Applied Physics
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