Article
Engineering, Electrical & Electronic
Soyoon Kim, Jungbok Lee, Hyungsoo Ahn, Kyounghwa Kim, Min Yang
Summary: Ga2O3 thin films were hetero-epitaxially grown on 4H-SiC substrates using MOCVD. The crystal quality of the epsilon-Ga2O3 thin films grown on Si-face and C-face of 4H-SiC substrates was compared. Results showed that the epsilon-Ga2O3 film grown on a Si-face substrate exhibited better crystal quality compared to growth on a C-face. Annealing the epsilon-Ga2O3 thin film in an oxygen atmosphere transformed the crystal phase and significantly reduced the roughness.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Crystallography
Hidetoshi Nakahata, Rie Togashi, Ken Goto, Bo Monemar, Yoshinao Kumagai
Summary: The study investigated the influence of growth conditions on the halide vapor phase epitaxy of In2O3 on sapphire substrates. It was found that growth temperature and input partial pressure of source gas play a crucial role in determining the growth rate, crystal orientation, and purity of the grown layers. The layers grown at higher temperatures exhibited different preferred orientations and surface characteristics, with the highest growth rate exceeding 10 μm/h at 1000 degrees C.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Crystallography
Kazutada Ikenaga, Nami Tanaka, Taro Nishimura, Hirotaka Iino, Ken Goto, Masato Ishikawa, Hideaki Machida, Tomo Ueno, Yoshinao Kumagai
Summary: The effect of high temperature homoepitaxial growth of (010) beta-Ga2O3 layer by low pressure hot-wall metal-organic vapor phase epitaxy was investigated. The growth rate decreased and the growth mode changed as the growth temperature increased. A smooth, twin-free single-crystalline homoepitaxial layer with a structural quality equivalent to that of the substrate could be grown at 1000 degrees C. The grown layers were all n-type and showed an effective donor concentration approximately equal to the Si impurity concentration.
JOURNAL OF CRYSTAL GROWTH
(2022)
Article
Crystallography
Rie Togashi, Ryo Kasaba, Ken Goto, Yoshinao Kumagai, Akihiko Kikuchi
Summary: The HEATE method demonstrated high controllability and large-area adaptability for etching c-In2O3 layers, with the etching rate ranging from 1 to 75 nm min(-1) under different temperatures and pressures. The experimental results were in good agreement with thermodynamic analysis, indicating that the etching process follows thermodynamics.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Crystallography
Xueyi Zheng, Jun Zheng, Chen He, Xiangquan Liu, Yuhua Zuo, Buwen Cheng, Chuanbo Li
Summary: Thin beta-(AlxGa1-x)2O3 films were grown on (2 0 1) beta-Ga2O3 substrates using MOCVD. The Al content and band gap energy of beta-(AlxGa1-x)2O3 were determined, with a band gap of 5.26 eV found for 24.1% Al content. Surface morphology analysis showed a smooth surface with bar-like particles. The growth model suggested that the film exhibited step bunching and the roughness decreased with higher Al content. Additionally, beta-(AlxGa1-x)2O3/Ga2O3 multi-quantum well structures were successfully grown and characterized.
JOURNAL OF CRYSTAL GROWTH
(2023)
Article
Materials Science, Multidisciplinary
T. M. Aper, F. K. Yam, K. G. Saw, Khi Poay Beh, Khaled M. Chahrour
Summary: In this study, indium oxide nanostructured films were synthesized using hydrogen assisted atmospheric pressure chemical vapor deposition technique at different deposition temperatures. The films' surface morphology, crystallinity, and optical properties were characterized, and their photoelectrochemical (PEC) activity was investigated. The sample grown at 950 degrees C exhibited optimal PEC performance, with high photocurrent density, incident photon to current conversion efficiency, and applied bias to photon conversion efficiency. The superior PEC performance of the sample was attributed to the film composition, crystallinity, bandgap reduction, flat band potential, and charge carrier density.
RESULTS IN PHYSICS
(2021)
Article
Chemistry, Multidisciplinary
Seyeon Park, SungHyun Jeon, Honghui Kim, James Philips, DongHwan Oh, Jaewan Ahn, Minhyun Kim, Chungseong Park, Seungbum Hong, Jihan Kim, WooChul Jung, Il-Doo Kim
Summary: Activation of metal oxides by light is a powerful method to modify their surface chemistry for efficient heterogeneous catalysis and gas sensing. However, understanding of the interface chemistry and mechanism restricts the rational design of oxide interfaces for light-activated gas sensing. In this study, the TiOx-assisted photosensitization of In2O3 towards NO2 sensing was investigated to elucidate the detailed mechanism of light-activated surface chemistry at the metal/gas interface. The resulting heterogeneous oxides demonstrated remarkable NO2 sensing performance under light irradiation due to abundant photoexcited electrons and holes that facilitated surface reactions. Moreover, the easy transfer of electrons and holes across the TiOx-In2O3 interface improved the reversibility of sensing kinetics. This study provides mechanistic insight into how surface chemistry of metal oxides can be controlled by light activation, offering an effective approach for designing high-performance gas sensors.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Crystallography
C. R. Tait, S. R. Lee, J. Deitz, M. A. Rodriguez, D. L. Alliman, B. P. Gunning, G. M. Peake, A. Sandoval, N. R. Valdez, P. R. Sharps
Summary: Progress has been made in the synthesis of semimetal Cd3As2 by metal-organic chemical-vapor deposition (MOCVD), with optimized growth conditions revealing that InAs-terminated substrates yield the most desirable results. Advanced imaging techniques and x-ray diffraction modalities have been utilized to extensively study the microstructure of Cd3As2 thin films, showing smooth and specular surfaces with low roughness. The films exhibit strain relaxation and belong to the P4(2)/nbc space group, positioning MOCVD-grown Cd3As2 as a Dirac semimetal of interest for topological quantum materials research.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Crystallography
Edgars Butanovs, Martins Zubkins, Ramunas Nedzinskas, Veronika Zadin, Boris Polyakov
Summary: Gallium oxide (Ga2O3) has potential as a new ultra-wide bandgap semiconductor, but its widespread use is limited by the lack of native p-type conductivity. Spinel zinc gallate (ZnGa2O4) is a potential matching material. In this study, two novel approaches of preparing one-dimensional Ga2O3-ZnGa2O4 core-shell nanowires were demonstrated and compared: direct deposition of a ZnGa2O4 coating using reactive magnetron co-sputtering, and annealing of a sacrificial ZnO coating to enable solid state reaction between ZnO and Ga2O3. The as-grown nanostructures were characterized using various techniques. The sacrificial layer conversion method resulted in a smoother and more uniform ZnGa2O4 coating. These heterostructures could be used for photocatalysis and nanoscale ultra-wide bandgap electronics.
JOURNAL OF CRYSTAL GROWTH
(2023)
Article
Crystallography
Junhong Chen, Min Guan, Shangyu Yang, Siqi Zhao, Guoguo Yan, Zhanwei Shen, Wanshun Zhao, Lei Wang, Xingfang Liu, Guosheng Sun, Yiping Zeng
Summary: SiC is an excellent semiconductor material with high thermal conductivity, stable chemical properties, and high critical breakdown field strength. This paper investigates the epitaxial growth of SiC on n-type SiC substrates and analyzes the effects of growth temperature on the surface morphology of SiC epitaxial layers. The results show that higher growth temperature can lead to smoother surface and higher content of 4H-SiC.
JOURNAL OF CRYSTAL GROWTH
(2023)
Article
Chemistry, Multidisciplinary
Diane Samelor, Asiya Turgambaeva, Vladislav Krisyuk, Adeline Miquelot, Jeremy Cure, Sergey Sysoev, Sergey Trubin, Pavel Stabnikov, Jerome Esvan, Vassilios Constandoudis, Constantin Vahlas
Summary: The study investigated the use of two solid precursors for the chemical vapor deposition of TiO2 films, revealing differences in film structure and photocatalytic performance between the two precursors.
Article
Physics, Applied
Kensuke Akiyama, Masaru Itakura
Summary: Semiconducting iron disilicide (beta-FeSi2) films were epitaxially grown on Silver (Ag) pre-coated Silicon (Si) substrates with an initial beta-FeSi2 layer using metal-organic chemical vapor deposition. The crystal quality of these beta-FeSi2 films improved with increasing growth temperature, exhibiting (101)-preferred orientations. The photoluminescence intensity of the (101)-oriented beta-FeSi2 films grown at 973 K was higher compared to films grown at other temperatures, indicating a decrease in nonradiative recombination centers. The films showed significant A-band emission from beta-FeSi2 up to 285 K, which was attributed to improved crystallinity and decreased density of thermal equilibrium Si vacancy.
JAPANESE JOURNAL OF APPLIED PHYSICS
(2023)
Article
Crystallography
Pierre Tomasini
Summary: Chemical Vapor Deposition introduces atomic elements into solid materials via a gas phase, with knowledge of the vapor-solid distribution being crucial. Despite being a non-equilibrium process, analysis of the silicon germanium CVD shows the development of a theory on heterogeneous chemical equilibrium. The laws necessary for determining vapor-solid distributions of Si1-xGex and other binary alloys are now fully understood.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Crystallography
Yuichi Oshima, Shingo Yagyu, Takashi Shinohe
Summary: Etch pits were observed on a c-plane alpha-Ga2O3 epilayer using HCl gas etching, indicating a correlation between etch pit density and dislocation density. Gas-etching technique can effectively reveal dislocation distribution in a wide area, which is challenging to explore using traditional TEM.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Engineering, Electrical & Electronic
Kazuki Shimazoe, Hiroyuki Nishinaka, Keisuke Watanabe, Masahiro Yoshimoto
Summary: In this study, rh-ITO thin films with different Sn concentrations were successfully grown using the mist chemical vapor deposition method. The films exhibited low resistivity, high transmittance, and can be used as transparent conductive oxide materials.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Physics, Applied
Kentaro Kaneko, Shizuo Fujita, Toshimi Hitora
JAPANESE JOURNAL OF APPLIED PHYSICS
(2018)
Article
Physics, Applied
Takayuki Uchida, Riena Jinno, Shu Takemoto, Kentaro Kaneko, Shizuo Fujita
JAPANESE JOURNAL OF APPLIED PHYSICS
(2018)
Article
Engineering, Electrical & Electronic
Kentaro Kaneko, Keiichi Tsumura, Kyohei Ishii, Takayoshi Onuma, Tohru Honda, Shizuo Fujita
JOURNAL OF ELECTRONIC MATERIALS
(2018)
Article
Physics, Condensed Matter
Riena Jinno, Takayuki Uchida, Kentaro Kaneko, Shizuo Fujita
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
(2018)
Article
Physics, Applied
Kyohei Ishii, Mizuki Ono, Kentaro Kaneko, Takeyoshi Onuma, Tohru Honda, Shizuo Fujita
APPLIED PHYSICS EXPRESS
(2019)
Article
Physics, Applied
M. Ono, K. Ishii, K. Kaneko, T. Yamaguchi, T. Honda, S. Fujita, T. Onuma
JOURNAL OF APPLIED PHYSICS
(2019)
Article
Physics, Applied
Riena Jinno, Nobuhiro Yoshimura, Kentaro Kaneko, Shizuo Fujita
JAPANESE JOURNAL OF APPLIED PHYSICS
(2019)
Article
Physics, Applied
Tomohiro Yamaguchi, Subaru Takahashi, Takanori Kiguchi, Atsushi Sekiguchi, Kentaro Kaneko, Shizuo Fujita, Hiroki Nagai, Mitsunobu Sato, Takeyoshi Onuma, Tohru Honda
APPLIED PHYSICS EXPRESS
(2020)
Article
Physics, Applied
Riena Jinno, Kentaro Kaneko, Shizuo Fujita
Summary: The thermal stability of alpha-(AlxGa1-x)(2)O-3 films grown on c-plane sapphire substrates was explored through annealing at different temperatures. It was found that lower Al composition led to phase transformation to the most stable phase for Ga2O3, while higher Al composition improved thermal stability. Films with x = 0.45 maintained the corundum structure after annealing at 950 degrees C, while layers with Al contents above 0.6 remained stable and did not undergo phase transformation at 1100 degrees C.
JAPANESE JOURNAL OF APPLIED PHYSICS
(2021)
Article
Physics, Applied
Kentaro Kaneko, Yasuhisa Masuda, Shin-ichi Kan, Isao Takahashi, Yuji Kato, Takashi Shinohe, Shizuo Fujita
Summary: Ultra-wide bandgap p-type alpha-(Ir,Ga)(2)O-3 films were achieved through unintentional or Mg doping, showing potential for high-quality pn heterojunction formation with n-type alpha-Ga2O3 due to their similar crystal structures and good lattice matching. Initial testing of a pn junction diode composed of these materials demonstrated promising performance.
APPLIED PHYSICS LETTERS
(2021)
Article
Physics, Condensed Matter
Hitoshi Takane, Kentaro Kaneko, Takashi Shinohe, Shizuo Fujita
Summary: Deep traps in n-type alpha-Ga2O3 grown by mist chemical vapor deposition are analyzed, revealing trap levels at approximately 2.0 eV, 2.5 eV, and 3.2 eV. The concentrations of these traps are lower than previously reported for alpha-Ga2O3, and a large Frank-Condon shift indicates a high degree of lattice coupling in the midgap state of alpha-Ga2O3.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
(2021)
Article
Physics, Applied
Hitoshi Takane, Kentaro Kaneko, Yuichi Ota, Shizuo Fujita
Summary: The study compared the growth characteristics of α-Ga2O3 under different growth methods and revealed the unique mechanism of mist CVD-grown α-Ga2O3.
JAPANESE JOURNAL OF APPLIED PHYSICS
(2021)
Article
Nanoscience & Nanotechnology
Riena Jinno, Kentaro Kaneko, Shizuo Fujita
Proceedings Paper
Engineering, Electrical & Electronic
K. Kudo, K. Ishii, M. Ono, Y. Fujiwara, K. Kaneko, T. Yamaguchi, T. Honda, S. Fujita, T. Onuma
2019 COMPOUND SEMICONDUCTOR WEEK (CSW)
(2019)
Article
Materials Science, Multidisciplinary
Takayuki Uchida, Kentaro Kaneko, Shizuo Fujita
Article
Crystallography
Jianzheng Hu, Long Yan, Ning Zhou, Yao Chen, Xiaoni Yang, Lianqiao Yang, Shiping Guo
Summary: The effect and mechanism of carrier gas velocity, V/III ratio, and carrier gas velocity match on the growth rate of AlN were investigated in this study. The results showed that the growth rate of AlN initially increased with hydrogen flow rate, reached saturation, and then decreased monotonically. The turning point value depended on the equipment and process. By increasing the MO VM, the growth rate of AlN could be improved, but the uniformity deteriorated due to turbulence and loss of uniform boundary layer. High quality AlN films were successfully grown on nano-patterned sapphire substrates with improved crystalline quality and atomic smooth surfaces.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Tingting Ma, Yang Li, Kangning Sun, Qinglin Cheng, Sen Li
Summary: This study investigates the melting process and nucleation behavior of sodium crystals using molecular dynamics simulation. The results show good agreement between simulated and experimental values for the melting temperature, density, and radial distribution function of sodium. The diffusion coefficient of liquid sodium increases linearly with temperature, and the homogeneous nucleation rate of melting in superheated sodium crystal exponentially increases with temperature. The findings provide theoretical support for applications involving heat and mass transfer in sodium-related systems.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Hisato Nishii, Shintarou Iida, Akira Yamasaki, Takumi Ikenoue, Masao Miyake, Toshiya Doi, Tetsuji Hirato
Summary: Epitaxial V2O3 films were fabricated on sapphire substrates using mist chemical vapor deposition (mist CVD) method, eliminating the need for high vacuum conditions. The films can be grown on sapphire substrates even under atmospheric pressure, with the optimal growth temperature at 823 K. The films grown at 823 K exhibit a metal-insulator transition at approximately 155 K. The film on C-plane sapphire exhibits a lower transition temperature compared to those on R- and A-plane sapphire substrates.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Jani Jesenovec, Kevin Zawilski, Peter Alison, Stephan J. Meschter, Sambit K. Saha, Andrew J. Sepelak, Peter G. Schunemann
Summary: In this study, NiSb needles were successfully formed in InSb by manipulating the growth rate and adding NiSb. These needle structures in InSb can be used to tune the magnetoresistance of devices. Additionally, undoped InSb crystals demonstrated good infrared transmission at low growth rates.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
D. Joseph Daniel, P. Karuppasamy, H. J. Kim
Summary: The 2-amino 4-methyl pyridinium oxalate (2A4MPO) compound was synthesized and its crystal structure, functional groups, thermal stability, electrical properties, and third-order nonlinear optical properties were studied. The results demonstrate that the synthesized crystal has good structural integrity, thermal stability, and potential for third-order nonlinear optical applications.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
C. W. Lan
Summary: The past two decades have witnessed a significant transformation in solar silicon crystal growth, especially in the competition between multi-crystalline silicon (Multi-Si) and mono-crystalline silicon (Mono-Si). The demand for this crucial material has exponentially surged, with silicon solar panels capturing over 95% of the global PV market share. The advancements in crystal growth technology during this period have set historical benchmarks, with the market share shifting from high-performance multi-crystalline silicon (HPM-Si) to CZ silicon.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Peiyao Hao, Lili Zheng, Hui Zhang
Summary: A novel design of argon gas tube for removing impurities during silicon ingot growth was developed, and numerical simulations showed that it can effectively extract SiO.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Geetika Sahu, Chanchal Chakraborty, Subhadeep Roy, Souri Banerjee
Summary: This article discusses the novel fractal nature of hydrothermally synthesized MoS2 QDs. By adjusting the reaction time, the study found that the average size of QDs increases and then decreases with longer reaction times. STEM images indicate that shorter reaction times lead to sheet formation, while extended reaction times cause sheets to fragment into QDs.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Pengjian Lu, Wei Huang, Junjun Wang, Haitao Yang, Shiyue Guo, Bin Li, Ting Wang, Chitengfei Zhang, Rong Tu, Song Zhang
Summary: A systematic study on the tetramethylsilane-hydorgen (TMS-H-2) system for the deposition of pure single-crystal SiC by high-temperature chemical vapor deposition (HTCVD) method is conducted. The study investigates the effect of temperature, pressure, and H-2:TMS ratio on the deposition conditions and provides a theoretical basis and guidance for improving the quality and cost of industrial production of single-crystal SiC.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Xinyu Jiang, Liangliang Liu, Yanqing Liu, Yan Wang, Zhaoping Hou
Summary: Investigation on the preparation of anisometric templated textured high entropy or multi-element doped ferroelectric ceramics was conducted using A-site disordered niobate microcrystals. The effects of process parameters on the morphology and chemical composition were studied, and the photocatalytic properties of the microcrystals were evaluated.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Mobashsara Tabassum, Md. Ashraful Alam, Sabrina Mostofa, Raton Kumar Bishwas, Debasish Sarkar, Shirin Akter Jahan
Summary: In this study, high crystallinity copper nanoparticles were synthesized by altering the reaction medium at low temperatures. The results show that changing the reaction medium can reduce the surface energy of precursors and promote the formation of highly crystalline copper nanoparticles.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Ivan Bodnar, Vitaly V. Khoroshko, Veronika A. Yashchuk, Valery F. Gremenok, Mohsin Kazi, Mayeen U. Khandaker, Tatiana I. Zubar, Daria I. Tishkevich, Alex Trukhanov, Sergei Trukhanov
Summary: This work presents the production of single crystals of Cu2ZnGeSe4, a semiconducting quaternary compound, using a gas chemical method with iodine as a transporter. The phase state, crystal structure, and lattice constants of the synthesized samples were refined and determined. The band gap of Cu2ZnGeSe4 was calculated using transmission spectrum and it was found that the band gap increases by 12% with decreasing temperature in the range of 20-300 K.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Timur Malin, Igor Osinnykh, Vladimir Mansurov, Dmitriy Protasov, Sergey Ponomarev, Denis Milakhin, Konstantin Zhuravlev
Summary: The effect of growth temperature on the buffer leakage currents of GaN-on-Si layers was investigated. It was found that higher growth temperature results in lower leakage currents. The defects in GaN layers grown at different temperatures were studied using photoluminescence technique, and a correlation between leakage currents, structural perfection, and donor concentration in GaN-on-Si layers was established. It was also observed that reduced growth temperature leads to the formation of inversion domains.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Thi-Hoai-Thu Nguyen, Jyh-Chen Chen
Summary: The effect of heater power control on heat, flow, and oxygen transport for CCz crystal growth was studied. Shorter upper side heater design could improve crystal quality and growth, but with higher power consumption.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Peter Rudolph
Summary: This article presents an overview of selected contributions to the development of crystal growth technology by the Laudise Prize awardee 2023. It discusses various aspects such as shaped crystal growth, the correlation between melt structure and crystal quality, control of intrinsic defects and inclusions, prevention of dislocation cell patterns, and melt growth experiments under a travelling magnetic field.
JOURNAL OF CRYSTAL GROWTH
(2024)
