Doping and interface of homoepitaxial diamond for electronic applications

Metal oxide semiconductor structure using oxygen-terminated diamond

(2013) G. Chicot et al.   APPLIED PHYSICS LETTERS

Normally-off HfO2-gated diamond field effect transistors

(2013) J. W. Liu et al.   APPLIED PHYSICS LETTERS

High-Current Metal Oxide Semiconductor Field-Effect Transistors on H-Terminated Diamond Surfaces and Their High-Frequency Operation

(2013) Hiroshi Kawarada   JAPANESE JOURNAL OF APPLIED PHYSICS

Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors

(2013) J. W. Liu et al.   JOURNAL OF APPLIED PHYSICS

Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices

(2012) Shaoheng Cheng et al.   APPLIED PHYSICS LETTERS

Electrically driven single-photon source at room temperature in diamond

(2012) N. Mizuochi et al.   Nature Photonics

Fabrication of Metal–Oxide–Diamond Field-Effect Transistors with Submicron-Sized Gate Length on Boron-Doped (111) H-Terminated Surfaces Using Electron Beam Evaporated SiO2 and Al2O3

(2011) Takeyasu Saito et al.   JOURNAL OF ELECTRONIC MATERIALS

Electron emission from diamond p-i-n junction diode with heavily P-doped n+ top layer

(2011) D. Takeuchi et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Demonstration of diamond field effect transistors by AlN/diamond heterostructure

(2011) Masataka Imura et al.   Physica Status Solidi-Rapid Research Letters

Extreme dielectric strength in boron doped homoepitaxial diamond

(2010) Pierre-Nicolas Volpe et al.   APPLIED PHYSICS LETTERS

Passivation of H-terminated diamond with MOCVD-aluminium nitride - a key to understand and stabilize its surface conductivity

(2010) Daniel Kueck et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Hall hole mobility in boron-doped homoepitaxial diamond

(2010) J. Pernot et al.   PHYSICAL REVIEW B

High performance of diamond p+-i-n+ junction diode fabricated using heavily doped p+ and n+ layers

(2009) Kazuihiro Oyama et al.   APPLIED PHYSICS LETTERS

Low specific contact resistance of heavily phosphorus-doped diamond film

(2008) Hiromitsu Kato et al.   APPLIED PHYSICS LETTERS

Characterization of boron doped diamond epilayers grown in a NIRIM type reactor

(2008) V. Mortet et al.   DIAMOND AND RELATED MATERIALS

Metal-to-insulator transition and superconductivity in boron-doped diamond

(2007) E Bustarret et al.   PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES