Journal
APL MATERIALS
Volume 7, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5054394
Keywords
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Funding
- European Social Fund within the Young Investigator Group Oxide Heterostructures [SAB 100310460]
- Deutsche Forschungsgemeinschaft [Sonderforschungsbereich 762]
- Leipzig University
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Material properties of orthorhombic kappa-phase (InxGa1-x)(2)O-3 thin films grown on a c-plane sapphire substrate by pulsed-laser deposition are reported for an indium content up to x similar to 0.35. This extended range of miscibility enables band gap engineering between 4.3 and 4.9 eV. The c-lattice constant as well as the bandgap depends linearly on the In content. For x > 0.35, a phase change to the hexagonal InGaO3(II) and the cubic bixbyite structure occurred. The dielectric function and the refractive index were determined by spectroscopic ellipsometry as a function of the alloy composition. We propose zirconium to induce n-type conductivity and have achieved electrically conducting thin films with a room temperature conductivity of up to 0.1 S/cm for samples with a low In content of about x = 0.01. Temperature-dependent Hall-effect measurements yielded a thermal activation energy of the free electron density of 190 meV. Schottky barrier diodes with rectification ratios up to 106 were investigated by quasi-static capacitance voltage and temperature-dependent current voltage measurements. (C) 2019 Author(s).
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