Tin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline quality

First-principle calculations of electronic structures and polar properties of (κ,ε)-Ga2O3

(2018) Juyeong Kim et al.   Applied Physics Express

Heteroepitaxial growth of ε-(AlxGa1−x)2O3 alloy films on c-plane AlN templates by mist chemical vapor deposition

(2018) Daisuke Tahara et al.   APPLIED PHYSICS LETTERS

Growth Pressure Controlled Nucleation Epitaxy of Pure Phase ε- and β-Ga2O3 Films on Al2O3 via Metal–Organic Chemical Vapor Deposition

(2018) Yuanpeng Chen et al.   CRYSTAL GROWTH & DESIGN

HCl Flow-Induced Phase Change of α-, β-, and ε-Ga2O3 Films Grown by MOCVD

(2018) Haiding Sun et al.   CRYSTAL GROWTH & DESIGN

Incorporation of indium into ε-gallium oxide epitaxial thin films grown via mist chemical vapour deposition for bandgap engineering

(2018) H. Nishinaka et al.   CRYSTENGCOMM

A power device material of corundum-structured α-Ga2O3 fabricated by MIST EPITAXY® technique

(2018) Kentaro Kaneko et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

ε-Ga 2 O 3 epilayers as a material for solar-blind UV photodetectors

(2018) M. Pavesi et al.   MATERIALS CHEMISTRY AND PHYSICS

Control of Crystal Structure of Ga2 O3 on Sapphire Substrate by Introduction of α-(Al x Ga1−x )2 O3 Buffer Layer

(2018) Riena Jinno et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

A review of Ga2O3 materials, processing, and devices

(2018) S. J. Pearton et al.   Applied Physics Reviews

First-principles study of crystal structure, elastic stiffness constants, piezoelectric constants, and spontaneous polarization of orthorhombic Pna21-M2O3 (M = Al, Ga, In, Sc, Y)

(2018) Kazuhiro Shimada   Materials Research Express

Growth and characterization of α-, β-, and ϵ-phases of Ga2O3 using MOCVD and HVPE techniques

(2018) Yao Yao et al.   Materials Research Letters

Stoichiometric control for heteroepitaxial growth of smooth ε-Ga2O3 thin films on c-plane AlN templates by mist chemical vapor deposition

(2017) Daisuke Tahara et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Metal-Exchange Catalysis in the Growth of Sesquioxides: Towards Heterostructures of Transparent Oxide Semiconductors

(2017) Patrick Vogt et al.   PHYSICAL REVIEW LETTERS

Tin-Assisted Synthesis of ε−Ga2O3 by Molecular Beam Epitaxy

(2017) M. Kracht et al.   Physical Review Applied

Group-III Sesquioxides: Growth, Physical Properties and Devices

(2017) Holger von Wenckstern   Advanced Electronic Materials

Phase diagram and polarization of stable phases of (Ga1−xInx)2O3

(2016) Maria Barbara Maccioni et al.   Applied Physics Express

Hexagonal phase-pure wide band gap ε-Ga2O3 films grown on 6H-SiC substrates by metal organic chemical vapor deposition

(2016) Xiaochuan Xia et al.   APPLIED PHYSICS LETTERS

Reaction kinetics and growth window for plasma-assisted molecular beam epitaxy of Ga2O3: Incorporation of Ga vs. Ga2O desorption

(2016) Patrick Vogt et al.   APPLIED PHYSICS LETTERS

Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire

(2016) Francesco Mezzadri et al.   INORGANIC CHEMISTRY

Heteroepitaxial growth of ε-Ga2O3thin films on cubic (111) MgO and (111) yttria-stablized zirconia substrates by mist chemical vapor deposition

(2016) Hiroyuki Nishinaka et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Homoepitaxial growth of beta gallium oxide films by mist chemical vapor deposition

(2016) Sam-dong Lee et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices

(2016) Shizuo Fujita et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Hetero-epitaxy of ε-Ga 2 O 3 layers by MOCVD and ALD

(2016) F. Boschi et al.   JOURNAL OF CRYSTAL GROWTH

Characterization of hexagonal ɛ-Ga1.8Sn0.2O3 thin films for solar-blind ultraviolet applications

(2016) Xiaolong Zhao et al.   OPTICAL MATERIALS

Recent progress in Ga2O3power devices

(2016) Masataka Higashiwaki et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

β-(AlxGa1−x)2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma-assisted molecular beam epitaxy

(2015) Stephen W. Kaun et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Effect of indium as a surfactant in (Ga1−xInx)2O3epitaxial growth onβ-Ga2O3by metal organic vapour phase epitaxy

(2015) M Baldini et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Epitaxial growth of gallium oxide films on c-cut sapphire substrate

(2015) W. Seiler et al.   THIN SOLID FILMS

Layer-by-layer growth of TiN by pulsed laser deposition onin-situannealed (100) MgO substrates

(2014) Michael Bonholzer et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Structures of Uncharacterised Polymorphs of Gallium Oxide from Total Neutron Diffraction

(2013) Helen Y. Playford et al.   CHEMISTRY-A EUROPEAN JOURNAL

Structural and optical properties of Ga2O3 films on sapphire substrates by pulsed laser deposition

(2013) F.B. Zhang et al.   JOURNAL OF CRYSTAL GROWTH

Control of the conductivity of Si-doped β-Ga2O3thin films via growth temperature and pressure

(2013) Stefan Müller et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

VESTA 3for three-dimensional visualization of crystal, volumetric and morphology data

(2011) Koichi Momma et al.   JOURNAL OF APPLIED CRYSTALLOGRAPHY