Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 34, Issue 7, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6641/ab1721
Keywords
Ga2O3; Schottky barrier diodes (SBDs); tin oxide (SnOx); oxygen partial pressures
Categories
Funding
- National Key Research and Development Program of China [2016YFB0406502, 2016YFA0301200, 2016YFA0201800]
- Engineering and Physical Sciences Research Council (EPSRC) [EP/N021258/1]
- Natural Science Foundation of China [61504044]
- Natural Science Foundation of Shandong Province [ZR2018MF029, ZR201709260014]
- Key Research and Development Program of Shandong Province [2017GGX10111, 2017GGX10121, 2018GGX101027]
- China Postdoctoral Science Foundation [2016M590634]
- Fundamental Research Funds of Shandong University [2018JC037, 2018WLJH87, 2017TB0021, 2016WLJH44, 2015WLJH36]
- EPSRC [EP/N021258/1] Funding Source: UKRI
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High performance Ga2O3 Schottky barrier diodes (SBDs) are achieved by adjusting chemical composition of SnOx Schottky electrode. The SnOx is produced by radio frequency sputtering under various oxygen partial pressures (P-o). A synergic study on Raman, x-ray photoelectron, and optical transmission spectroscopy of the SnOx films illustrates that: the films with P-o = 0 similar to 3.1% consist mainly SnO and Sn with high conductivity; the films with P-o = 4.6 similar to 5.4% are composed of both p-type SnO and n-type SnO2 with high resistance; the films with P-o = 10.0 similar to 13.1% are mainly dominated by n-type SnO2 with low resistivity. In addition, as P-o increased from 0 to 3.1%, the SBDs performances are significantly improved due to that the SnO-dominated films reduce effectively the oxygen-deficiency at the Ga2O3 interfaces and the related interface state density. With P-o = 5.4%, the high resistive SnOx results in degraded diode performance because that the SnO2 component with oxygen vacancy defects may aggravate the oxygen-deficiency at the Schottky interface. With the optimized P-o of 3.1%, the SBD shows high performance with a large barrier height of 1.12 eV, a near unity ideality factor of 1.22, and a high rectification ratio of >10(1)(0).
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