Electron effective mass in Sn-doped monoclinic single crystal β-gallium oxide determined by mid-infrared optical Hall effect

Fundamental limits on the electron mobility ofβ-Ga2O3

(2017) Youngho Kang et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Electron channel mobility in silicon-doped Ga2O3MOSFETs with a resistive buffer layer

(2016) Man Hoi Wong et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Optical Hall effect—model description: tutorial

(2016) Mathias Schubert et al.   JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION

Analysis of the scattering mechanisms controlling electron mobility inβ-Ga2O3crystals

(2016) Antonella Parisini et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Recent progress in Ga2O3power devices

(2016) Masataka Higashiwaki et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Brillouin zone and band structure of β-Ga2O3

(2015) Hartwin Peelaers et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Dielectric tensor of monoclinic Ga2O3 single crystals in the spectral range 0.5–8.5 eV

(2015) C. Sturm et al.   APL Materials

Invited Article: An integrated mid-infrared, far-infrared, and terahertz optical Hall effect instrument

(2014) P. Kühne et al.   REVIEW OF SCIENTIFIC INSTRUMENTS

Tuning the energy band-gap of crystalline gallium oxide to enhance photocatalytic water splitting: mixed-phase junctions

(2014) Ming-Gang Ju et al.   Journal of Materials Chemistry A

Czochralski-Based Growth and Characteristics of Selected Novel Single Crystals for Optical Applications

(2013) K. Shimamura et al.   ACTA PHYSICA POLONICA A

Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect

(2013) S. Schöche et al.   APPLIED PHYSICS LETTERS

Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

(2012) Kohei Sasaki et al.   Applied Physics Express

Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method

(2011) K. Irmscher et al.   JOURNAL OF APPLIED PHYSICS

Oxygen vacancies and donor impurities in β-Ga2O3

(2010) J. B. Varley et al.   APPLIED PHYSICS LETTERS

Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping

(2008) Encarnación G. Víllora et al.   APPLIED PHYSICS LETTERS

Growth of β-Ga2O3Single Crystals by the Edge-Defined, Film Fed Growth Method

(2008) Hideo Aida et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Optical Hall Effect in Hexagonal InN

(2008) T. Hofmann et al.   JOURNAL OF ELECTRONIC MATERIALS