Journal
MATERIALS LETTERS
Volume 164, Issue -, Pages 364-367Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2015.11.001
Keywords
Corundum-structured; alpha-Ga2O3 thin films; Epitaxial growth; Solar-blind photodetector
Funding
- National Natural Science Foundation of China [51572033, 61274017, 51172208, 11404029]
- Beijing University of Posts and Telecommunications (BUFF) Excellent Ph.D. Students Foundation [CX2015304]
- Beijing Natural Science Foundation [2154055]
- China Postdoctoral Science Foundation [2014M550661]
- Fundamental Research Funds for the Central Universities [2014RC0906]
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Corundum-structured alpha-Ga2O3 thin films have been employed to deposit on m-plane (300) alpha-Al2O3 substrates under different temperature, oxygen pressure, pulse laser energy and frequency by laser molecular beam epitaxy method. (300)-oriented alpha-Ga2O3 epitaxial thin film can be obtained under the appropriate growth parameters. The prepared alpha-Ga2O3 thin film shows a band gap of 5.15 eV which is larger than that of beta-Ga2O3, exhibiting an excellent solar-blind ultraviolet (UV) characteristic. The alpha-Ga2O3 thin film exhibits obvious photoresponse under 254 nm UV light irradiation, and it increases in photocurrent with both the increase of optical input power and applied bias. However, it is not sensitive to 365 nm light. The results suggest that alpha-Ga2O3 thin film is a promising candidate for use in solar-blind photodetectors. (C) 2015 Elsevier B.V. All rights reserved.
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