Transistors based on two-dimensional materials for future integrated circuits

High Current Density in Monolayer MoS2 Doped by AlOx

(2021) Connor J. McClellan et al.   ACS Nano

Satisfiability Attack-Resistant Camouflaged Two-Dimensional Heterostructure Devices

(2021) Akshay Wali et al.   ACS Nano

High On-State Current in Chemical Vapor Deposited Monolayer MoS2 nFETs With Sn Ohmic Contacts

(2021) Ang-Sheng Chou et al.   IEEE ELECTRON DEVICE LETTERS

Promises and prospects of two-dimensional transistors

(2021) Yuan Liu et al.   NATURE

Benchmarking monolayer MoS2 and WS2 field-effect transistors

(2021) Amritanand Sebastian et al.   Nature Communications

Large-area integration of two-dimensional materials and their heterostructures by wafer bonding

(2021) Arne Quellmalz et al.   Nature Communications

The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials

(2021) Theresia Knobloch et al.   Nature Electronics

Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers

(2021) Daniil Marinov et al.   npj 2D Materials and Applications

Ultralow contact resistance between semimetal and monolayer semiconductors

(2021) Pin-Chun Shen et al.   NATURE

Impact of device scaling on the electrical properties of MoS2 field-effect transistors

(2021) Goutham Arutchelvan et al.   Scientific Reports

Graphene-based physically unclonable functions that are reconfigurable and resilient to machine learning attacks

(2021) Akhil Dodda et al.   Nature Electronics

High-performance flexible nanoscale transistors based on transition metal dichalcogenides

(2021) Alwin Daus et al.   Nature Electronics

Realizing Omega-Shaped Gate MoS2 Field-Effect Transistor Based on SiO2/MoS2 Core-Shell Heterostructure

(2020) Dong-Hui Zhao et al.   ACS Applied Materials & Interfaces

The search for the most conductive metal for narrow interconnect lines

(2020) Daniel Gall   JOURNAL OF APPLIED PHYSICS

Ultrafast machine vision with 2D material neural network image sensors

(2020) Lukas Mennel et al.   NATURE

Recent Progress in Chemiresistive Gas Sensing Technology Based on Molybdenum and Tungsten Chalcogenide Nanostructures

(2020) Ravindra Kumar Jha et al.   Advanced Materials Interfaces

Transient hot-carrier dynamics and intrinsic velocity saturation in monolayer MoS2

(2020) J. Nathawat et al.   Physical Review Materials

Large temperature coefficient of resistance in atomically thin two-dimensional semiconductors

(2020) Asir Intisar Khan et al.   APPLIED PHYSICS LETTERS

Insulators for 2D nanoelectronics: the gap to bridge

(2020) Yury Yu. Illarionov et al.   Nature Communications

MoS2-based ferroelectric field-effect transistor with atomic layer deposited Hf0.5Zr0.5O2 films toward memory applications

(2020) Ming-Yang Cha et al.   AIP Advances

Reduced Thermal Conductivity of Supported and Encased Monolayer and Bilayer MoS2

(2020) Alexander Joseph Gabourie et al.   2D Materials

Full-color active-matrix organic light-emitting diode display on human skin based on a large-area MoS2 backplane

(2020) Minwoo Choi et al.   Science Advances

A native oxide high-κ gate dielectric for two-dimensional electronics

(2020) Tianran Li et al.   Nature Electronics

Thickness Trends of Electron and Hole Conduction and Contact Carrier Injection in Surface Charge Transfer Doped 2D Field Effect Transistors

(2020) Andrew J. Arnold et al.   ACS Nano

Rapid Four-Point Sweeping Method to Investigate Hysteresis of MoS2 FET

(2020) Chen Li et al.   IEEE ELECTRON DEVICE LETTERS

Energy-Efficient Monolithic 3-D SRAM Cell With BEOL MoS2 FETs for SoC Scaling

(2020) Vita Pi-Ho Hu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Opportunities and challenges of 2D materials in back-end-of-line interconnect scaling

(2020) Chun-Li Lo et al.   JOURNAL OF APPLIED PHYSICS

Stochastic resonance in MoS2 photodetector

(2020) Akhil Dodda et al.   Nature Communications

2D Semiconductor Transistors with Van der Waals Oxide MoO 3 as Integrated High‐κ Gate Dielectric

(2020) Brian A. Holler et al.   Advanced Electronic Materials

Analogue two-dimensional semiconductor electronics

(2020) Dmitry K. Polyushkin et al.   Nature Electronics

A low-power biomimetic collision detector based on an in-memory molybdenum disulfide photodetector

(2020) Darsith Jayachandran et al.   Nature Electronics

Ways to eliminate PMMA residues on graphene —— superclean graphene

(2020) Bozhong Zhuang et al.   CARBON

Seamless Fabrication and Threshold Engineering in Monolayer MoS2 Dual-Gated Transistors via Hydrogen Silsesquioxane

(2019) Joseph R. Nasr et al.   Advanced Electronic Materials

MoS2-Based Optoelectronic Gas Sensor with Sub-parts-per-billion Limit of NO2 Gas Detection

(2019) Tung Pham et al.   ACS Nano

A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐ k , and Layered Dielectrics

(2019) Felix Palumbo et al.   ADVANCED FUNCTIONAL MATERIALS

Carbon doping of WS2 monolayers: Bandgap reduction and p-type doping transport

(2019) Fu Zhang et al.   Science Advances

MoS2 for Enhanced Electrical Performance of Ultrathin Copper Films

(2019) Tingting Shen et al.   ACS Applied Materials & Interfaces

Accurate Threshold Voltage Reliability Evaluation of Thin Al2O3 Top-Gated Dielectric Black Phosphorous FETs Using Ultrafast Measurement Pulses

(2019) Natasha Goyal et al.   ACS Applied Materials & Interfaces

Enhancing Interconnect Reliability and Performance by Converting Tantalum to 2D Layered Tantalum Sulfide at Low Temperature

(2019) Chun‐Li Lo et al.   ADVANCED MATERIALS

Devices and Circuits Using Novel 2-D Materials: A Perspective for Future VLSI Systems

(2019) Giovanni V. Resta et al.   IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS

Immunity to Contact Scaling in MoS2 Transistors Using in Situ Edge Contacts

(2019) Zhihui Cheng et al.   NANO LETTERS

Approaching the Intrinsic Limit in Transition Metal Diselenides via Point Defect Control

(2019) Drew Edelberg et al.   NANO LETTERS

Graphene and two-dimensional materials for silicon technology

(2019) Deji Akinwande et al.   NATURE

Thermal boundary conductance of two-dimensional MoS2 interfaces

(2019) Saurabh V. Suryavanshi et al.   JOURNAL OF APPLIED PHYSICS

Gaussian synapses for probabilistic neural networks

(2019) Amritanand Sebastian et al.   Nature Communications

All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration

(2019) Maheswari Sivan et al.   Nature Communications

Ultra-scaled MoS2 transistors and circuits fabricated without nanolithography

(2019) Kishan Ashokbhai Patel et al.   2D Materials

Scalable BEOL compatible 2D tungsten diselenide

(2019) Azimkhan Kozhakhmetov et al.   2D Materials

Direct n- to p-Type Channel Conversion in Monolayer/Few-Layer WS2 Field-Effect Transistors by Atomic Nitrogen Treatment

(2018) Baoshan Tang et al.   ACS Nano

Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors

(2018) Bernhard Stampfer et al.   ACS Nano

Tuning the Electronic and Photonic Properties of Monolayer MoS2 via In Situ Rhenium Substitutional Doping

(2018) Kehao Zhang et al.   ADVANCED FUNCTIONAL MATERIALS

Contact engineering for 2D materials and devices

(2018) Daniel S. Schulman et al.   CHEMICAL SOCIETY REVIEWS

Large-Area, Single-Layer Molybdenum Disulfide Synthesized at BEOL Compatible Temperature as Cu Diffusion Barrier

(2018) Chun-Li Lo et al.   IEEE ELECTRON DEVICE LETTERS

Modeling of Short-Channel Effects in DG MOSFETs: Green's Function Method Versus Scale Length Model

(2018) Nilesh Pandey et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High-Field Transport and Velocity Saturation in Synthetic Monolayer MoS2

(2018) Kirby K. H. Smithe et al.   NANO LETTERS

Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS2 flake based field effect transistors on SiO2 and hBN substrates

(2018) Changhee Lee et al.   NANOTECHNOLOGY

Quantum engineering of transistors based on 2D materials heterostructures

(2018) Giuseppe Iannaccone et al.   Nature Nanotechnology

Near-zero hysteresis and near-ideal subthreshold swing in h-BN encapsulated single-layer MoS2 field-effect transistors

(2018) Quoc An Vu et al.   2D Materials

Coplanar Multigate MoS2 Electric-Double-Layer Transistors for Neuromorphic Visual Recognition

(2018) Dingdong Xie et al.   ACS Applied Materials & Interfaces

Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide

(2018) Vinod K. Sangwan et al.   NATURE

Doping engineering and functionalization of two-dimensional metal chalcogenides

(2018) Peng Luo et al.   Nanoscale Horizons

Mobility Deception in Nanoscale Transistors: An Untold Contact Story

(2018) Joseph R. Nasr et al.   ADVANCED MATERIALS

Electric-field induced structural transition in vertical MoTe2- and Mo1–xWxTe2-based resistive memories

(2018) Feng Zhang et al.   NATURE MATERIALS

Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials

(2018) Jaewoo Shim et al.   SCIENCE

High-Performance Wafer-Scale MoS2 Transistors toward Practical Application

(2018) Hu Xu et al.   Small

Reduction of hysteresis in MoS2 transistors using pulsed voltage measurements

(2018) Isha M Datye et al.   2D Materials

Improved Hysteresis and Reliability of MoS2 Transistors With High-Quality CVD Growth and Al2O3 Encapsulation

(2017) Yury Yu. Illarionov et al.   IEEE ELECTRON DEVICE LETTERS

Rapid Flame Synthesis of Atomically Thin MoO3 down to Monolayer Thickness for Effective Hole Doping of WSe2

(2017) Lili Cai et al.   NANO LETTERS

Energy Dissipation in Monolayer MoS2 Electronics

(2017) Eilam Yalon et al.   NANO LETTERS

Low-Temperature Ohmic Contact to Monolayer MoS2 by van der Waals Bonded Co/h-BN Electrodes

(2017) Xu Cui et al.   NANO LETTERS

Etchant-free transfer of 2D nanostructures

(2017) Fu Zhang et al.   NANOTECHNOLOGY

A microprocessor based on a two-dimensional semiconductor

(2017) Stefan Wachter et al.   Nature Communications

Gas sensing in 2D materials

(2017) Shengxue Yang et al.   Applied Physics Reviews

Graphene and Related Materials for Resistive Random Access Memories

(2017) Fei Hui et al.   Advanced Electronic Materials

2D transition metal dichalcogenides

(2017) Sajedeh Manzeli et al.   Nature Reviews Materials

HfSe 2 and ZrSe 2 : Two-dimensional semiconductors with native high-κ oxides

(2017) Michal J. Mleczko et al.   Science Advances

Interactions between copper and transition metal dichalcogenides: A density functional theory study

(2017) Benjamin A. Helfrecht et al.   PHYSICAL REVIEW MATERIALS

Dynamic Memory Cells Using MoS2 Field-Effect Transistors Demonstrating Femtoampere Leakage Currents

(2016) Chaitanya U. Kshirsagar et al.   ACS Nano

Monolithic 3D CMOS Using Layered Semiconductors

(2016) Angada B. Sachid et al.   ADVANCED MATERIALS

Chemically exfoliated transition metal dichalcogenide nanosheet-based wearable thermoelectric generators

(2016) Jin Young Oh et al.   Energy & Environmental Science

Positive charge trapping phenomenon in n-channel thin-film transistors with amorphous alumina gate insulators

(2016) Alwin Daus et al.   JOURNAL OF APPLIED PHYSICS

S2DS: Physics-based compact model for circuit simulation of two-dimensional semiconductor devices including non-idealities

(2016) Saurabh V. Suryavanshi et al.   JOURNAL OF APPLIED PHYSICS

On the use of two dimensional hexagonal boron nitride as dielectric

(2016) Fei Hui et al.   MICROELECTRONIC ENGINEERING

Design, Modeling, and Fabrication of Chemical Vapor Deposition Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics

(2016) Lili Yu et al.   NANO LETTERS

Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition

(2016) Chris D. English et al.   NANO LETTERS

Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts

(2016) Mahito Yamamoto et al.   NANO LETTERS

MoS2 Field-Effect Transistor with Sub-10 nm Channel Length

(2016) Amirhasan Nourbakhsh et al.   NANO LETTERS

The role of charge trapping in MoS2/SiO2and MoS2/hBN field-effect transistors

(2016) Yury Yu Illarionov et al.   2D Materials

Intrinsic electrical transport and performance projections of synthetic monolayer MoS2devices

(2016) Kirby K H Smithe et al.   2D Materials

Two-dimensional semiconductors for transistors

(2016) Manish Chhowalla et al.   Nature Reviews Materials

Origins and Characteristics of the Threshold Voltage Variability of Quasiballistic Single-Walled Carbon Nanotube Field-Effect Transistors

(2015) Qing Cao et al.   ACS Nano

Large-Area Epitaxial Monolayer MoS2

(2015) Dumitru Dumcenco et al.   ACS Nano

Materials for Flexible, Stretchable Electronics: Graphene and 2D Materials

(2015) Sang Jin Kim et al.   Annual Review of Materials Research

Improved high temperature integration of Al2O3 on MoS2 by using a metal oxide buffer layer

(2015) Seokki Son et al.   APPLIED PHYSICS LETTERS

Observation of reduced 1/f noise in graphene field effect transistors on boron nitride substrates

(2015) Morteza Kayyalha et al.   APPLIED PHYSICS LETTERS

Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences

(2015) Yury Illarionov et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

2D Semiconductor FETs—Projections and Design for Sub-10 nm VLSI

(2015) Wei Cao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Strain-Induced Modulation of Electron Mobility in Single-Layer Transition Metal Dichalcogenides MX2 ( $M = {\rm Mo}$ , W; $X = {\rm S}$ , Se)

(2015) Manouchehr Hosseini et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation

(2015) Amritesh Rai et al.   NANO LETTERS

Enhanced Electrical and Thermal Conduction in Graphene-Encapsulated Copper Nanowires

(2015) Ruchit Mehta et al.   NANO LETTERS

Two-dimensional materials and their prospects in transistor electronics

(2015) F. Schwierz et al.   Nanoscale

High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity

(2015) Kibum Kang et al.   NATURE

Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform

(2015) Xu Cui et al.   Nature Nanotechnology

The Integration of Sub-10 nm Gate Oxide on MoS2 with Ultra Low Leakage and Enhanced Mobility

(2015) Wen Yang et al.   Scientific Reports

HfO2on UV–O3exposed transition metal dichalcogenides: interfacial reactions study

(2015) Angelica Azcatl et al.   2D Materials

Defect-Dominated Doping and Contact Resistance in MoS2

(2014) Stephen McDonnell et al.   ACS Nano

Layer-by-Layer Dielectric Breakdown of Hexagonal Boron Nitride

(2014) Yoshiaki Hattori et al.   ACS Nano

Field-Effect Transistors Built from All Two-Dimensional Material Components

(2014) Tania Roy et al.   ACS Nano

MoS2 Field-Effect Transistor for Next-Generation Label-Free Biosensors

(2014) Deblina Sarkar et al.   ACS Nano

Interface Engineering for High-Performance Top-Gated MoS2Field-Effect Transistors

(2014) Xuming Zou et al.   ADVANCED MATERIALS

Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process

(2014) A. Nath et al.   APPLIED PHYSICS LETTERS

MoS2 functionalization for ultra-thin atomic layer deposited dielectrics

(2014) Angelica Azcatl et al.   APPLIED PHYSICS LETTERS

All Two-Dimensional, Flexible, Transparent, and Thinnest Thin Film Transistor

(2014) Saptarshi Das et al.   NANO LETTERS

Doping against the Native Propensity of MoS2: Degenerate Hole Doping by Cation Substitution

(2014) Joonki Suh et al.   NANO LETTERS

Tailoring the Physical Properties of Molybdenum Disulfide Monolayers by Control of Interfacial Chemistry

(2014) Sina Najmaei et al.   NANO LETTERS

Phase-engineered low-resistance contacts for ultrathin MoS2 transistors

(2014) Rajesh Kappera et al.   NATURE MATERIALS

Electrical stability of multilayer MoS2field-effect transistor under negative bias stress at various temperatures

(2014) Suk Yang et al.   Physica Status Solidi-Rapid Research Letters

Charge Scattering and Mobility in Atomically Thin Semiconductors

(2014) Nan Ma et al.   Physical Review X

Multi-Layer MoS2 FET with Small Hysteresis by Using Atomic Layer Deposition Al2O3 as Gate Insulator

(2014) A.-J. Cho et al.   ECS Solid State Letters

Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density

(2014) Kevin Chen et al.   APL Materials

Near-field microwave microscopy of high-κ oxides grown on graphene with an organic seeding layer

(2013) Alexander Tselev et al.   APPLIED PHYSICS LETTERS

Role of Joule Heating on Current Saturation and Transient Behavior of Graphene Transistors

(2013) Sharnali Islam et al.   IEEE ELECTRON DEVICE LETTERS

Total Dose Irradiation-Induced Degradation of Hysteresis Effect in Partially Depleted Silicon-on-Insulator NMOSFETs

(2013) Huixiang Huang et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Carbon Nanotube Complementary Wrap-Gate Transistors

(2013) Aaron D. Franklin et al.   NANO LETTERS

Low-frequency noise in multilayer MoS2field-effect transistors: the effect of high-k passivation

(2013) Junhong Na et al.   Nanoscale

Possible doping strategies for MoS2monolayers: Anab initiostudy

(2013) Kapildeb Dolui et al.   PHYSICAL REVIEW B

Hysteresis in Single-Layer MoS2 Field Effect Transistors

(2012) Dattatray J. Late et al.   ACS Nano

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

Phonon-limited mobility inn-type single-layer MoS2from first principles

(2012) Kristen Kaasbjerg et al.   PHYSICAL REVIEW B

Ultra-thin and Flat Mica as Gate Dielectric Layers

(2012) Chong Guan Low et al.   Small

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene

(2009) Wenjuan Zhu et al.   PHYSICAL REVIEW B

Intrinsic and extrinsic performance limits of graphene devices on SiO2

(2008) Jian-Hao Chen et al.   Nature Nanotechnology