Multi-Layer MoS2 FET with Small Hysteresis by Using Atomic Layer Deposition Al2O3 as Gate Insulator

Published 2014 View Full Article

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Title
Multi-Layer MoS2 FET with Small Hysteresis by Using Atomic Layer Deposition Al2O3 as Gate Insulator
Authors
Keywords
-
Journal
ECS Solid State Letters
Volume 3, Issue 10, Pages Q67-Q69
Publisher
The Electrochemical Society
Online
2014-08-15
DOI
10.1149/2.0111409ssl

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