Dynamic Memory Cells Using MoS2 Field-Effect Transistors Demonstrating Femtoampere Leakage Currents

Published 2016 View Full Article

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Title
Dynamic Memory Cells Using MoS2 Field-Effect Transistors Demonstrating Femtoampere Leakage Currents
Authors
Keywords
-
Journal
ACS Nano
Volume 10, Issue 9, Pages 8457-8464
Publisher
American Chemical Society (ACS)
Online
2016-08-26
DOI
10.1021/acsnano.6b03440

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