Improved Hysteresis and Reliability of MoS2 Transistors With High-Quality CVD Growth and Al2O3 Encapsulation

Published 2017 View Full Article

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Title
Improved Hysteresis and Reliability of MoS2 Transistors With High-Quality CVD Growth and Al2O3 Encapsulation
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 38, Issue 12, Pages 1763-1766
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2017-11-02
DOI
10.1109/led.2017.2768602

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