Ultra-scaled MoS2 transistors and circuits fabricated without nanolithography

High-Field Transport and Velocity Saturation in Synthetic Monolayer MoS2

(2018) Kirby K. H. Smithe et al.   NANO LETTERS

Improved Hysteresis and Reliability of MoS2 Transistors With High-Quality CVD Growth and Al2O3 Encapsulation

(2017) Yury Yu. Illarionov et al.   IEEE ELECTRON DEVICE LETTERS

CMOS Scaling Trends and Beyond

(2017) Mark T. Bohr et al.   IEEE MICRO

Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors

(2017) Kai Xu et al.   NANO LETTERS

A microprocessor based on a two-dimensional semiconductor

(2017) Stefan Wachter et al.   Nature Communications

High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide

(2017) Erica Guerriero et al.   Scientific Reports

Gold-Mediated Exfoliation of Ultralarge Optoelectronically-Perfect Monolayers

(2016) Sujay B. Desai et al.   ADVANCED MATERIALS

Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors

(2016) Yuan Liu et al.   NANO LETTERS

Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition

(2016) Chris D. English et al.   NANO LETTERS

MoS2 Field-Effect Transistor with Sub-10 nm Channel Length

(2016) Amirhasan Nourbakhsh et al.   NANO LETTERS

MoS2 transistors with 1-nanometer gate lengths

(2016) S. B. Desai et al.   SCIENCE

Ultrashort Channel Length Black Phosphorus Field-Effect Transistors

(2015) Jinshui Miao et al.   ACS Nano

Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors

(2015) Yao Guo et al.   APPLIED PHYSICS LETTERS

2D Semiconductor FETs—Projections and Design for Sub-10 nm VLSI

(2015) Wei Cao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Electrical performance of multilayer MoS2 transistors on high-κ Al2O3 coated Si substrates

(2015) Tao Li et al.   AIP Advances

Exfoliation of large-area transition metal chalcogenide single layers

(2015) Gábor Zsolt Magda et al.   Scientific Reports

Low Resistance Metal Contacts to MoS2 Devices with Nickel-Etched-Graphene Electrodes

(2014) Wei Sun Leong et al.   ACS Nano

Gigahertz Integrated Graphene Ring Oscillators

(2013) Erica Guerriero et al.   ACS Nano

On Monolayer ${\rm MoS}_{2}$ Field-Effect Transistors at the Scaling Limit

(2013) Leitao Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Channel Length Scaling of MoS2 MOSFETs

(2012) Han Liu et al.   ACS Nano

Breakdown of High-Performance Monolayer MoS2 Transistors

(2012) Dominik Lembke et al.   ACS Nano

Hysteresis in Single-Layer MoS2 Field Effect Transistors

(2012) Dattatray J. Late et al.   ACS Nano

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Graphene Audio Voltage Amplifier

(2011) Erica Guerriero et al.   Small

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Vertical arrays of nanofluidic channels fabricated without nanolithography

(2009) Roman Sordan et al.   LAB ON A CHIP