All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration
Published 2019 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration
Authors
Keywords
-
Journal
Nature Communications
Volume 10, Issue 1, Pages -
Publisher
Springer Science and Business Media LLC
Online
2019-11-15
DOI
10.1038/s41467-019-13176-4
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Quantum engineering of transistors based on 2D materials heterostructures
- (2018) Giuseppe Iannaccone et al. Nature Nanotechnology
- Electric-field induced structural transition in vertical MoTe2- and Mo1–xWxTe2-based resistive memories
- (2018) Feng Zhang et al. NATURE MATERIALS
- Device and Circuit Interaction Analysis of Stochastic Behaviors in Cross-Point RRAM Arrays
- (2017) Haitong Li et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides
- (2017) Ruijing Ge et al. NANO LETTERS
- High-performance multilayer WSe2 field-effect transistors with carrier type control
- (2017) Pushpa Raj Pudasaini et al. Nano Research
- Scalable exfoliation and dispersion of two-dimensional materials – an update
- (2017) Hengcong Tao et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer
- (2017) Xiaolong Zhao et al. Small
- Highly improved performance in Zr0.5Hf0.5O2 films inserted with graphene oxide quantum dots layer for resistive switching non-volatile memory
- (2017) Xiaobing Yan et al. Journal of Materials Chemistry C
- High-Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions
- (2016) Bilu Liu et al. ACS Nano
- Layer Control of WSe2 via Selective Surface Layer Oxidation
- (2016) Zhen Li et al. ACS Nano
- Hexagonal Boron Nitride Thin Film for Flexible Resistive Memory Applications
- (2016) Kai Qian et al. ADVANCED FUNCTIONAL MATERIALS
- Liquid-Exfoliated Black Phosphorous Nanosheet Thin Films for Flexible Resistive Random Access Memory Applications
- (2016) Chunxue Hao et al. ADVANCED FUNCTIONAL MATERIALS
- Colloidal Synthesis of Uniform-Sized Molybdenum Disulfide Nanosheets for Wafer-Scale Flexible Nonvolatile Memory
- (2016) Donghee Son et al. ADVANCED MATERIALS
- Reconfigurable Nonvolatile Logic Operations in Resistance Switching Crossbar Array for Large-Scale Circuits
- (2016) Peng Huang et al. ADVANCED MATERIALS
- Ultra-Low Switching Voltage Induced by Inserting SiO2Layer in Indium–Tin–Oxide-Based Resistance Random Access Memory
- (2016) Chih-Cheng Shih et al. IEEE ELECTRON DEVICE LETTERS
- SPICE Compact Modeling of Bipolar/Unipolar Memristor Switching Governed by Electrical Thresholds
- (2016) Fernando Garcia-Redondo et al. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
- Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors
- (2016) Hsun-Jen Chuang et al. NANO LETTERS
- Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts
- (2016) Mahito Yamamoto et al. NANO LETTERS
- Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays
- (2016) Qing Luo et al. Nanoscale
- Realization of Minimum and Maximum Gate Function in Ta2O5-based Memristive Devices
- (2016) Thomas Breuer et al. Scientific Reports
- Polarity control in WSe2 double-gate transistors
- (2016) Giovanni V. Resta et al. Scientific Reports
- High-Performance, Air-Stable, Top-Gate, p-Channel WSe2Field-Effect Transistor with Fluoropolymer Buffer Layer
- (2015) Seyed Hossein Hosseini Shokouh et al. ADVANCED FUNCTIONAL MATERIALS
- Non-volatile resistive memory devices based on solution-processed ultrathin two-dimensional nanomaterials
- (2015) Chaoliang Tan et al. CHEMICAL SOCIETY REVIEWS
- Impact of Post-Oxide Deposition Annealing on Resistive Switching in HfO2-Based Oxide RRAM and Conductive-Bridge RAM Devices
- (2015) Tsung-Ling Tsai et al. IEEE ELECTRON DEVICE LETTERS
- Compact One-Transistor-N-RRAM Array Architecture for Advanced CMOS Technology
- (2015) Chih-Wei Stanley Yeh et al. IEEE JOURNAL OF SOLID-STATE CIRCUITS
- 2D Semiconductor FETs—Projections and Design for Sub-10 nm VLSI
- (2015) Wei Cao et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Compact Modeling of RRAM Devices and Its Applications in 1T1R and 1S1R Array Design
- (2015) Pai-Yu Chen et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Statistical Study on the Schottky Barrier Reduction of Tunneling Contacts to CVD Synthesized MoS2
- (2015) Seunghyun Lee et al. NANO LETTERS
- Thermal Oxidation of WSe2 Nanosheets Adhered on SiO2/Si Substrates
- (2015) Yingnan Liu et al. NANO LETTERS
- Self-Limiting Layer-by-Layer Oxidation of Atomically Thin WSe2
- (2015) Mahito Yamamoto et al. NANO LETTERS
- Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets
- (2015) Peifu Cheng et al. NANO LETTERS
- Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2
- (2015) Vinod K. Sangwan et al. Nature Nanotechnology
- Metal oxide-resistive memory using graphene-edge electrodes
- (2015) Seunghyun Lee et al. Nature Communications
- Hall and field-effect mobilities in few layered p-WSe2 field-effect transistors
- (2015) N. R. Pradhan et al. Scientific Reports
- Field-Effect Transistors Built from All Two-Dimensional Material Components
- (2014) Tania Roy et al. ACS Nano
- High gain, low noise, fully complementary logic inverter based on bi-layer WSe2 field effect transistors
- (2014) Saptarshi Das et al. APPLIED PHYSICS LETTERS
- Benchmarking Transition Metal Dichalcogenide MOSFET in the Ultimate Physical Scaling Limit
- (2014) Kausik Majumdar et al. IEEE ELECTRON DEVICE LETTERS
- Crossbar RRAM Arrays: Selector Device Requirements During Read Operation
- (2014) Jiantao Zhou et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Performance and reliability trade-offs for high-κ RRAM
- (2014) Nagarajan Raghavan MICROELECTRONICS RELIABILITY
- High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
- (2014) Hsun-Jen Chuang et al. NANO LETTERS
- Layered memristive and memcapacitive switches for printable electronics
- (2014) Alexander A. Bessonov et al. NATURE MATERIALS
- Phase-engineered low-resistance contacts for ultrathin MoS2 transistors
- (2014) Rajesh Kappera et al. NATURE MATERIALS
- Two-dimensional flexible nanoelectronics
- (2014) Deji Akinwande et al. Nature Communications
- Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping
- (2014) Andres Castellanos-Gomez et al. 2D Materials
- Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
- (2013) Wei Liu et al. NANO LETTERS
- Transition Metal Oxides for Organic Electronics: Energetics, Device Physics and Applications
- (2012) Jens Meyer et al. ADVANCED MATERIALS
- Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal–oxide–metal memristors
- (2012) Dmitri B. Strukov et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Laser-Thinning of MoS2: On Demand Generation of a Single-Layer Semiconductor
- (2012) A. Castellanos-Gomez et al. NANO LETTERS
- High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
- (2012) Hui Fang et al. NANO LETTERS
- Low Reset Current in Stacked $\hbox{AlO}_{x}/ \hbox{WO}_{x}$ Resistive Switching Memory
- (2011) Y. L. Song et al. IEEE ELECTRON DEVICE LETTERS
- Ultrafast Transfer of Metal-Enhanced Carbon Nanotubes at Low Temperature for Large-Scale Electronics Assembly
- (2010) Yifeng Fu et al. ADVANCED MATERIALS
Add your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload NowBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started