Positive charge trapping phenomenon in n-channel thin-film transistors with amorphous alumina gate insulators

Effect of atomic layer deposition temperature on current conduction in Al2O3 films formed using H2O oxidant

(2016)   JOURNAL OF APPLIED PHYSICS

Space-charge-controlled field emission model of current conduction through Al2O3 films

(2016)   JOURNAL OF APPLIED PHYSICS

How Does Moisture Affect the Physical Property of Memristance for Anionic-Electronic Resistive Switching Memories?

(2015) Felix Messerschmitt et al.   ADVANCED FUNCTIONAL MATERIALS

High-K materials and metal gates for CMOS applications

(2015) John Robertson et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Memristor Kinetics and Diffusion Characteristics for Mixed Anionic-Electronic SrTiO3-δBits: The Memristor-Based Cottrell Analysis Connecting Material to Device Performance

(2014) Felix Messerschmitt et al.   ADVANCED FUNCTIONAL MATERIALS

Optical properties of amorphous Al2O3 thin films prepared by a sol–gel process

(2014) Baofu Hu et al.   CERAMICS INTERNATIONAL

Heat Dissipation in Resistive Switching Devices: Comparison of Thermal Simulations and Experimental Results

(2014) Eilam Yalon et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Leakage current in high dielectric oxides: Role of defect-induced energies

(2013) P. Maleeswaran et al.   JOURNAL OF APPLIED PHYSICS

Native point defects and dangling bonds in α-Al2O3

(2013) Minseok Choi et al.   JOURNAL OF APPLIED PHYSICS

Growth and molarity effects on properties of alumina thin films obtained by spray pyrolysis

(2013) A. Bagheri Khatibani et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

(2012) E. Fortunato et al.   ADVANCED MATERIALS

Flexible Electronics: The Next Ubiquitous Platform

(2012) A. Nathan et al.   PROCEEDINGS OF THE IEEE

A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks

(2011) L. Vandelli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Low-power TiN/Al2O3/Pt resistive switching device with sub-20 μA switching current and gradual resistance modulation

(2011) Yi Wu et al.   JOURNAL OF APPLIED PHYSICS

Reliability of thin ZrO2 gate dielectric layers

(2011) Robert O’Connor et al.   MICROELECTRONICS RELIABILITY

Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

(2011) Isabelle Ferain et al.   NATURE

Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors

(2011) Hyeon-Kyun Noh et al.   PHYSICAL REVIEW B

Oxygen vacancy levels and electron transport in Al2O3

(2010) D. Liu et al.   APPLIED PHYSICS LETTERS

Multiphonon-induced charge trapping-detrapping and damage in insulators

(2010) C. Bonnelle   PHYSICAL REVIEW B

High-kOrganic, Inorganic, and Hybrid Dielectrics for Low-Voltage Organic Field-Effect Transistors

(2009) Rocío Ponce Ortiz et al.   CHEMICAL REVIEWS

Multiphonon mechanism of the ionization of traps in Al2O3: Experiment and numerical simulation

(2009) Yu. N. Novikov et al.   JETP LETTERS

Two-dimensional numerical simulation of radio frequency sputter amorphous In–Ga–Zn–O thin-film transistors

(2009) Tze-Ching Fung et al.   JOURNAL OF APPLIED PHYSICS

The charge transport mechanism in silicon nitride: Multi-phonon trap ionization

(2009) A.V. Vishnyakov et al.   SOLID-STATE ELECTRONICS