Mobility Deception in Nanoscale Transistors: An Untold Contact Story
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Title
Mobility Deception in Nanoscale Transistors: An Untold Contact Story
Authors
Keywords
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Journal
ADVANCED MATERIALS
Volume 31, Issue 2, Pages 1806020
Publisher
Wiley
Online
2018-11-15
DOI
10.1002/adma.201806020
References
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Related references
Note: Only part of the references are listed.- Contact engineering for 2D materials and devices
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- (2018) Vinod K. Sangwan et al. NATURE
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- Surface Defects on Natural MoS2
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- Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets
- (2015) Peifu Cheng et al. NANO LETTERS
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- (2015) Adrien Allain et al. NATURE MATERIALS
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- (2014) Gianluca Fiori et al. Nature Nanotechnology
- Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2
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- Mobility engineering and a metal–insulator transition in monolayer MoS2
- (2013) Branimir Radisavljevic et al. NATURE MATERIALS
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- Sub-10 nm Carbon Nanotube Transistor
- (2012) Aaron D. Franklin et al. NANO LETTERS
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- (2012) Saptarshi Das et al. NANO LETTERS
- Electrical contacts to one- and two-dimensional nanomaterials
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- Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources
- (2010) Zhen Zhang et al. IEEE ELECTRON DEVICE LETTERS
- Effect of Top Dielectric Medium on Gate Capacitance of Graphene Field Effect Transistors: Implications in Mobility Measurements and Sensor Applications
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- Toward Nanowire Electronics
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