Near-zero hysteresis and near-ideal subthreshold swing in h-BN encapsulated single-layer MoS2 field-effect transistors

Published 2018 View Full Article

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Title
Near-zero hysteresis and near-ideal subthreshold swing in h-BN encapsulated single-layer MoS2 field-effect transistors
Authors
Keywords
-
Journal
2D Materials
Volume 5, Issue 3, Pages 031001
Publisher
IOP Publishing
Online
2018-03-14
DOI
10.1088/2053-1583/aab672

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