Charge Scattering and Mobility in Atomically Thin Semiconductors

Remote phonon and impurity screening effect of substrate and gate dielectric on electron dynamics in single layer MoS2

(2013) Lang Zeng et al.   APPLIED PHYSICS LETTERS

Band-like transport in high mobility unencapsulated single-layer MoS2 transistors

(2013) Deep Jariwala et al.   APPLIED PHYSICS LETTERS

Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors

(2013) Song-Lin Li et al.   NANO LETTERS

Mobility engineering and a metal–insulator transition in monolayer MoS2

(2013) Branimir Radisavljevic et al.   NATURE MATERIALS

Mobility enhancement and temperature dependence in top-gated single-layer MoS2

(2013) Zhun-Yong Ong et al.   PHYSICAL REVIEW B

Acoustic phonon limited mobility in two-dimensional semiconductors: Deformation potential and piezoelectric scattering in monolayer MoS2from first principles

(2013) Kristen Kaasbjerg et al.   PHYSICAL REVIEW B

Intrinsic electrical transport properties of monolayer silicene and MoS2from first principles

(2013) Xiaodong Li et al.   PHYSICAL REVIEW B

Intrinsic Piezoelectricity in Two-Dimensional Materials

(2012) Karel-Alexander N. Duerloo et al.   Journal of Physical Chemistry Letters

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

(2012) Hui Fang et al.   NANO LETTERS

Phonon-limited mobility inn-type single-layer MoS2from first principles

(2012) Kristen Kaasbjerg et al.   PHYSICAL REVIEW B

Superconducting Dome in a Gate-Tuned Band Insulator

(2012) J. T. Ye et al.   SCIENCE

Probing charge scattering mechanisms in suspended graphene by varying its dielectric environment

(2012) A.K.M. Newaz et al.   Nature Communications

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

(2012) Sunkook Kim et al.   Nature Communications

Inelastic scattering and current saturation in graphene

(2010) Vasili Perebeinos et al.   PHYSICAL REVIEW B

Effect of high-κgate dielectrics on charge transport in graphene-based field effect transistors

(2010) Aniruddha Konar et al.   PHYSICAL REVIEW B

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Intrinsic and extrinsic performance limits of graphene devices on SiO2

(2008) Jian-Hao Chen et al.   Nature Nanotechnology

Substrate-limited electron dynamics in graphene

(2008) S. Fratini et al.   PHYSICAL REVIEW B