S2DS: Physics-based compact model for circuit simulation of two-dimensional semiconductor devices including non-idealities

High Current Density and Low Thermal Conductivity of Atomically Thin Semimetallic WTe2

(2016) Michal J. Mleczko et al.   ACS Nano

Highly Flexible and High-Performance Complementary Inverters of Large-Area Transition Metal Dichalcogenide Monolayers

(2016) Jiang Pu et al.   ADVANCED MATERIALS

A Short-Channel $I$ – $V$ Model for 2-D MOSFETs

(2016) Yuan Taur et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition

(2016) Chris D. English et al.   NANO LETTERS

Band Alignment in MoS2/WS2 Transition Metal Dichalcogenide Heterostructures Probed by Scanning Tunneling Microscopy and Spectroscopy

(2016) Heather M. Hill et al.   NANO LETTERS

Intrinsic electrical transport and performance projections of synthetic monolayer MoS2devices

(2016) Kirby K H Smithe et al.   2D Materials

Screening in Ultrashort (5 nm) Channel MoS2 Transistors: A Full-Band Quantum Transport Study

(2015) Varun Mishra et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Radio Frequency Transistors and Circuits Based on CVD MoS2

(2015) Atresh Sanne et al.   NANO LETTERS

High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity

(2015) Kibum Kang et al.   NATURE

Bandgap tunability at single-layer molybdenum disulphide grain boundaries

(2015) Yu Li Huang et al.   Nature Communications

k·ptheory for two-dimensional transition metal dichalcogenide semiconductors

(2015) Andor Kormányos et al.   2D Materials

An atlas of two-dimensional materials

(2014) Pere Miró et al.   CHEMICAL SOCIETY REVIEWS

Compact Modeling and Contact Effects in Thin Film Transistors

(2014) Juan Antonio Jimenez Tejada et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A Compact Current–Voltage Model for 2D Semiconductor Based Field-Effect Transistors Considering Interface Traps, Mobility Degradation, and Inefficient Doping Effect

(2014) Wei Cao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

An Ambipolar Virtual-Source-Based Charge-Current Compact Model for Nanoscale Graphene Transistors

(2014) Shaloo Rakheja et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2

(2014) Lingming Yang et al.   NANO LETTERS

Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering

(2014) Zhihao Yu et al.   Nature Communications

Two-dimensional flexible nanoelectronics

(2014) Deji Akinwande et al.   Nature Communications

Charge Scattering and Mobility in Atomically Thin Semiconductors

(2014) Nan Ma et al.   Physical Review X

Thermal conductivity and phonon linewidths of monolayer MoS2 from first principles

(2013) Wu Li et al.   APPLIED PHYSICS LETTERS

Role of Joule Heating on Current Saturation and Transient Behavior of Graphene Transistors

(2013) Sharnali Islam et al.   IEEE ELECTRON DEVICE LETTERS

Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors

(2012) David Jiménez   APPLIED PHYSICS LETTERS

Transport in Nanoribbon Interconnects Obtained from Graphene Grown by Chemical Vapor Deposition

(2012) Ashkan Behnam et al.   NANO LETTERS

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

(2012) Hui Fang et al.   NANO LETTERS

Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)

(2012) Won Seok Yun et al.   PHYSICAL REVIEW B

Scaling of High-Field Transport and Localized Heating in Graphene Transistors

(2011) Myung-Ho Bae et al.   ACS Nano

Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

(2011) Leitao Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A computationally efficient compact model for fully-depleted SOI MOSFETs with independently-controlled front- and back-gates

(2011) Darsen D. Lu et al.   SOLID-STATE ELECTRONICS

Mobility and saturation velocity in graphene on SiO2

(2010) Vincent E. Dorgan et al.   APPLIED PHYSICS LETTERS

Modeling of graphene metal-oxide-semiconductor field-effect transistors with gapless large-area graphene channels

(2010) S. A. Thiele et al.   JOURNAL OF APPLIED PHYSICS

Selective Device Structure Scaling and Parasitics Engineering: A Way to Extend the Technology Roadmap

(2009) Lan Wei et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Compact Surface Potential Model for FD SOI MOSFET Considering Substrate Depletion Region

(2008) Pradeep Agarwal et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES