Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS2 flake based field effect transistors on SiO2 and hBN substrates

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Title
Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS2 flake based field effect transistors on SiO2 and hBN substrates
Authors
Keywords
-
Journal
NANOTECHNOLOGY
Volume 29, Issue 33, Pages 335202
Publisher
IOP Publishing
Online
2018-05-22
DOI
10.1088/1361-6528/aac6b0

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