Seamless Fabrication and Threshold Engineering in Monolayer MoS2 Dual-Gated Transistors via Hydrogen Silsesquioxane
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Title
Seamless Fabrication and Threshold Engineering in Monolayer MoS2
Dual-Gated Transistors via Hydrogen Silsesquioxane
Authors
Keywords
-
Journal
Advanced Electronic Materials
Volume -, Issue -, Pages 1800888
Publisher
Wiley
Online
2019-02-14
DOI
10.1002/aelm.201800888
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