A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐ k , and Layered Dielectrics

The interplay between structure and function in redox-based resistance switching

(2018) Anthony Kenyon et al.   FARADAY DISCUSSIONS

Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks

(2018) F. Aguirre et al.   JOURNAL OF APPLIED PHYSICS

Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films

(2018) A. Ranjan et al.   Scientific Reports

The interplay between structure and function in redox-based resistance switching

(2018) Anthony Kenyon et al.   FARADAY DISCUSSIONS

Bimodal Dielectric Breakdown in Electronic Devices Using Chemical Vapor Deposited Hexagonal Boron Nitride as Dielectric

(2018) Felix Palumbo et al.   Advanced Electronic Materials

Lack of correlation between C-V hysteresis and capacitance frequency dispersion in accumulation of metal gate/high-k/n-InGaAs metal-oxide-semiconductor stacks

(2018) S. M. Pazos et al.   JOURNAL OF APPLIED PHYSICS

Electron energy dissipation model of gate dielectric progressive breakdown in n- and p-channel field effect transistors

(2017) S. Lombardo et al.   JOURNAL OF APPLIED PHYSICS

Comparative study of the breakdown transients of thin Al2O3 and HfO2 films in MIM structures and their connection with the thermal properties of materials

(2017) S. Pazos et al.   JOURNAL OF APPLIED PHYSICS

High-resolution characterization of hexagonal boron nitride coatings exposed to aqueous and air oxidative environments

(2017) Lanlan Jiang et al.   Nano Research

Re-distribution of oxygen at the interface between γ-Al2O3 and TiN

(2017) E. O. Filatova et al.   Scientific Reports

Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

(2016) Yanfeng Ji et al.   APPLIED PHYSICS LETTERS

HfO2-Based RRAM: Electrode Effects, Ti/HfO2 Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and Ab Initio Calculations

(2016) Boubacar Traore et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

On the use of two dimensional hexagonal boron nitride as dielectric

(2016) Fei Hui et al.   MICROELECTRONIC ENGINEERING

Deep-submicron Graphene Field-Effect Transistors with State-of-Art f max

(2016) Hongming Lyu et al.   Scientific Reports

Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy

(2015) S. Nakhaie et al.   APPLIED PHYSICS LETTERS

High-K materials and metal gates for CMOS applications

(2015) John Robertson et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Transition metal dichalcogenide and hexagonal boron nitride heterostructures grown by molecular beam epitaxy

(2015) A.T. Barton et al.   MICROELECTRONIC ENGINEERING

Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

(2015) Andrea C. Ferrari et al.   Nanoscale

Nanomaterials in transistors: From high-performance to thin-film applications

(2015) A. D. Franklin   SCIENCE

Conductive filament structure in HfO2 resistive switching memory devices

(2015) S. Privitera et al.   SOLID-STATE ELECTRONICS

Modelling heat conduction in polycrystalline hexagonal boron-nitride films

(2015) Bohayra Mortazavi et al.   Scientific Reports

Layer-by-Layer Dielectric Breakdown of Hexagonal Boron Nitride

(2014) Yoshiaki Hattori et al.   ACS Nano

Physical mechanism of progressive breakdown in gate oxides

(2014) Felix Palumbo et al.   JOURNAL OF APPLIED PHYSICS

Degradation characteristics of metal/Al2O3/n-InGaAs capacitors

(2014) F. Palumbo et al.   JOURNAL OF APPLIED PHYSICS

Structural instabilities and wrinkles at the grain boundaries in 2-D h-BN: a first-principles analysis

(2014) Anjali Singh et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Electrochemical dynamics of nanoscale metallic inclusions in dielectrics

(2014) Yuchao Yang et al.   Nature Communications

HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability

(2013) Stephen McDonnell et al.   ACS Nano

High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems

(2013) Hsiao-Yu Chang et al.   ACS Nano

25 GHz Embedded-Gate Graphene Transistors with High-K Dielectrics on Extremely Flexible Plastic Sheets

(2013) Jongho Lee et al.   ACS Nano

Exfoliation of Hexagonal Boron Nitride by Molten Hydroxides

(2013) Xianlei Li et al.   ADVANCED MATERIALS

WSe2 field effect transistors with enhanced ambipolar characteristics

(2013) Saptarshi Das et al.   APPLIED PHYSICS LETTERS

Modeling of time-dependent non-uniform dielectric breakdown using a clustering statistical approach

(2013) Ernest Y. Wu et al.   APPLIED PHYSICS LETTERS

Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain boundaries

(2013) Onofrio Pirrotta et al.   JOURNAL OF APPLIED PHYSICS

Size-dependence of the dielectric breakdown strength from nano- to millimeter scale

(2013) Claudia Neusel et al.   JOURNAL OF THE MECHANICS AND PHYSICS OF SOLIDS

Bimodal CAFM TDDB distributions in polycrystalline HfO2 gate stacks: The role of the interfacial layer and grain boundaries

(2013) V. Iglesias et al.   MICROELECTRONIC ENGINEERING

Microscopy study of the conductive filament in HfO2 resistive switching memory devices

(2013) S. Privitera et al.   MICROELECTRONIC ENGINEERING

Fabrication of large area hexagonal boron nitride thin films for bendable capacitors

(2013) Ning Guo et al.   Nano Research

Ultrathin high-temperature oxidation-resistant coatings of hexagonal boron nitride

(2013) Zheng Liu et al.   Nature Communications

Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices

(2012) Ki Kang Kim et al.   ACS Nano

Inkjet-Printed Graphene Electronics

(2012) Felice Torrisi et al.   ACS Nano

Dislocations and Grain Boundaries in Two-Dimensional Boron Nitride

(2012) Yuanyue Liu et al.   ACS Nano

Photoluminescence of boron nitride nanosheets exfoliated by ball milling

(2012) Lu Hua Li et al.   APPLIED PHYSICS LETTERS

Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

(2012) M. Lanza et al.   APPLIED PHYSICS LETTERS

Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

(2012) M. Lanza et al.   APPLIED PHYSICS LETTERS

Formation and Characterization of Filamentary Current Paths in $\hbox{HfO}_{2}$-Based Resistive Switching Structures

(2012) F. Palumbo et al.   IEEE ELECTRON DEVICE LETTERS

Integrated Circuits Based on Bilayer MoS2 Transistors

(2012) Han Wang et al.   NANO LETTERS

Effective Cleaning of Hexagonal Boron Nitride for Graphene Devices

(2012) Andrei G. F. Garcia et al.   NANO LETTERS

State-of-the-Art Graphene High-Frequency Electronics

(2012) Yanqing Wu et al.   NANO LETTERS

Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers

(2012) Liam Britnell et al.   NANO LETTERS

Scalable Synthesis of Uniform Few-Layer Hexagonal Boron Nitride Dielectric Films

(2012) P. Sutter et al.   NANO LETTERS

Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics

(2012) Thanasis Georgiou et al.   Nature Nanotechnology

Two-dimensional crystals-based heterostructures: materials with tailored properties

(2012) K S Novoselov et al.   PHYSICA SCRIPTA

Converting Graphene Oxide Monolayers into Boron Carbonitride Nanosheets by Substitutional Doping

(2012) Tsung-Wu Lin et al.   Small

Electron tunneling through atomically flat and ultrathin hexagonal boron nitride

(2011) Gwan-Hyoung Lee et al.   APPLIED PHYSICS LETTERS

Chemical Vapor Deposition of Boron Nitride Nanosheets on Metallic Substrates via Decaborane/Ammonia Reactions

(2011) Shahana Chatterjee et al.   CHEMISTRY OF MATERIALS

A Comprehensive LER-Aware TDDB Lifetime Model for Advanced Cu Interconnects

(2011) Michele Stucchi et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Large-scale mechanical peeling of boron nitride nanosheets by low-energy ball milling

(2011) Lu Hua Li et al.   JOURNAL OF MATERIALS CHEMISTRY

How Good Can Monolayer MoS2Transistors Be?

(2011) Youngki Yoon et al.   NANO LETTERS

Nanometre-scale electronics with III–V compound semiconductors

(2011) Jesús A. del Alamo   NATURE

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Enhanced thermal conductivity and isotope effect in single-layer hexagonal boron nitride

(2011) L. Lindsay et al.   PHYSICAL REVIEW B

Grain boundary-driven leakage path formation in HfO2 dielectrics

(2011) G. Bersuker et al.   SOLID-STATE ELECTRONICS

Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics

(2011) Mario Lanza et al.   Nanoscale Research Letters

MoS2 and WS2 Analogues of Graphene

(2010) H. S. S. Ramakrishna Matte et al.   ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

Electrode material dependent breakdown and recovery in advanced high-κ gate stacks

(2010) X. Wu et al.   APPLIED PHYSICS LETTERS

Role of oxygen vacancies in HfO2-based gate stack breakdown

(2010) X. Wu et al.   APPLIED PHYSICS LETTERS

Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces

(2010) Roman Engel-Herbert et al.   JOURNAL OF APPLIED PHYSICS

UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements

(2010) M. Lanza et al.   MICROELECTRONICS RELIABILITY

Large Scale Growth and Characterization of Atomic Hexagonal Boron Nitride Layers

(2010) Li Song et al.   NANO LETTERS

Note: Electrical resolution during conductive atomic force microscopy measurements under different environmental conditions and contact forces

(2010) M. Lanza et al.   REVIEW OF SCIENTIFIC INSTRUMENTS

Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films

(2009) M.A. Panzer et al.   IEEE ELECTRON DEVICE LETTERS

Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

The nature of dielectric breakdown

(2008) X. Li et al.   APPLIED PHYSICS LETTERS

The two-dimensional phase of boron nitride: Few-atomic-layer sheets and suspended membranes

(2008) D. Pacilé et al.   APPLIED PHYSICS LETTERS

Atomic Layer Deposition of Metal Oxides on Pristine and Functionalized Graphene

(2008) Xinran Wang et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

A novel approach to characterization of progressive breakdown in high-k/metal gate stacks

(2008) R. Pagano et al.   MICROELECTRONICS RELIABILITY