Interface Engineering for High-Performance Top-Gated MoS2Field-Effect Transistors

Effects of interface state density on 4H-SiC n-channel field-effect mobility

(2014)   APPLIED PHYSICS LETTERS

MoS2 functionalization for ultra-thin atomic layer deposited dielectrics

(2014) Angelica Azcatl et al.   APPLIED PHYSICS LETTERS

High-performance MoS2 transistors with low-resistance molybdenum contacts

(2014) Jiahao Kang et al.   APPLIED PHYSICS LETTERS

MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts

(2014) Steven Chuang et al.   NANO LETTERS

Improved Growth Behavior of Atomic-Layer-Deposited High-k Dielectrics on Multilayer MoS2 by Oxygen Plasma Pretreatment

(2013) Jaehyun Yang et al.   ACS Applied Materials & Interfaces

Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: An Insight into Current Flow across Schottky Barriers

(2013) Han Liu et al.   ACS Nano

HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability

(2013) Stephen McDonnell et al.   ACS Nano

High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems

(2013) Hsiao-Yu Chang et al.   ACS Nano

Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures

(2013) Simone Bertolazzi et al.   ACS Nano

Velocity saturation in few-layer MoS2 transistor

(2013) Gianluca Fiori et al.   APPLIED PHYSICS LETTERS

Statistical Study of Deep Submicron Dual-Gated Field-Effect Transistors on Monolayer Chemical Vapor Deposition Molybdenum Disulfide Films

(2013) Han Liu et al.   NANO LETTERS

Measurement of mobility in dual-gated MoS2 transistors

(2013) Michael S. Fuhrer et al.   Nature Nanotechnology

Reply to 'Measurement of mobility in dual-gated MoS2 transistors'

(2013) B. Radisavljevic et al.   Nature Nanotechnology

Ultrasensitive photodetectors based on monolayer MoS2

(2013) Oriol Lopez-Sanchez et al.   Nature Nanotechnology

Channel Length Scaling of MoS2 MOSFETs

(2012) Han Liu et al.   ACS Nano

Atomic Layer Deposition of Dielectrics on Graphene Using Reversibly Physisorbed Ozone

(2012) Srikar Jandhyala et al.   ACS Nano

$\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric

(2012) Han Liu et al.   IEEE ELECTRON DEVICE LETTERS

Integrated Circuits Based on Bilayer MoS2 Transistors

(2012) Han Wang et al.   NANO LETTERS

Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics

(2012) Jiang Pu et al.   NANO LETTERS

MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap

(2012) Hee Sung Lee et al.   NANO LETTERS

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Memory Devices Using a Mixture of MoS2and Graphene Oxide as the Active Layer

(2012) Zongyou Yin et al.   Small

MoS2Nanosheets for Top-Gate Nonvolatile Memory Transistor Channel

(2012) Hee Sung Lee et al.   Small

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

(2012) Sunkook Kim et al.   Nature Communications

Integrated Circuits and Logic Operations Based on Single-Layer MoS2

(2011) Branimir Radisavljevic et al.   ACS Nano

Stretching and Breaking of Ultrathin MoS2

(2011) Simone Bertolazzi et al.   ACS Nano

Single-Layer MoS2 Phototransistors

(2011) Zongyou Yin et al.   ACS Nano

Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

(2011) Leitao Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Top-Gated Chemical Vapor Deposition Grown Graphene Transistors with Current Saturation

(2011) Jingwei Bai et al.   NANO LETTERS

How Good Can Monolayer MoS2Transistors Be?

(2011) Youngki Yoon et al.   NANO LETTERS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Influence of quantum confinement on the electronic structure of the transition metal sulfideTS2

(2011) A. Kuc et al.   PHYSICAL REVIEW B

Growth and Performance of Yttrium Oxide as an Ideal High-κ Gate Dielectric for Carbon-Based Electronics

(2010) Zhenxing Wang et al.   NANO LETTERS

Sub-100 nm Channel Length Graphene Transistors

(2010) Lei Liao et al.   NANO LETTERS

Length scaling of carbon nanotube transistors

(2010) Aaron D. Franklin et al.   Nature Nanotechnology

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

High performance ZnO-thin-film transistor with Ta2O5 dielectrics fabricated at room temperature

(2009) L. Zhang et al.   APPLIED PHYSICS LETTERS

Tuning the Effective Fine Structure Constant in Graphene: Opposing Effects of Dielectric Screening on Short- and Long-Range Potential Scattering

(2008) C. Jang et al.   PHYSICAL REVIEW LETTERS