Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density
Published 2014 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density
Authors
Keywords
-
Journal
APL Materials
Volume 2, Issue 9, Pages 092504
Publisher
AIP Publishing
Online
2014-08-06
DOI
10.1063/1.4891824
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Field-Effect Transistors Built from All Two-Dimensional Material Components
- (2014) Tania Roy et al. ACS Nano
- Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells
- (2014) Vivek Sharma et al. APPLIED PHYSICS LETTERS
- Air-Stable Surface Charge Transfer Doping of MoS2 by Benzyl Viologen
- (2014) Daisuke Kiriya et al. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
- Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide
- (2014) Britton W. H. Baugher et al. Nature Nanotechnology
- Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions
- (2014) Jason S. Ross et al. Nature Nanotechnology
- Tunable Photoluminescence of Monolayer MoS2 via Chemical Doping
- (2013) Shinichiro Mouri et al. NANO LETTERS
- Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium
- (2013) Hui Fang et al. NANO LETTERS
- The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
- (2013) Manish Chhowalla et al. Nature Chemistry
- Optical generation of excitonic valley coherence in monolayer WSe2
- (2013) Aaron M. Jones et al. Nature Nanotechnology
- Channel Length Scaling of MoS2 MOSFETs
- (2012) Han Liu et al. ACS Nano
- High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
- (2012) Hui Fang et al. NANO LETTERS
- High Performance Multilayer MoS2 Transistors with Scandium Contacts
- (2012) Saptarshi Das et al. NANO LETTERS
- Tightly bound trions in monolayer MoS2
- (2012) Kin Fai Mak et al. NATURE MATERIALS
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
- (2012) Qing Hua Wang et al. Nature Nanotechnology
- Symmetry-dependent phonon renormalization in monolayer MoS2transistor
- (2012) Biswanath Chakraborty et al. PHYSICAL REVIEW B
- Visibility of dichalcogenide nanolayers
- (2011) M M Benameur et al. NANOTECHNOLOGY
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Mobility extraction in SOI MOSFETs with sub 1nm body thickness
- (2009) M. Schmidt et al. SOLID-STATE ELECTRONICS
- Fourier transform infrared spectroscopy of annealed silicon-rich silicon nitride thin films
- (2008) G. Scardera et al. JOURNAL OF APPLIED PHYSICS
- Ultrahigh electron mobility in suspended graphene
- (2008) K.I. Bolotin et al. SOLID STATE COMMUNICATIONS
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started