MoS2 Field-Effect Transistor with Sub-10 nm Channel Length

Published 2016 View Full Article

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Title
MoS2 Field-Effect Transistor with Sub-10 nm Channel Length
Authors
Keywords
-
Journal
NANO LETTERS
Volume 16, Issue 12, Pages 7798-7806
Publisher
American Chemical Society (ACS)
Online
2016-11-08
DOI
10.1021/acs.nanolett.6b03999

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