The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials

High-Performance Field-Effect Transistor and Logic Gates Based on GaS–MoS2 van der Waals Heterostructure

(2020) Gwang Hyuk Shin et al.   ACS Applied Materials & Interfaces

Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111)

(2020) Tse-An Chen et al.   NATURE

Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates

(2020) Zhiyuan Shi et al.   Nature Communications

CP2K: An electronic structure and molecular dynamics software package - Quickstep: Efficient and accurate electronic structure calculations

(2020) Thomas D. Kühne et al.   JOURNAL OF CHEMICAL PHYSICS

Atomic Layer Deposition of Layered Boron Nitride for Large-Area 2D Electronics

(2020) Jaebeom Lee et al.   ACS Applied Materials & Interfaces

Dielectric Properties of Ultrathin CaF 2 Ionic Crystals

(2020) Chao Wen et al.   ADVANCED MATERIALS

Ultralow-dielectric-constant amorphous boron nitride

(2020) Seokmo Hong et al.   NATURE

Insulators for 2D nanoelectronics: the gap to bridge

(2020) Yury Yu. Illarionov et al.   Nature Communications

A native oxide high-κ gate dielectric for two-dimensional electronics

(2020) Tianran Li et al.   Nature Electronics

2D Semiconductor Transistors with Van der Waals Oxide MoO 3 as Integrated High‐κ Gate Dielectric

(2020) Brian A. Holler et al.   Advanced Electronic Materials

Laser-writable high-k dielectric for van der Waals nanoelectronics

(2019) N. Peimyoo et al.   Science Advances

A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐ k , and Layered Dielectrics

(2019) Felix Palumbo et al.   ADVANCED FUNCTIONAL MATERIALS

Disorder in van der Waals heterostructures of 2D materials

(2019) Daniel Rhodes et al.   NATURE MATERIALS

Characterization of luminescence properties of exfoliated mica via sonication technique

(2019) Suyoung Park et al.   CHEMICAL PHYSICS

Direct band-gap crossover in epitaxial monolayer boron nitride

(2019) C. Elias et al.   Nature Communications

Photonics with hexagonal boron nitride

(2019) Joshua D. Caldwell et al.   Nature Reviews Materials

Graphene and two-dimensional materials for silicon technology

(2019) Deji Akinwande et al.   NATURE

Properties of intrinsic point defects and dimers in hexagonal boron nitride

(2019) Jack Strand et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Comphy — A compact-physics framework for unified modeling of BTI

(2018) G. Rzepa et al.   MICROELECTRONICS RELIABILITY

Unconventional superconductivity in magic-angle graphene superlattices

(2018) Yuan Cao et al.   NATURE

Dirac-source field-effect transistors as energy-efficient, high-performance electronic switches

(2018) Chenguang Qiu et al.   SCIENCE

The computational 2D materials database: High-throughput modeling and discovery of atomically thin crystals

(2018) Sten Haastrup et al.   2D Materials

Efficient algorithms for large-scale quantum transport calculations

(2017) Sascha Brück et al.   JOURNAL OF CHEMICAL PHYSICS

Two dimensional hexagonal boron nitride (2D-hBN): synthesis, properties and applications

(2017) Kailiang Zhang et al.   Journal of Materials Chemistry C

HfSe 2 and ZrSe 2 : Two-dimensional semiconductors with native high-κ oxides

(2017) Michal J. Mleczko et al.   Science Advances

Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

(2016) Yanfeng Ji et al.   APPLIED PHYSICS LETTERS

Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy

(2016) Xin Li et al.   CRYSTAL GROWTH & DESIGN

Achieving Ultrahigh Carrier Mobility in Two-Dimensional Hole Gas of Black Phosphorus

(2016) Gen Long et al.   NANO LETTERS

Hexagonal boron nitride is an indirect bandgap semiconductor

(2016) G. Cassabois et al.   Nature Photonics

Current crowding mediated large contact noise in graphene field-effect transistors

(2016) Paritosh Karnatak et al.   Nature Communications

Van der Waals heterostructures and devices

(2016) Yuan Liu et al.   Nature Reviews Materials

Two-dimensional semiconductors for transistors

(2016) Manish Chhowalla et al.   Nature Reviews Materials

Impact of Contact on the Operation and Performance of Back-Gated Monolayer MoS2 Field-Effect-Transistors

(2015) Wei Liu et al.   ACS Nano

High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors

(2015) Hema C. P. Movva et al.   ACS Nano

Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators

(2015) J. Gaskell et al.   APPLIED PHYSICS LETTERS

Transport properties of ultrathin black phosphorus on hexagonal boron nitride

(2015) Rostislav A. Doganov et al.   APPLIED PHYSICS LETTERS

Tunable Bandgap Narrowing Induced by Controlled Molecular Thickness in 2D Mica Nanosheets

(2015) Sang Sub Kim et al.   CHEMISTRY OF MATERIALS

Electronic Transport of Encapsulated Graphene and WSe2 Devices Fabricated by Pick-up of Prepatterned hBN

(2015) Joel I-Jan Wang et al.   NANO LETTERS

Quality Heterostructures from Two-Dimensional Crystals Unstable in Air by Their Assembly in Inert Atmosphere

(2015) Y. Cao et al.   NANO LETTERS

Evidence for Defect-Mediated Tunneling in Hexagonal Boron Nitride-Based Junctions

(2015) U. Chandni et al.   NANO LETTERS

Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform

(2015) Xu Cui et al.   Nature Nanotechnology

Characterization and manipulation of individual defects in insulating hexagonal boron nitride using scanning tunnelling microscopy

(2015) Dillon Wong et al.   Nature Nanotechnology

High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering

(2015) David J. Perello et al.   Nature Communications

Synthesis of large-area multilayer hexagonal boron nitride for high material performance

(2015) Soo Min Kim et al.   Nature Communications

Hall and field-effect mobilities in few layered p-WSe2 field-effect transistors

(2015) N. R. Pradhan et al.   Scientific Reports

Electron and Hole Mobilities in Single-Layer WSe2

(2014) Adrien Allain et al.   ACS Nano

Origin of the high work function and high conductivity of MoO3

(2014) Yuzheng Guo et al.   APPLIED PHYSICS LETTERS

Electric field effect in ultrathin black phosphorus

(2014) Steven P. Koenig et al.   APPLIED PHYSICS LETTERS

Titanium Oxide Nanosheets: Graphene Analogues with Versatile Functionalities

(2014) Lianzhou Wang et al.   CHEMICAL REVIEWS

High-temperature relaxations in CaF2 single crystals

(2014) J. Wang et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials

Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals

(2014) A. V. Kretinin et al.   NANO LETTERS

Two-dimensional flexible nanoelectronics

(2014) Deji Akinwande et al.   Nature Communications

Gate tunable quantum oscillations in air-stable and high mobility few-layer phosphorene heterostructures

(2014) Nathaniel Gillgren et al.   2D Materials

Magneto-transport in MoS2: Phase Coherence, Spin–Orbit Scattering, and the Hall Factor

(2013) Adam T. Neal et al.   ACS Nano

Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2

(2013) Britton W. H. Baugher et al.   NANO LETTERS

Hofstadter’s butterfly and the fractal quantum Hall effect in moiré superlattices

(2013) C. R. Dean et al.   NATURE

Van der Waals heterostructures

(2013) A. K. Geim et al.   NATURE

Mobility engineering and a metal–insulator transition in monolayer MoS2

(2013) Branimir Radisavljevic et al.   NATURE MATERIALS

One-Dimensional Electrical Contact to a Two-Dimensional Material

(2013) L. Wang et al.   SCIENCE

Ambipolar MoS2 Thin Flake Transistors

(2012) Yijin Zhang et al.   NANO LETTERS

Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers

(2012) Liam Britnell et al.   NANO LETTERS

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

(2012) L. Britnell et al.   SCIENCE

Ultra-thin and Flat Mica as Gate Dielectric Layers

(2012) Chong Guan Low et al.   Small

Two-Dimensional Dielectric Nanosheets: Novel Nanoelectronics From Nanocrystal Building Blocks

(2011) Minoru Osada et al.   ADVANCED MATERIALS

Synthesis of Monolayer Hexagonal Boron Nitride on Cu Foil Using Chemical Vapor Deposition

(2011) Ki Kang Kim et al.   NANO LETTERS

Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature

(2011) Alexander S. Mayorov et al.   NANO LETTERS

Boron nitride substrates for high-quality graphene electronics

(2010) C. R. Dean et al.   Nature Nanotechnology

Effect of high-κgate dielectrics on charge transport in graphene-based field effect transistors

(2010) Aniruddha Konar et al.   PHYSICAL REVIEW B

Electrical characterization and modeling of the Au/CaF2/nSi(111) structures with high-quality tunnel-thin fluoride layer

(2009) M. I. Vexler et al.   JOURNAL OF APPLIED PHYSICS

Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors

(2009) Damon B. Farmer et al.   NANO LETTERS

Effect of a High-κEnvironment on Charge Carrier Mobility in Graphene

(2009) L. A. Ponomarenko et al.   PHYSICAL REVIEW LETTERS

Fabrication of a Freestanding Boron Nitride Single Layer and Its Defect Assignments

(2009) Chuanhong Jin et al.   PHYSICAL REVIEW LETTERS

The two-dimensional phase of boron nitride: Few-atomic-layer sheets and suspended membranes

(2008) D. Pacilé et al.   APPLIED PHYSICS LETTERS

Intrinsic and extrinsic performance limits of graphene devices on SiO2

(2008) Jian-Hao Chen et al.   Nature Nanotechnology

Band offsets of ultrathin high-κoxide films with Si

(2008) Eric Bersch et al.   PHYSICAL REVIEW B

Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

(2007) Sayeef Salahuddin et al.   NANO LETTERS