MoS2-based ferroelectric field-effect transistor with atomic layer deposited Hf0.5Zr0.5O2 films toward memory applications
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Title
MoS2-based ferroelectric field-effect transistor with atomic layer deposited Hf0.5Zr0.5O2 films toward memory applications
Authors
Keywords
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Journal
AIP Advances
Volume 10, Issue 6, Pages 065107
Publisher
AIP Publishing
Online
2020-06-03
DOI
10.1063/5.0010829
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