Two-dimensional materials and their prospects in transistor electronics

Flexible Black Phosphorus Ambipolar Transistors, Circuits and AM Demodulator

(2015) Weinan Zhu et al.   NANO LETTERS

Silicene field-effect transistors operating at room temperature

(2015) Li Tao et al.   Nature Nanotechnology

Graphene Field-Effect Transistors for Radio-Frequency Flexible Electronics

(2015) Nicholas Petrone et al.   IEEE Journal of the Electron Devices Society

High-Gain Inverters Based on WSe2 Complementary Field-Effect Transistors

(2014) Mahmut Tosun et al.   ACS Nano

Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar Behavior, and Scaling

(2014) Yuchen Du et al.   ACS Nano

Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

(2014) Han Liu et al.   ACS Nano

Electrical Transport Properties of Single-Layer WS2

(2014) Dmitry Ovchinnikov et al.   ACS Nano

Electron and Hole Mobilities in Single-Layer WSe2

(2014) Adrien Allain et al.   ACS Nano

Field-Effect Transistors Built from All Two-Dimensional Material Components

(2014) Tania Roy et al.   ACS Nano

Electronic transport in graphene-based heterostructures

(2014) J. Y. Tan et al.   APPLIED PHYSICS LETTERS

Microwave noise characterization of graphene field effect transistors

(2014) M. Tanzid et al.   APPLIED PHYSICS LETTERS

Phonon transport in single-layer transition metal dichalcogenides: A first-principles study

(2014) Xiaokun Gu et al.   APPLIED PHYSICS LETTERS

Exfoliated multilayer MoTe2 field-effect transistors

(2014) S. Fathipour et al.   APPLIED PHYSICS LETTERS

An ultra clean self-aligned process for high maximum oscillation frequency graphene transistors

(2014) Z.H. Feng et al.   CARBON

An atlas of two-dimensional materials

(2014) Pere Miró et al.   CHEMICAL SOCIETY REVIEWS

Benchmarking Transition Metal Dichalcogenide MOSFET in the Ultimate Physical Scaling Limit

(2014) Kausik Majumdar et al.   IEEE ELECTRON DEVICE LETTERS

Performance Limits Projection of Black Phosphorous Field-Effect Transistors

(2014) Kai-Tak Lam et al.   IEEE ELECTRON DEVICE LETTERS

Empirical Model for the Effective Electron Mobility in Silicon Nanowires

(2014) Ralf Granzner et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Kapitza resistance of Si/SiO2 interface

(2014) A. Chernatynskiy et al.   JOURNAL OF APPLIED PHYSICS

Two-dimensional materials for electronic applications

(2014) Max C. Lemme et al.   MRS BULLETIN

Mono- and Bilayer WS2 Light-Emitting Transistors

(2014) Sanghyun Jo et al.   NANO LETTERS

High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

(2014) Hsun-Jen Chuang et al.   NANO LETTERS

All Two-Dimensional, Flexible, Transparent, and Thinnest Thin Film Transistor

(2014) Saptarshi Das et al.   NANO LETTERS

MoS2 Transistors Operating at Gigahertz Frequencies

(2014) Daria Krasnozhon et al.   NANO LETTERS

Pressure-Dependent Optical and Vibrational Properties of Monolayer Molybdenum Disulfide

(2014) Avinash P. Nayak et al.   NANO LETTERS

Black Phosphorus Radio-Frequency Transistors

(2014) Han Wang et al.   NANO LETTERS

Large Area Growth and Electrical Properties of p-Type WSe2 Atomic Layers

(2014) Hailong Zhou et al.   NANO LETTERS

Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics

(2014) Lili Yu et al.   NANO LETTERS

Phase-engineered low-resistance contacts for ultrathin MoS2 transistors

(2014) Rajesh Kappera et al.   NATURE MATERIALS

Electronics based on two-dimensional materials

(2014) Gianluca Fiori et al.   Nature Nanotechnology

Black phosphorus field-effect transistors

(2014) Likai Li et al.   Nature Nanotechnology

A first principles method to simulate electron mobilities in 2D materials

(2014) Oscar D Restrepo et al.   NEW JOURNAL OF PHYSICS

Germanene: a novel two-dimensional germanium allotrope akin to graphene and silicene

(2014) M E Dávila et al.   NEW JOURNAL OF PHYSICS

Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics

(2014) Rui Cheng et al.   Nature Communications

Two-dimensional flexible nanoelectronics

(2014) Deji Akinwande et al.   Nature Communications

Two-dimensional hexagonal tin:ab initiogeometry, stability, electronic structure and functionalization

(2014) B van den Broek et al.   2D Materials

High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems

(2013) Hsiao-Yu Chang et al.   ACS Nano

Tuning the Band Gap of Graphene Nanoribbons Synthesized from Molecular Precursors

(2013) Yen-Chia Chen et al.   ACS Nano

Stability and Exfoliation of Germanane: A Germanium Graphane Analogue

(2013) Elisabeth Bianco et al.   ACS Nano

Low-Contact-Resistance Graphene Devices with Nickel-Etched-Graphene Contacts

(2013) Wei Sun Leong et al.   ACS Nano

Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures

(2013) Simone Bertolazzi et al.   ACS Nano

Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

(2013) Sheneve Z. Butler et al.   ACS Nano

Thermal Conductivity of Monolayer Molybdenum Disulfide Obtained from Temperature-Dependent Raman Spectroscopy

(2013) Rusen Yan et al.   ACS Nano

Remote phonon and impurity screening effect of substrate and gate dielectric on electron dynamics in single layer MoS2

(2013) Lang Zeng et al.   APPLIED PHYSICS LETTERS

High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects

(2013) Wenzhong Bao et al.   APPLIED PHYSICS LETTERS

Cross-plane thermal properties of transition metal dichalcogenides

(2013) C. Muratore et al.   APPLIED PHYSICS LETTERS

Temperature Dependence of Annealed and Nonannealed HEMT Ohmic Contacts Between 5 and 350 K

(2013) Andreas R. Alt et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Engineering Nanowire n-MOSFETs at $L_{g}<8~{\rm nm}$

(2013) Saumitra R. Mehrotra et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High Current-Gain Cutoff Frequencies above 10 MHz in n-Channel C60and p-Channel Pentacene Thin-Film Transistors

(2013) Masatoshi Kitamura et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

First-principles calculation of intrinsic carrier mobility of silicene

(2013) Zhi-Gang Shao et al.   JOURNAL OF APPLIED PHYSICS

Record Maximum Oscillation Frequency in C-Face Epitaxial Graphene Transistors

(2013) Zelei Guo et al.   NANO LETTERS

Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors

(2013) Wei Liu et al.   NANO LETTERS

Synthesis and Transfer of Single-Layer Transition Metal Disulfides on Diverse Surfaces

(2013) Yi-Hsien Lee et al.   NANO LETTERS

Measurement of mobility in dual-gated MoS2 transistors

(2013) Michael S. Fuhrer et al.   Nature Nanotechnology

Reply to 'Measurement of mobility in dual-gated MoS2 transistors'

(2013) B. Radisavljevic et al.   Nature Nanotechnology

Signatures of dynamic screening in interfacial thermal transport of graphene

(2013) Zhun-Yong Ong et al.   PHYSICAL REVIEW B

Computational discovery of single-layer III-V materials

(2013) Houlong L. Zhuang et al.   PHYSICAL REVIEW B

Hybrid density functional study of structural and electronic properties of functionalized Tin+1Xn(X=C, N) monolayers

(2013) Yu Xie et al.   PHYSICAL REVIEW B

Intrinsic electrical transport properties of monolayer silicene and MoS2from first principles

(2013) Xiaodong Li et al.   PHYSICAL REVIEW B

Large-Area 2-D Electronics: Materials, Technology, and Devices

(2013) Allen Hsu et al.   PROCEEDINGS OF THE IEEE

Graphene Transistors: Status, Prospects, and Problems

(2013) Frank Schwierz   PROCEEDINGS OF THE IEEE

Graphene Growth and Device Integration

(2013) Luigi Colombo et al.   PROCEEDINGS OF THE IEEE

Graphene Electronics: Materials, Devices, and Circuits

(2013) Yanqing Wu et al.   PROCEEDINGS OF THE IEEE

Graphene Field-Effect Transistors Based on Boron–Nitride Dielectrics

(2013) Inanc Meric et al.   PROCEEDINGS OF THE IEEE

Liquid Exfoliation of Layered Materials

(2013) V. Nicolosi et al.   SCIENCE

Electronic Structure of Atomically Precise Graphene Nanoribbons

(2012) Pascal Ruffieux et al.   ACS Nano

Two-Dimensional Transition Metal Carbides

(2012) Michael Naguib et al.   ACS Nano

Breakdown of High-Performance Monolayer MoS2 Transistors

(2012) Dominik Lembke et al.   ACS Nano

Coherent Atomic and Electronic Heterostructures of Single-Layer MoS2

(2012) Goki Eda et al.   ACS Nano

Novel Electronic and Magnetic Properties of Two-Dimensional Transition Metal Carbides and Nitrides

(2012) Mohammad Khazaei et al.   ADVANCED FUNCTIONAL MATERIALS

Phonon engineering in nanostructures: Controlling interfacial thermal resistance in multilayer-graphene/dielectric heterojunctions

(2012) R. Mao et al.   APPLIED PHYSICS LETTERS

Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers

(2012) Stefano Larentis et al.   APPLIED PHYSICS LETTERS

Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior

(2012) Wan Sik Hwang et al.   APPLIED PHYSICS LETTERS

Ultra-low resistance ohmic contacts in graphene field effect transistors

(2012) J. S. Moon et al.   APPLIED PHYSICS LETTERS

MXene: a promising transition metal carbide anode for lithium-ion batteries

(2012) Michael Naguib et al.   ELECTROCHEMISTRY COMMUNICATIONS

Vertical Graphene Base Transistor

(2012) Wolfgang Mehr et al.   IEEE ELECTRON DEVICE LETTERS

Monolayer $\hbox{MoS}_{2}$ Transistors Beyond the Technology Road Map

(2012) Khairul Alam et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Material Selection for Minimizing Direct Tunneling in Nanowire Transistors

(2012) Somaia Sarwat Sylvia et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Thermal contact resistance across nanoscale silicon dioxide and silicon interface

(2012) Jie Chen et al.   JOURNAL OF APPLIED PHYSICS

Thermal properties of graphene: Fundamentals and applications

(2012) Eric Pop et al.   MRS BULLETIN

Graphene Field-Effect Transistors with Gigahertz-Frequency Power Gain on Flexible Substrates

(2012) Nicholas Petrone et al.   NANO LETTERS

State-of-the-Art Graphene High-Frequency Electronics

(2012) Yanqing Wu et al.   NANO LETTERS

Self-Aligned, Extremely High Frequency III–V Metal-Oxide-Semiconductor Field-Effect Transistors on Rigid and Flexible Substrates

(2012) Chuan Wang et al.   NANO LETTERS

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

(2012) Hui Fang et al.   NANO LETTERS

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

Electronics: Back to analogue

(2012) Katherine Bourzac   NATURE

Material history: Learning from silicon

(2012) Michael Segal   NATURE

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Phonon-limited mobility inn-type single-layer MoS2from first principles

(2012) Kristen Kaasbjerg et al.   PHYSICAL REVIEW B

Electronic Structure of Spatially Aligned Graphene Nanoribbons on Au(788)

(2012) S. Linden et al.   PHYSICAL REVIEW LETTERS

Silicene: Compelling Experimental Evidence for Graphenelike Two-Dimensional Silicon

(2012) Patrick Vogt et al.   PHYSICAL REVIEW LETTERS

High-frequency self-aligned graphene transistors with transferred gate stacks

(2012) R. Cheng et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

(2012) L. Britnell et al.   SCIENCE

Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier

(2012) H. Yang et al.   SCIENCE

Scaling of High-Field Transport and Localized Heating in Graphene Transistors

(2011) Myung-Ho Bae et al.   ACS Nano

Integrated Circuits and Logic Operations Based on Single-Layer MoS2

(2011) Branimir Radisavljevic et al.   ACS Nano

Stretching and Breaking of Ultrathin MoS2

(2011) Simone Bertolazzi et al.   ACS Nano

Two-Dimensional Nanocrystals Produced by Exfoliation of Ti3AlC2

(2011) Michael Naguib et al.   ADVANCED MATERIALS

Drift velocity peak and negative differential mobility in high field transport in graphene nanoribbons explained by numerical simulations

(2011) A. Betti et al.   APPLIED PHYSICS LETTERS

Boron nitride substrates for high mobility chemical vapor deposited graphene

(2011) W. Gannett et al.   APPLIED PHYSICS LETTERS

Electronic properties of hydrogenated silicene and germanene

(2011) M. Houssa et al.   APPLIED PHYSICS LETTERS

Fabrication of 150-nm T-Gate Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by MOCVD

(2011) Haiou Li et al.   IEEE ELECTRON DEVICE LETTERS

Contact-Resistance Reduction for Strained n-FinFETs With Silicon–Carbon Source/Drain and Platinum-Based Silicide Contacts Featuring Tellurium Implantation and Segregation

(2011) Shao-Ming Koh et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

(2011) Leitao Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Measurement of the Kapitza resistance across a bicrystal interface

(2011) D. H. Hurley et al.   JOURNAL OF APPLIED PHYSICS

Group IV Graphene- and Graphane-Like Nanosheets

(2011) Joelson C. Garcia et al.   Journal of Physical Chemistry C

Graphene field-effect transistors

(2011) Dharmendar Reddy et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Channel Length Scaling in Graphene Field-Effect Transistors Studied with Pulsed Current−Voltage Measurements

(2011) Inanc Meric et al.   NANO LETTERS

Epitaxial Graphene Transistors: Enhancing Performance via Hydrogen Intercalation

(2011) Joshua A. Robinson et al.   NANO LETTERS

Tunable Bandgap in Silicene and Germanene

(2011) Zeyuan Ni et al.   NANO LETTERS

Room-temperature high on/off ratio in suspended graphene nanoribbon field-effect transistors

(2011) Ming-Wei Lin et al.   NANOTECHNOLOGY

A role for graphene in silicon-based semiconductor devices

(2011) Kinam Kim et al.   NATURE

Nanometre-scale electronics with III–V compound semiconductors

(2011) Jesús A. del Alamo   NATURE

The origins and limits of metal–graphene junction resistance

(2011) Fengnian Xia et al.   Nature Nanotechnology

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Electron transport properties of bilayer graphene

(2011) X. Li et al.   PHYSICAL REVIEW B

Thermally Limited Current Carrying Ability of Graphene Nanoribbons

(2011) Albert D. Liao et al.   PHYSICAL REVIEW LETTERS

Estimating Kapitza Resistance Between ${\rm Si}\hbox{-}{\rm SiO}_{2}$ Interface Using Molecular Dynamics Simulations

(2011) Sanket S. Mahajan et al.   IEEE Transactions on Components Packaging and Manufacturing Technology

THz Monolithic Integrated Circuits Using InP High Electron Mobility Transistors

(2011) William Deal et al.   IEEE Transactions on Terahertz Science and Technology

Measurement of the thermal conductance of the graphene/SiO2 interface

(2010) Kin Fai Mak et al.   APPLIED PHYSICS LETTERS

Mobility and saturation velocity in graphene on SiO2

(2010) Vincent E. Dorgan et al.   APPLIED PHYSICS LETTERS

Scalability of Atomic-Thin-Body (ATB) Transistors Based on Graphene Nanoribbons

(2010) Qin Zhang et al.   IEEE ELECTRON DEVICE LETTERS

30-nm InAs PHEMTs With $f_{T} = \hbox{644}\ \hbox{GHz}$ and $f_{\max} = \hbox{681}\ \hbox{GHz}$

(2010) Dae-Hyun Kim et al.   IEEE ELECTRON DEVICE LETTERS

Properties of Fluorinated Graphene Films

(2010) Jeremy T. Robinson et al.   NANO LETTERS

Graphene Films with Large Domain Size by a Two-Step Chemical Vapor Deposition Process

(2010) Xuesong Li et al.   NANO LETTERS

High-speed graphene transistors with a self-aligned nanowire gate

(2010) Lei Liao et al.   NATURE

Atomically precise bottom-up fabrication of graphene nanoribbons

(2010) Jinming Cai et al.   NATURE

Graphene transistors

(2010) Frank Schwierz   Nature Nanotechnology

Nanowire transistors without junctions

(2010) Jean-Pierre Colinge et al.   Nature Nanotechnology

Simulation of hydrogenated graphene field-effect transistors through a multiscale approach

(2010) G. Fiori et al.   PHYSICAL REVIEW B

Armchair nanoribbons of silicon and germanium honeycomb structures

(2010) S. Cahangirov et al.   PHYSICAL REVIEW B

Two-Dimensional Phonon Transport in Supported Graphene

(2010) J. H. Seol et al.   SCIENCE

100-GHz Transistors from Wafer-Scale Epitaxial Graphene

(2010) Y.-M. Lin et al.   SCIENCE

Fluorographene: A Two-Dimensional Counterpart of Teflon

(2010) Rahul R. Nair et al.   Small

Thermal contact resistance between graphene and silicon dioxide

(2009) Z. Chen et al.   APPLIED PHYSICS LETTERS

Monolayer honeycomb structures of group-IV elements and III-V binary compounds: First-principles calculations

(2009) H. Şahin et al.   PHYSICAL REVIEW B

Control of Graphene's Properties by Reversible Hydrogenation: Evidence for Graphane

(2009) D. C. Elias et al.   SCIENCE

Mobility extraction in SOI MOSFETs with sub 1nm body thickness

(2009) M. Schmidt et al.   SOLID-STATE ELECTRONICS

30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz

(2008) Dae-Hyun Kim et al.   IEEE ELECTRON DEVICE LETTERS

Superior Thermal Conductivity of Single-Layer Graphene

(2008) Alexander A. Balandin et al.   NANO LETTERS

Tailoring the atomic structure of graphene nanoribbons by scanning tunnelling microscope lithography

(2008) Levente Tapasztó et al.   Nature Nanotechnology

Intrinsic and extrinsic performance limits of graphene devices on SiO2

(2008) Jian-Hao Chen et al.   Nature Nanotechnology

Tight-binding energy dispersions of armchair-edge graphene nanostrips

(2008) D. Gunlycke et al.   PHYSICAL REVIEW B

Room-Temperature All-Semiconducting Sub-10-nm Graphene Nanoribbon Field-Effect Transistors

(2008) Xinran Wang et al.   PHYSICAL REVIEW LETTERS

Orbital-dependent density functionals: Theory and applications

(2008) Stephan Kümmel et al.   REVIEWS OF MODERN PHYSICS

Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors

(2008) X. Li et al.   SCIENCE