Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
Published 2015 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
Authors
Keywords
-
Journal
Nature Nanotechnology
Volume 10, Issue 6, Pages 534-540
Publisher
Springer Nature
Online
2015-04-28
DOI
10.1038/nnano.2015.70
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Study on the Resistance Distribution at the Contact between Molybdenum Disulfide and Metals
- (2014) Yao Guo et al. ACS Nano
- Field-Effect Transistors Built from All Two-Dimensional Material Components
- (2014) Tania Roy et al. ACS Nano
- Transport Properties of Monolayer MoS2 Grown by Chemical Vapor Deposition
- (2014) Hennrik Schmidt et al. NANO LETTERS
- Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals
- (2014) A. V. Kretinin et al. NANO LETTERS
- Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics
- (2014) Lili Yu et al. NANO LETTERS
- Phase-engineered low-resistance contacts for ultrathin MoS2 transistors
- (2014) Rajesh Kappera et al. NATURE MATERIALS
- Atomically thin p–n junctions with van der Waals heterointerfaces
- (2014) Chul-Ho Lee et al. Nature Nanotechnology
- Valley and band structure engineering of folded MoS2 bilayers
- (2014) Tao Jiang et al. Nature Nanotechnology
- The valley Hall effect in MoS2 transistors
- (2014) K. F. Mak et al. SCIENCE
- Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering
- (2014) Zhihao Yu et al. Nature Communications
- Contact research strategy for emerging molybdenum disulfide and other two-dimensional field-effect transistors
- (2014) Yuchen Du et al. APL Materials
- Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: An Insight into Current Flow across Schottky Barriers
- (2013) Han Liu et al. ACS Nano
- Magneto-transport in MoS2: Phase Coherence, Spin–Orbit Scattering, and the Hall Factor
- (2013) Adam T. Neal et al. ACS Nano
- Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
- (2013) Gwan-Hyoung Lee et al. ACS Nano
- High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects
- (2013) Wenzhong Bao et al. APPLIED PHYSICS LETTERS
- Where Does the Current Flow in Two-Dimensional Layered Systems?
- (2013) Saptarshi Das et al. NANO LETTERS
- Electroluminescence in Single Layer MoS2
- (2013) R. S. Sundaram et al. NANO LETTERS
- Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2
- (2013) Britton W. H. Baugher et al. NANO LETTERS
- Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide
- (2013) Arend M. van der Zande et al. NATURE MATERIALS
- Mobility engineering and a metal–insulator transition in monolayer MoS2
- (2013) Branimir Radisavljevic et al. NATURE MATERIALS
- Three-band tight-binding model for monolayers of group-VIB transition metal dichalcogenides
- (2013) Gui-Bin Liu et al. PHYSICAL REVIEW B
- Intrinsic electrical transport properties of monolayer silicene and MoS2from first principles
- (2013) Xiaodong Li et al. PHYSICAL REVIEW B
- Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films
- (2013) L. Britnell et al. SCIENCE
- One-Dimensional Electrical Contact to a Two-Dimensional Material
- (2013) L. Wang et al. SCIENCE
- CAND1 controls in vivo dynamics of the cullin 1-RING ubiquitin ligase repertoire
- (2013) Shuangding Wu et al. Nature Communications
- Channel Length Scaling of MoS2 MOSFETs
- (2012) Han Liu et al. ACS Nano
- Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances
- (2012) APPLIED PHYSICS LETTERS
- Integrated Circuits Based on Bilayer MoS2 Transistors
- (2012) Han Wang et al. NANO LETTERS
- High Performance Multilayer MoS2 Transistors with Scandium Contacts
- (2012) Saptarshi Das et al. NANO LETTERS
- Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices
- (2012) S. J. Haigh et al. NATURE MATERIALS
- Not just a pretty flower
- (2012) Jie Zeng et al. Nature Nanotechnology
- Control of valley polarization in monolayer MoS2 by optical helicity
- (2012) Kin Fai Mak et al. Nature Nanotechnology
- Phonon-limited mobility inn-type single-layer MoS2from first principles
- (2012) Kristen Kaasbjerg et al. PHYSICAL REVIEW B
- Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides
- (2012) Di Xiao et al. PHYSICAL REVIEW LETTERS
- High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
- (2012) Sunkook Kim et al. Nature Communications
- Use of stable isotope labeling by amino acids in cell culture as a spike-in standard in quantitative proteomics
- (2011) Tamar Geiger et al. Nature Protocols
- Electronic transport in two-dimensional graphene
- (2011) S. Das Sarma et al. REVIEWS OF MODERN PHYSICS
- Anomalous Lattice Vibrations of Single- and Few-Layer MoS2
- (2010) Changgu Lee et al. ACS Nano
- Atomically ThinMoS2: A New Direct-Gap Semiconductor
- (2010) Kin Fai Mak et al. PHYSICAL REVIEW LETTERS
- Intrinsic and extrinsic performance limits of graphene devices on SiO2
- (2008) Jian-Hao Chen et al. Nature Nanotechnology
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationFind the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
Search