Phonon-limited mobility inn-type single-layer MoS2from first principles

Low-temperature photocarrier dynamics in monolayer MoS2

(2011) T. Korn et al.   APPLIED PHYSICS LETTERS

A Comparative Study of Lattice Dynamics of Three- and Two-Dimensional MoS2

(2011) C. Ataca et al.   Journal of Physical Chemistry C

Functionalization of Single-Layer MoS2 Honeycomb Structures

(2011) C. Ataca et al.   Journal of Physical Chemistry C

How Good Can Monolayer MoS2Transistors Be?

(2011) Youngki Yoon et al.   NANO LETTERS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Nonmonotonic temperature dependent transport in graphene grown by chemical vapor deposition

(2011) J. Heo et al.   PHYSICAL REVIEW B

Band-gap transition induced by interlayer van der Waals interaction in MoS2

(2011) S. W. Han et al.   PHYSICAL REVIEW B

Phonons in single-layer and few-layer MoS2and WS2

(2011) A. Molina-Sánchez et al.   PHYSICAL REVIEW B

New directions in science and technology: two-dimensional crystals

(2011) A H Castro Neto et al.   REPORTS ON PROGRESS IN PHYSICS

Electronic transport in two-dimensional graphene

(2011) S. Das Sarma et al.   REVIEWS OF MODERN PHYSICS

Anomalous Lattice Vibrations of Single- and Few-Layer MoS2

(2010) Changgu Lee et al.   ACS Nano

A mixed-space approach to first-principles calculations of phonon frequencies for polar materials

(2010) Y Wang et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Electronic structure calculations with GPAW: a real-space implementation of the projector augmented-wave method

(2010) J Enkovaara et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Emerging Photoluminescence in Monolayer MoS2

(2010) Andrea Splendiani et al.   NANO LETTERS

Theoretical intrinsic lifetime limit of shallow donor states in silicon

(2010) Valeriy Tyuterev et al.   PHYSICAL REVIEW B

Effect of high-κgate dielectrics on charge transport in graphene-based field effect transistors

(2010) Aniruddha Konar et al.   PHYSICAL REVIEW B

First-principles analysis of electron-phonon interactions in graphene

(2010) K. M. Borysenko et al.   PHYSICAL REVIEW B

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

PHON: A program to calculate phonons using the small displacement method

(2009) Dario Alfè   COMPUTER PHYSICS COMMUNICATIONS

Electronic structure of two-dimensional crystals fromab initiotheory

(2009) S. Lebègue et al.   PHYSICAL REVIEW B

Localized atomic basis set in the projector augmented wave method

(2009) A. H. Larsen et al.   PHYSICAL REVIEW B

The electronic properties of graphene

(2009) A. H. Castro Neto et al.   REVIEWS OF MODERN PHYSICS

Intrinsic and extrinsic performance limits of graphene devices on SiO2

(2008) Jian-Hao Chen et al.   Nature Nanotechnology

Limit to two-dimensional mobility in modulation-doped GaAs quantum structures: How to achieve a mobility of 100 million

(2008) E. H. Hwang et al.   PHYSICAL REVIEW B