Negative Capacitance FET With 1.8-nm-Thick Zr-Doped HfO2 Oxide

Published 2019 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Negative Capacitance FET With 1.8-nm-Thick Zr-Doped HfO2 Oxide
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 6, Pages 993-996
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2019-04-26
DOI
10.1109/led.2019.2912413

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.