Metalorganic chemical vapor phase deposition of AlScN/GaN heterostructures

Investigation of growth parameters for ScAlN-barrier HEMT structures by plasma-assisted MBE

(2019) Kathrin Frei et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

The new nitrides: layered, ferroelectric, magnetic, metallic and superconducting nitrides to boost the GaN photonics and electronics eco-system

(2019) Debdeep Jena et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance

(2019) Andrew J. Green et al.   IEEE ELECTRON DEVICE LETTERS

Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE

(2019) Timothy Ciarkowski et al.   Materials

Metal‐Organic Chemical Vapor Deposition of Aluminum Scandium Nitride

(2019) Stefano Leone et al.   Physica Status Solidi-Rapid Research Letters

Elastic modulus and coefficient of thermal expansion of piezoelectric Al1−xScxN (up to x = 0.41) thin films

(2018) Yuan Lu et al.   APL Materials

AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts

(2018) Wojciech Wojtasiak et al.   Micromachines

Suppression of Iron Memory Effect in GaN Epitaxial Layers

(2017) Stefano Leone et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN

(2016) Felix Schubert et al.   SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS

Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition

(2015) Xiao-Hang Li et al.   JOURNAL OF CRYSTAL GROWTH

Piezoelectric coefficients and spontaneous polarization of ScAlN

(2015) Miguel A Caro et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

High performance AlScN thin film based surface acoustic wave devices with large electromechanical coupling coefficient

(2014) Wenbo Wang et al.   APPLIED PHYSICS LETTERS

Growth of InN and In-Rich InGaN Layers on GaN Templates by Pulsed Metalorganic Chemical Vapor Deposition

(2014) A. Kadys et al.   JOURNAL OF ELECTRONIC MATERIALS

ScGaN and ScAlN: emerging nitride materials

(2014) M. A. Moram et al.   Journal of Materials Chemistry A

Impact of residual carbon on two-dimensional electron gas properties in AlxGa1−xN/GaN heterostructure

(2013) Jr-Tai Chen et al.   APPLIED PHYSICS LETTERS

High-performance surface acoustic wave resonators in the 1 to 3 GHz range using a ScAlN/6H-SiC structure

(2013) K. Hashimoto et al.   IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL

Elastic constants and critical thicknesses of ScGaN and ScAlN

(2013) S. Zhang et al.   JOURNAL OF APPLIED PHYSICS

Growth of AlN by pulsed and conventional MOVPE

(2013) Hanno Kröncke et al.   JOURNAL OF CRYSTAL GROWTH

Growth of scandium doped GaN by MOVPE

(2013) C. Saidi et al.   SUPERLATTICES AND MICROSTRUCTURES

Growth, microstructure and morphology of epitaxial ScGaN films

(2011) S. M. Knoll et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Aluminum scandium nitride thin-film bulk acoustic resonators for wide band applications

(2011) Milena Moreira et al.   VACUUM

Wurtzite structure Sc1−xAlxN solid solution films grown by reactive magnetron sputter epitaxy: Structural characterization and first-principles calculations

(2010) Carina Höglund et al.   JOURNAL OF APPLIED PHYSICS

Effect of GaN Buffer Layer Growth Pressure on the Device Characteristics of AlGaN/GaN High-Electron-Mobility Transistors on Si

(2009) Josephine Selvaraj et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering

(2008) Morito Akiyama et al.   ADVANCED MATERIALS