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Title
Ferroelectric devices and circuits for neuro-inspired computing
Authors
Keywords
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Journal
MRS Communications
Volume -, Issue -, Pages 1-11
Publisher
Cambridge University Press (CUP)
Online
2020-09-21
DOI
10.1557/mrc.2020.71
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Related references
Note: Only part of the references are listed.- Drain-Erase Scheme in Ferroelectric Field Effect Transistor—Part II: 3-D-NAND Architecture for In-Memory Computing
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- Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8Zr0.2O2, High Endurance and Breakdown Recovery
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- Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element
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