Very large remanent polarization in ferroelectric Hf1-xZrxO2 grown on Ge substrates by plasma assisted atomic oxygen deposition
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Title
Very large remanent polarization in ferroelectric Hf1-xZrxO2 grown on Ge substrates by plasma assisted atomic oxygen deposition
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 114, Issue 11, Pages 112901
Publisher
AIP Publishing
Online
2019-03-18
DOI
10.1063/1.5090036
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- (2018) Éamon O’Connor et al. APL Materials
- Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2
- (2016) Michael Hoffmann et al. ADVANCED FUNCTIONAL MATERIALS
- Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films
- (2015) Min Hyuk Park et al. ADVANCED MATERIALS
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- (2015) Patrick D. Lomenzo et al. IEEE ELECTRON DEVICE LETTERS
- Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects
- (2015) J. Muller et al. ECS Journal of Solid State Science and Technology
- The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity
- (2014) Min Hyuk Park et al. APPLIED PHYSICS LETTERS
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- (2014) Ryan P. Haggerty et al. JOURNAL OF THE AMERICAN CERAMIC SOCIETY
- Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$
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- (2011) T. S. Böscke et al. APPLIED PHYSICS LETTERS
- Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
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