Metal‐Organic Chemical Vapor Deposition of Aluminum Scandium Nitride

Investigation of growth parameters for ScAlN-barrier HEMT structures by plasma-assisted MBE

(2019) Kathrin Frei et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance

(2019) Andrew J. Green et al.   IEEE ELECTRON DEVICE LETTERS

Elastic modulus and coefficient of thermal expansion of piezoelectric Al1−xScxN (up to x = 0.41) thin films

(2018) Yuan Lu et al.   APL Materials

AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution

(2017) Birte-Julia Godejohann et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN

(2016) Felix Schubert et al.   SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS

Piezoelectric coefficients and spontaneous polarization of ScAlN

(2015) Miguel A Caro et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Hydride vapor phase epitaxy and characterization of high-quality ScN epilayers

(2014) Yuichi Oshima et al.   JOURNAL OF APPLIED PHYSICS

ScGaN and ScAlN: emerging nitride materials

(2014) M. A. Moram et al.   Journal of Materials Chemistry A

Impact of residual carbon on two-dimensional electron gas properties in AlxGa1−xN/GaN heterostructure

(2013) Jr-Tai Chen et al.   APPLIED PHYSICS LETTERS

High-performance surface acoustic wave resonators in the 1 to 3 GHz range using a ScAlN/6H-SiC structure

(2013) K. Hashimoto et al.   IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL

Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides

(2013) Siyuan Zhang et al.   JOURNAL OF APPLIED PHYSICS

Volume matching condition to establish the enhanced piezoelectricity in ternary (Sc,Y)0.5(Al,Ga,In)0.5N alloys

(2013) Christopher Tholander et al.   PHYSICAL REVIEW B

Growth of scandium doped GaN by MOVPE

(2013) C. Saidi et al.   SUPERLATTICES AND MICROSTRUCTURES

Aluminum scandium nitride thin-film bulk acoustic resonators for wide band applications

(2011) Milena Moreira et al.   VACUUM

Wurtzite structure Sc1−xAlxN solid solution films grown by reactive magnetron sputter epitaxy: Structural characterization and first-principles calculations

(2010) Carina Höglund et al.   JOURNAL OF APPLIED PHYSICS

Structural properties of MBE AlInN and AlGaInN barrier layers for GaN-HEMT structures

(2010) Lutz Kirste et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Origin of the Anomalous Piezoelectric Response in WurtziteScxAl1−xNAlloys

(2010) Ferenc Tasnádi et al.   PHYSICAL REVIEW LETTERS

Influence of growth temperature and scandium concentration on piezoelectric response of scandium aluminum nitride alloy thin films

(2009) Morito Akiyama et al.   APPLIED PHYSICS LETTERS

Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering

(2008) Morito Akiyama et al.   ADVANCED MATERIALS

HVPE of scandium nitride on 6H–SiC(0001)

(2008) J.H. Edgar et al.   JOURNAL OF CRYSTAL GROWTH