Temperature Dependence of the Pyroelectric Coefficient of AlScN Thin Films
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Title
Temperature Dependence of the Pyroelectric Coefficient of AlScN Thin Films
Authors
Keywords
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Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 215, Issue 13, Pages 1700831
Publisher
Wiley
Online
2018-03-06
DOI
10.1002/pssa.201700831
References
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Related references
Note: Only part of the references are listed.- The pyroelectric coefficient of free standing GaN grown by HVPE
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- (2015) P.M. Mayrhofer et al. SENSORS AND ACTUATORS A-PHYSICAL
- High performance AlScN thin film based surface acoustic wave devices with large electromechanical coupling coefficient
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- High-performance surface acoustic wave resonators in the 1 to 3 GHz range using a ScAlN/6H-SiC structure
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- Variation of the intrinsic stress gradient in thin aluminum nitride films
- (2013) H Mehner et al. JOURNAL OF MICROMECHANICS AND MICROENGINEERING
- Microstructure and dielectric properties of piezoelectric magnetron sputtered w-ScxAl1−xN thin films
- (2012) Agne Zukauskaite et al. JOURNAL OF APPLIED PHYSICS
- Electromechanical properties of Al0.9Sc0.1N thin films evaluated at 2.5 GHz film bulk acoustic resonators
- (2011) Ramin Matloub et al. APPLIED PHYSICS LETTERS
- Wurtzite structure Sc1−xAlxN solid solution films grown by reactive magnetron sputter epitaxy: Structural characterization and first-principles calculations
- (2010) Carina Höglund et al. JOURNAL OF APPLIED PHYSICS
- Origin of the Anomalous Piezoelectric Response in WurtziteScxAl1−xNAlloys
- (2010) Ferenc Tasnádi et al. PHYSICAL REVIEW LETTERS
- Influence of growth temperature and scandium concentration on piezoelectric response of scandium aluminum nitride alloy thin films
- (2009) Morito Akiyama et al. APPLIED PHYSICS LETTERS
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