1T Non-Volatile Memory Design Using Sub-10nm Ferroelectric FETs

Published 2018 View Full Article

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Title
1T Non-Volatile Memory Design Using Sub-10nm Ferroelectric FETs
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 39, Issue 3, Pages 359-362
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2018-01-26
DOI
10.1109/led.2018.2797887

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