ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance

Authors

Keywords

Journal

Volume 40, Issue 7, Pages 1056-1059

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2019-05-09

DOI

10.1109/led.2019.2915555

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