On the validity and applicability of models of negative capacitance and implications for MOS applications
Published 2018 View Full Article
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Title
On the validity and applicability of models of negative capacitance and implications for MOS applications
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 113, Issue 4, Pages 042904
Publisher
AIP Publishing
Online
2018-07-25
DOI
10.1063/1.5036984
References
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Related references
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- (2015) Jaesung Jo et al. CURRENT APPLIED PHYSICS
- Stability Constraints Define the Minimum Subthreshold Swing of a Negative Capacitance Field-Effect Transistor
- (2014) Ankit Jain et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Experimental Observation of Negative Capacitance in Ferroelectrics at Room Temperature
- (2014) Daniel J. R. Appleby et al. NANO LETTERS
- Experimental confirmation of temperature dependent negative capacitance in ferroelectric field effect transistor
- (2012) Giovanni A. Salvatore et al. APPLIED PHYSICS LETTERS
- Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures
- (2011) Asif Islam Khan et al. APPLIED PHYSICS LETTERS
- Examination of the Possibility of Negative Capacitance Using Ferroelectric Materials in Solid State Electronic Devices
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- (2010) Y. Zhou SOLID STATE COMMUNICATIONS
- Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
- (2007) Sayeef Salahuddin et al. NANO LETTERS
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