Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

Hafnium Oxide Based CMOS Compatible Ferroelectric Materials

(2013) U. Schroeder et al.   ECS Journal of Solid State Science and Technology

Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin films

(2012) J. Müller et al.   APPLIED PHYSICS LETTERS

Ten-Nanometer Ferroelectric $\hbox{Si:HfO}_{2}$ Films for Next-Generation FRAM Capacitors

(2012) Stefan Mueller et al.   IEEE ELECTRON DEVICE LETTERS

Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$

(2012) Johannes Muller et al.   IEEE ELECTRON DEVICE LETTERS

Reliability Characteristics of Ferroelectric $ \hbox{Si:HfO}_{2}$ Thin Films for Memory Applications

(2012) Stefan Mueller et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Ferroelectricity in Simple Binary ZrO2 and HfO2

(2012) Johannes Müller et al.   NANO LETTERS

Controlled oxygen vacancy induced p-type conductivity in HfO2−x thin films

(2011) Erwin Hildebrandt et al.   APPLIED PHYSICS LETTERS

Development of hafnium based high-k materials—A review

(2011) J.H. Choi et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Impact of interface variations on J–V and C–V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1−x)AlxO2 films

(2009) W. Weinreich et al.   MICROELECTRONIC ENGINEERING