Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate

Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part II: Select Devices

(2018) Alessandro Bricalli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors

(2018) S.V. Tikhov et al.   MICROELECTRONIC ENGINEERING

The Ultra-Low Power Performance of a-SiNx Oy :H Resistive Switching Memory

(2018) Hui Zhang et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Emulation of synaptic metaplasticity in memristors

(2017) Xiaojian Zhu et al.   Nanoscale

Nano-cone resistive memory for ultralow power operation

(2017) Sungjun Kim et al.   NANOTECHNOLOGY

Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device

(2017) Sungjun Kim et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Direct Observation of Dual-Filament Switching Behaviors in Ta2 O5 -Based Memristors

(2017) Chia-Fu Chang et al.   Small

Understanding rectifying and nonlinear bipolar resistive switching characteristics in Ni/SiNx/p-Si memory devices

(2017) Sungjun Kim et al.   RSC Advances

Superior resistive switching memory and biological synapse properties based on a simple TiN/SiO2/p-Si tunneling junction structure

(2017) Xiaobing Yan et al.   Journal of Materials Chemistry C

Graphene and Related Materials for Resistive Random Access Memories

(2017) Fei Hui et al.   Advanced Electronic Materials

High-Speed and Low-Energy Nitride Memristors

(2016) Byung Joon Choi et al.   ADVANCED FUNCTIONAL MATERIALS

Study of self-compliance behaviors and internal filament characteristics in intrinsic SiOx-based resistive switching memory

(2016) Yao-Feng Chang et al.   APPLIED PHYSICS LETTERS

Sub-10 nm low current resistive switching behavior in hafnium oxide stack

(2016) Y. Hou et al.   APPLIED PHYSICS LETTERS

Nonlinear and multilevel resistive switching memory in Ni/Si3N4/Al2O3/TiN structures

(2016) Sungjun Kim et al.   APPLIED PHYSICS LETTERS

Self-selection effects and modulation of TaOx resistive switching random access memory with bottom electrode of highly doped Si

(2016) Muxi Yu et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching characteristics of Al/Si3N4/p-Si MIS-based resistive switching memory devices

(2016) Hee-Dong Kim et al.   JOURNAL OF THE KOREAN PHYSICAL SOCIETY

Engineering incremental resistive switching in TaOxbased memristors for brain-inspired computing

(2016) Zongwei Wang et al.   Nanoscale

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

(2016) Qing Luo et al.   Nanoscale

Modulation of nonlinear resistive switching behavior of a TaOx-based resistive device through interface engineering

(2016) Zongwei Wang et al.   NANOTECHNOLOGY

3D Ta/TaOx/TiO2/Ti synaptic array and linearity tuning of weight update for hardware neural network applications

(2016) I-Ting Wang et al.   NANOTECHNOLOGY

Proton exchange reactions in SiOx-based resistive switching memory: Review and insights from impedance spectroscopy

(2016) Yao-Feng Chang et al.   PROGRESS IN SOLID STATE CHEMISTRY

Compact Two-State-Variable Second-Order Memristor Model

(2016) Sungho Kim et al.   Small

Roles of oxygen and nitrogen in control of nonlinear resistive behaviors via filamentary and homogeneous switching in an oxynitride thin film memristor

(2016) Yu-Chuan Shih et al.   RSC Advances

Fully Si compatible SiN resistive switching memory with large self-rectification ratio

(2016) Sungjun Kim et al.   AIP Advances

Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide

(2016) Yao-Feng Chang et al.   Scientific Reports

Trilayer Tunnel Selectors for Memristor Memory Cells

(2015) Byung Joon Choi et al.   ADVANCED MATERIALS

Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications

(2015) Sungjun Kim et al.   APPLIED PHYSICS LETTERS

Resistance controllability and variability improvement in a TaOx-based resistive memory for multilevel storage application

(2015) A. Prakash et al.   APPLIED PHYSICS LETTERS

Resistive Switching Characteristics of WO3/ZrO2 Structure With Forming-Free, Self-Compliance, and Submicroampere Current Operation

(2015) Tsung-Ling Tsai et al.   IEEE ELECTRON DEVICE LETTERS

Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment

(2015) Ji Chen et al.   IEEE ELECTRON DEVICE LETTERS

Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer

(2015) Umesh Chand et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistive Switching Characteristics of Silicon Nitride-Based RRAM Depending on Top Electrode Metals

(2015) Sungjun KIM et al.   IEICE TRANSACTIONS ON ELECTRONICS

Self-rectifying resistive switching behavior observed in Si 3 N 4 -based resistive random access memory devices

(2015) Hee-Dong Kim et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Poole-Frenkel-effect as dominating current mechanism in thin oxide films—An illusion?!

(2015) Herbert Schroeder   JOURNAL OF APPLIED PHYSICS

Manganite-based memristive heterojunction with tunable non-linear I–V characteristics

(2015) Hong-Sub Lee et al.   Nanoscale

Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application

(2015) Shuang Gao et al.   Nanoscale

a-SiNx:H-based ultra-low power resistive random access memory with tunable Si dangling bond conduction paths

(2015) Xiaofan Jiang et al.   Scientific Reports

Implementation of Complete Boolean Logic Functions in Single Complementary Resistive Switch

(2015) Shuang Gao et al.   Scientific Reports

Resistive Switching Characteristics of Silicon Nitride-Based RRAM Depending on Top Electrode Metals

(2015) Sungjun KIM et al.   IEICE TRANSACTIONS ON ELECTRONICS

Impact of device size and thickness of Al2O3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application

(2015) Rajeswar Panja et al.   Nanoscale Research Letters

Tuning Resistive Switching Characteristics of Tantalum Oxide Memristors through Si Doping

(2014) Sungho Kim et al.   ACS Nano

Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure

(2014) Jung Ho Yoon et al.   ADVANCED FUNCTIONAL MATERIALS

A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View

(2014) Jun Yeong Seok et al.   ADVANCED FUNCTIONAL MATERIALS

Area and Thickness Scaling of Forming Voltage of Resistive Switching Memories

(2014) An Chen   IEEE ELECTRON DEVICE LETTERS

On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime

(2014) L. Goux et al.   JOURNAL OF APPLIED PHYSICS

Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

(2014) Xiaofan Jiang et al.   JOURNAL OF APPLIED PHYSICS

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations

(2014) L. Zhao et al.   Nanoscale

Effect of nanopyramid bottom electrodes on bipolar resistive switching phenomena in nickel nitride films-based crossbar arrays

(2014) Hee-Dong Kim et al.   NANOTECHNOLOGY

Study of Multi-level Characteristics for 3D Vertical Resistive Switching Memory

(2014) Yue Bai et al.   Scientific Reports

Self-Rectifying Resistive-Switching Device With $ \hbox{a-Si/WO}_{3}$ Bilayer

(2013) Hangbing Lv et al.   IEEE ELECTRON DEVICE LETTERS

Nanometer-Scale ${\rm HfO}_{x}$ RRAM

(2013) Zhiping Zhang et al.   IEEE ELECTRON DEVICE LETTERS

Effect of Work Function Difference Between Top and Bottom Electrodes on the Resistive Switching Properties of SiN Films

(2013) Seok Man Hong et al.   IEEE ELECTRON DEVICE LETTERS

Integrated One Diode–One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography

(2013) Li Ji et al.   NANO LETTERS

Improved resistive switching phenomena observed in SiNx-based resistive switching memory through oxygen doping process

(2013) Ju Hyun Park et al.   Physica Status Solidi-Rapid Research Letters

Scaling Effect on Unipolar and Bipolar Resistive Switching of Metal Oxides

(2013) Takeshi Yanagida et al.   Scientific Reports

$\hbox{HfO}_{2}$-Based RRAM Devices With Varying Contact Sizes and Their Electrical Behavior

(2012) Venkatakrishnan Sriraman et al.   IEEE ELECTRON DEVICE LETTERS

In-Depth Study on the Effect of Active-Area Scale-Down of Solution-Processed $\hbox{TiO}_{x}$

(2012) Seungjae Jung et al.   IEEE ELECTRON DEVICE LETTERS

A Self-Rectifying $\hbox{AlO}_{y}$ Bipolar RRAM With Sub-50-$\mu\hbox{A}$ Set/Reset Current for Cross-Bar Architecture

(2012) X. A. Tran et al.   IEEE ELECTRON DEVICE LETTERS

Highly Uniform, Self-Compliance, and Forming-Free ALD $\hbox{HfO}_{2}$ -Based RRAM With Ge Doping

(2012) Zhongrui Wang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistive-switching behavior in Ti/Si3N4/Ti memory structures for ReRAM applications

(2012) Hee-Dong Kim et al.   MICROELECTRONIC ENGINEERING

Failure and reliability analysis of STT-MRAM

(2012) W.S. Zhao et al.   MICROELECTRONICS RELIABILITY

Electrically tailored resistance switching in silicon oxide

(2012) Adnan Mehonic et al.   NANOTECHNOLOGY

Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach

(2011) Haowei Zhang et al.   APPLIED PHYSICS LETTERS

Highly Uniform Switching of Tantalum Embedded Amorphous Oxide Using Self-Compliance Bipolar Resistive Switching

(2011) Chang Bum Lee et al.   IEEE ELECTRON DEVICE LETTERS

Linear Scaling of Reset Current Down to 22-nm Node for a Novel $\hbox{Cu}_{x}\hbox{Si}_{y}\hbox{O}$ RRAM

(2011) L. M. Yang et al.   IEEE ELECTRON DEVICE LETTERS

Accurate analysis of parasitic current overshoot during forming operation in RRAMs

(2011) S. Tirano et al.   MICROELECTRONIC ENGINEERING

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Thermochemical resistive switching: materials, mechanisms, and scaling projections

(2011) Daniele Ielmini et al.   PHASE TRANSITIONS

In Situ Observation of Compliance-Current Overshoot and Its Effect on Resistive Switching

(2010) H.J. Wan et al.   IEEE ELECTRON DEVICE LETTERS

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Phase Change Materials and Their Application to Nonvolatile Memories

(2009) Simone Raoux et al.   CHEMICAL REVIEWS

Electronic structure of memory traps in silicon nitride

(2009) V.A. Gritsenko et al.   MICROELECTRONIC ENGINEERING

Future challenges of flash memory technologies

(2008) Chih-Yuan Lu et al.   MICROELECTRONIC ENGINEERING