Understanding rectifying and nonlinear bipolar resistive switching characteristics in Ni/SiNx/p-Si memory devices

Nano-cone resistive memory for ultralow power operation

(2017) Sungjun Kim et al.   NANOTECHNOLOGY

Dynamic conductance characteristics in HfOx-based resistive random access memory

(2017) Ying-Chen Chen et al.   RSC Advances

Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2–x Structure with a Sub-μm2 Cell Area

(2016) Jung Ho Yoon et al.   ACS Applied Materials & Interfaces

Study of self-compliance behaviors and internal filament characteristics in intrinsic SiOx-based resistive switching memory

(2016) Yao-Feng Chang et al.   APPLIED PHYSICS LETTERS

Memristor and selector devices fabricated from HfO2−xNx

(2016) B. J. Murdoch et al.   APPLIED PHYSICS LETTERS

Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM)

(2016) Stefano Ambrogio et al.   IEEE ELECTRON DEVICE LETTERS

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

(2016) Qing Luo et al.   Nanoscale

Modulation of nonlinear resistive switching behavior of a TaOx-based resistive device through interface engineering

(2016) Zongwei Wang et al.   NANOTECHNOLOGY

Proton exchange reactions in SiOx-based resistive switching memory: Review and insights from impedance spectroscopy

(2016) Yao-Feng Chang et al.   PROGRESS IN SOLID STATE CHEMISTRY

Roles of oxygen and nitrogen in control of nonlinear resistive behaviors via filamentary and homogeneous switching in an oxynitride thin film memristor

(2016) Yu-Chuan Shih et al.   RSC Advances

Ru doping enhanced resistive switching behavior in InGaZnO thin films

(2016) Qin Li et al.   RSC Advances

Fully Si compatible SiN resistive switching memory with large self-rectification ratio

(2016) Sungjun Kim et al.   AIP Advances

Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide

(2016) Yao-Feng Chang et al.   Scientific Reports

Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory

(2015) Fei Zhou et al.   APPLIED PHYSICS LETTERS

Resistance controllability and variability improvement in a TaOx-based resistive memory for multilevel storage application

(2015) A. Prakash et al.   APPLIED PHYSICS LETTERS

Resistive Switching Characteristics of WO3/ZrO2 Structure With Forming-Free, Self-Compliance, and Submicroampere Current Operation

(2015) Tsung-Ling Tsai et al.   IEEE ELECTRON DEVICE LETTERS

Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application

(2015) Shuang Gao et al.   Nanoscale

a-SiNx:H-based ultra-low power resistive random access memory with tunable Si dangling bond conduction paths

(2015) Xiaofan Jiang et al.   Scientific Reports

Physical and chemical mechanisms in oxide-based resistance random access memory

(2015) Kuan-Chang Chang et al.   Nanoscale Research Letters

Tuning Resistive Switching Characteristics of Tantalum Oxide Memristors through Si Doping

(2014) Sungho Kim et al.   ACS Nano

Discussion on device structures and hermetic encapsulation for SiOx random access memory operation in air

(2014) Fei Zhou et al.   APPLIED PHYSICS LETTERS

High-Performance Metal-Insulator-Metal Tunnel Diode Selectors

(2014) Bogdan Govoreanu et al.   IEEE ELECTRON DEVICE LETTERS

On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime

(2014) L. Goux et al.   JOURNAL OF APPLIED PHYSICS

Intrinsic SiOx-based unipolar resistive switching memory. I. Oxide stoichiometry effects on reversible switching and program window optimization

(2014) Yao-Feng Chang et al.   JOURNAL OF APPLIED PHYSICS

Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing

(2014) Yao-Feng Chang et al.   JOURNAL OF APPLIED PHYSICS

Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations

(2014) L. Zhao et al.   Nanoscale

HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

(2013) Shimeng Yu et al.   ACS Nano

Investigation of edge- and bulk-related resistive switching behaviors and backward-scan effects in SiOx-based resistive switching memory

(2013) Yao-Feng Chang et al.   APPLIED PHYSICS LETTERS

Quantum-size effects in hafnium-oxide resistive switching

(2013) Shibing Long et al.   APPLIED PHYSICS LETTERS

Oxygen-induced bi-modal failure phenomenon in SiOx-based resistive switching memory

(2013) Yao-Feng Chang et al.   APPLIED PHYSICS LETTERS

Three-Dimensional NAND Flash Memory Based on Single-Crystalline Channel Stacked Array

(2013) Yoon Kim et al.   IEEE ELECTRON DEVICE LETTERS

Bipolar Resistive-Switching Phenomena and Resistive-Switching Mechanisms Observed in Zirconium Nitride-Based Resistive-Switching Memory Cells

(2013) Hee-Dong Kim et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Integrated One Diode–One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography

(2013) Li Ji et al.   NANO LETTERS

Evolution of the shape of the conducting channel in complementary resistive switching transition metal oxides

(2013) Kyung Jean Yoon et al.   Nanoscale

Improved resistive switching phenomena observed in SiNx-based resistive switching memory through oxygen doping process

(2013) Ju Hyun Park et al.   Physica Status Solidi-Rapid Research Letters

Quantum Conductance in Silicon Oxide Resistive Memory Devices

(2013) A. Mehonic et al.   Scientific Reports

High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector–One Resistor Arrays

(2012) Wootae Lee et al.   ACS Nano

Study of polarity effect in SiOx-based resistive switching memory

(2012) Yao-Feng Chang et al.   APPLIED PHYSICS LETTERS

Tristate Operation in Resistive Switching of $ \hbox{SiO}_{2}$ Thin Films

(2012) Yen-Ting Chen et al.   IEEE ELECTRON DEVICE LETTERS

Understanding the resistive switching characteristics and mechanism in active SiOx-based resistive switching memory

(2012) Yao-Feng Chang et al.   JOURNAL OF APPLIED PHYSICS

Bipolar resistive switching with self-rectifying effects in Al/ZnO/Si structure

(2012) C. Chen et al.   JOURNAL OF APPLIED PHYSICS

Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach

(2011) Haowei Zhang et al.   APPLIED PHYSICS LETTERS

Transparent Resistive Switching Memory Using ITO/AlN/ITO Capacitors

(2011) Hee-Dong Kim et al.   IEEE ELECTRON DEVICE LETTERS

Low-Power and Highly Reliable Multilevel Operation in $ \hbox{ZrO}_{2}$ 1T1R RRAM

(2011) Ming-Chi Wu et al.   IEEE ELECTRON DEVICE LETTERS

Accurate analysis of parasitic current overshoot during forming operation in RRAMs

(2011) S. Tirano et al.   MICROELECTRONIC ENGINEERING

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

In Situ Observation of Compliance-Current Overshoot and Its Effect on Resistive Switching

(2010) H.J. Wan et al.   IEEE ELECTRON DEVICE LETTERS

Realization of forming-free ZnO-based resistive switching memory by controlling film thickness

(2010) Qinan Mao et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS